公开(公告)号：US20230253500A1

公开(公告)日：2023-08-10

申请号：US18135650

申请日：2023-04-17

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. ,  NATIONAL TAIWAN UNIVERSITY

发明人： Huang-Siang LAN ,  CheeWee Liu ,  Chi-Wen Liu ,  Shih-Hsien Huang ,  I-Hsieh WONG ,  Hung-Yu YEH ,  Chung-En TSAI

IPC分类号： H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/165 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/02 ,  H01L29/66

CPC分类号： H01L29/7849 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/165 ,  H01L27/0924 ,  H01L21/823821 ,  H01L21/823807 ,  H01L21/823864 ,  H01L21/02535 ,  H01L21/823828 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/66795 ,  H01L29/7848

摘要： A semiconductor device includes a fin extending along a first direction over a substrate, and a gate structure extending in a second direction overlying the fin. The gate structure includes a gate dielectric layer overlying the fin, a gate electrode overlying the gate dielectric layer, and insulating gate sidewalls on opposing lateral surfaces of the gate electrode extending along the second direction. A source/drain region is formed in the fin in a region adjacent the gate electrode structure, and a stressor layer is between the source/drain region and the semiconductor substrate. The stressor layer includes GeSn or SiGeSn containing 1019 atoms cm−3 or less of a dopant, and a portion of the fin under the gate structure is a channel region.

公开(公告)号：US20230063984A1

公开(公告)日：2023-03-02

申请号：US17446269

申请日：2021-08-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Feng-Ching CHU ,  I-Hsieh WONG ,  Wei-Yang LEE ,  Chia-Pin LIN

IPC分类号： H01L27/12 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66

摘要： Methods and associated devices including the fabrication of a semiconductor structure that provides a silicon-on-insulator substrate. The semiconductor structure may be formed by providing a base substrate, forming a sacrificial layer over the base structure, and forming a semiconductor layer over the sacrificial layer. The sacrificial layer is removed to form a void that is filled with oxide. The semiconductor structure includes a dielectric support feature extending through the semiconductor and oxide layers and/or a portion of the oxide layer extends to the surface of the semiconductor layer.