公开(公告)号：US20240203885A1

公开(公告)日：2024-06-20

申请号：US18590215

申请日：2024-02-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih-Hsuan LIN ,  Hsi Chung CHEN ,  Ji-Ling WU ,  Chih-Teng LIAO

IPC: H01L23/535 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L23/535 ,  H01L21/32136 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76825 ,  H01L21/76895 ,  H01L23/5283 ,  H01L23/53257

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.