公开(公告)号：US20160343846A1

公开(公告)日：2016-11-24

申请号：US15225298

申请日：2016-08-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chao-Ching Cheng ,  Chih-Hsin Ko ,  Hsingien Wann

IPC分类号： H01L29/78 ,  H01L29/04 ,  H01L29/20 ,  H01L21/308 ,  H01L29/51 ,  H01L29/66 ,  H01L29/06 ,  H01L29/49 ,  H01L21/28 ,  H01L29/45

摘要： A device with improved device performance, and method of manufacturing the same, are disclosed. An exemplary device includes a group III-V compound semiconductor substrate that includes a surface having a (110) crystallographic orientation, and a gate stack disposed over the group III-V compound semiconductor substrate. The gate stack includes a high-k dielectric layer disposed on the surface having the (110) crystallographic orientation, and a gate electrode disposed over the high-k dielectric layer.

摘要翻译： 公开了一种具有改进的器件性能的器件及其制造方法。 示例性器件包括III-V族化合物半导体衬底，其包括具有（110）结晶取向的表面和设置在III-V族化合物半导体衬底上的栅叠层。 栅极堆叠包括设置在具有（110）晶体取向的表面上的高k电介质层，以及设置在高k电介质层上的栅电极。

公开(公告)号：US20200075756A1

公开(公告)日：2020-03-05

申请号：US16678045

申请日：2019-11-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chao-Ching Cheng ,  Chih-Hsin Ko ,  Hsingien Wann

IPC分类号： H01L29/78 ,  H01L29/49 ,  H01L29/06 ,  H01L21/308 ,  H01L21/28 ,  H01L29/20 ,  H01L29/04 ,  H01L29/66 ,  H01L29/51 ,  H01L29/45

摘要： A device with improved device performance, and method of manufacturing the same, are disclosed. An exemplary device includes a group III-V compound semiconductor substrate that includes a surface having a (110) crystallographic orientation, and a gate stack disposed over the group III-V compound semiconductor substrate. The gate stack includes a high-k dielectric layer disposed on the surface having the (110) crystallographic orientation, and a gate electrode disposed over the high-k dielectric layer.