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19 条记录 (耗时 0.018 秒)

    REFLECTIVE MASK AND METHOD OF MAKING SAME
    3.
    发明申请
    REFLECTIVE MASK AND METHOD OF MAKING SAME 有权
    反射掩模及其制作方法

    公开(公告)号：US20150104736A1

    公开(公告)日：2015-04-16

    申请号：US14531639

    申请日：2014-11-03

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Pei-Cheng HSU ,  Chih-Tsung SHIH ,  Chia-Jen CHEN ,  Tsiao-Chen WU ,  Shinn-Sheng YU ,  Hsin-Chang LEE ,  Anthony YEN

    IPC分类号： G03F1/24 ,  G03F1/48 ,  H01L21/033

    CPC分类号： G03F1/24 ,  G03F1/48 ,  H01L21/0337

    摘要： A reflective mask is described. The mask includes a low thermal expansion material (LTEM) substrate, a conductive layer deposited on a first surface of the LTEM substrate, a stack of reflective multilayers (ML) deposited on a second surface of the LTEM substrate, a capping layer deposited on the stack of reflective ML, a first absorption layer deposited on the first capping layer, a main pattern, and a border ditch. The border ditch reaches to the capping layer, a second absorption layer deposited inside the border ditch, and where the second absorption layer contacts the capping layer. In some instances, the border ditch crosses the capping layer and partially enters the reflective multilayer.

    摘要翻译： 描述了一种反光罩。 掩模包括低热膨胀材料（LTEM）衬底，沉积在LTEM衬底的第一表面上的导电层，沉积在LTEM衬底的第二表面上的反射多层堆叠（ML），沉积在 堆叠的反射ML，沉积在第一盖层上的第一吸收层，主图案和边界沟。 边界沟到达覆盖层，沉积在边界沟内的第二吸收层，第二吸收层与覆盖层接触。 在一些情况下，边界沟穿过覆盖层并部分地进入反射层。

    METHOD OF MANUFACTURING EXTREME ULTRAVIOLET MASK WITH REDUCED WAFER NEIGHBORING EFFECT
    5.
    发明申请
    METHOD OF MANUFACTURING EXTREME ULTRAVIOLET MASK WITH REDUCED WAFER NEIGHBORING EFFECT 有权

    公开(公告)号：US20210247687A1

    公开(公告)日：2021-08-12

    申请号：US17244662

    申请日：2021-04-29

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Wen-Chang HSUEH ,  Huan-Ling LEE ,  Chia-Jen CHEN ,  Hsin-Chang LEE

    IPC分类号： G03F1/22 ,  G03F1/52 ,  G03F1/48 ,  G03F1/58 ,  G03F1/24

    摘要： A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.

    Assist Feature for a Photolithographic Process
    6.
    发明申请
    Assist Feature for a Photolithographic Process 有权
    光刻工艺的辅助功能

    公开(公告)号：US20160011501A1

    公开(公告)日：2016-01-14

    申请号：US14327834

    申请日：2014-07-10

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Tao-Min HUANG ,  Chia-Jen CHEN ,  Hsin-Chang LEE ,  Chih-Tsung SHIH ,  Shinn-Sheng YU ,  Jeng-Horng CHEN ,  Anthony YEN

    IPC分类号： G03F1/24 ,  G03F1/38

    CPC分类号： G03F7/2004 ,  G03F1/24 ,  G03F1/36 ,  G03F1/38 ,  G03F7/20 ,  G03F7/7055

    摘要： A photomask having a partial-thickness assist feature and a technique for manufacturing the photomask are disclosed. In an exemplary embodiment, the photomask includes a mask substrate, a reflective structure disposed on the mask substrate, and an absorptive layer formed on the reflective structure. A printing feature region and an assist feature region are defined on the mask. The absorptive layer has a first thickness in the printing feature region and a second thickness in the assist feature region that is different from the first thickness. In some such embodiments, the second thickness is configured such that radiation reflected by the assist feature region does not exceed an exposure threshold of a photoresist of a target.

    摘要翻译： 公开了具有局部厚度辅助特征的光掩模和用于制造光掩模的技术。 在示例性实施例中，光掩模包括掩模基板，设置在掩模基板上的反射结构和形成在反射结构上的吸收层。 在掩模上定义打印特征区域和辅助特征区域。 吸收层在印刷特征区域中具有第一厚度，在辅助特征区域中具有与第一厚度不同的第二厚度。 在一些这样的实施例中，第二厚度被配置为使得由辅助特征区域反射的辐射不超过目标的光刻胶的曝光阈值。

    PHOTOMASK INCLUDING FIDUCIAL MARK AND METHOD OF MAKING SEMICONDUCTOR DEVICE USING THE PHOTOMASK
    9.
    发明申请
    PHOTOMASK INCLUDING FIDUCIAL MARK AND METHOD OF MAKING SEMICONDUCTOR DEVICE USING THE PHOTOMASK 有权

    公开(公告)号：US20210286255A1

    公开(公告)日：2021-09-16

    申请号：US17335944

    申请日：2021-06-01

    申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    发明人： Hsin-Chang LEE ,  Ping-Hsun LIN ,  Chih-Cheng LIN ,  Chia-Jen CHEN

    IPC分类号： G03F1/44 ,  G03F1/84 ,  G03F1/42

    摘要： A method of making a semiconductor device includes forming at least one fiducial mark on a photomask outside of a pattern region of the photomask, and the at least one fiducial mark includes identifying information for the photomask. The method includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern. The method includes transferring the pattern from the photomask to a wafer.