公开(公告)号：US12132079B2

公开(公告)日：2024-10-29

申请号：US18392379

申请日：2023-12-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Kan Hu ,  Han-De Chen ,  Ku-Feng Yang ,  Chen-Fong Tsai ,  Chi On Chui ,  Szuya Liao

IPC分类号： H01L29/06 ,  H01L21/8238 ,  H01L25/07 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0653 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L25/074 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

摘要： Bonding and isolation techniques for stacked device structures are disclosed herein. An exemplary method includes forming a first insulation layer on a first device component, forming a second insulation layer on a second device component, and bonding the first insulation layer and the second insulation layer. The bonding provides a stacked structure that includes the first device component over the second device component, and an isolation structure (formed by the first insulation layer bonded to the second insulation layer) therebetween. The isolation structure includes a first portion having a first composition and a second portion having a second composition different than the first composition. The method further includes processing the stacked structure to form a first device disposed over a second device, where the isolation structure separates the first device and the second device. The first insulation layer and the second insulation layer may include the same or different materials.

公开(公告)号：US20240363421A1

公开(公告)日：2024-10-31

申请号：US18766104

申请日：2024-07-08

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Han-Yu LIN ,  Szu-Hua Chen ,  Kuan-Kan Hu ,  Kenichi Sano ,  Po-Cheng Wang ,  Wei-Yen Woon ,  Pinyen Lin ,  Che Chi Shih

IPC分类号： H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/823431 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/6675 ,  H01L29/78618 ,  H01L29/78672 ,  H01L29/7869 ,  H01L29/78696

摘要： The present disclosure describes a semiconductor device with a rare earth metal oxide layer and a method for forming the same. The method includes forming fin structures on a substrate and forming superlattice structures on the fin structures, where each of the superlattice structures includes a first-type nanostructured layer and a second-type nanostructured layer. The method further includes forming an isolation layer between the superlattice structures, implanting a rare earth metal into a top portion of the isolation layer to form a rare earth metal oxide layer, and forming a polysilicon structure over the superlattice structures. The method further includes etching portions of the superlattice structures adjacent to the polysilicon structure to form a source/drain (S/D) opening and forming an S/D region in the S/D opening.

公开(公告)号：US20240282814A1

公开(公告)日：2024-08-22

申请号：US18392379

申请日：2023-12-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Kan Hu ,  Han-De Chen ,  Ku-Feng Yang ,  Chen-Fong Tsai ,  Chi On Chui ,  Szuya Liao

IPC分类号： H01L29/06 ,  H01L21/8238 ,  H01L25/07 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0653 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L25/074 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

摘要： Bonding and isolation techniques for stacked device structures are disclosed herein. An exemplary method includes forming a first insulation layer on a first device component, forming a second insulation layer on a second device component, and bonding the first insulation layer and the second insulation layer. The bonding provides a stacked structure that includes the first device component over the second device component, and an isolation structure (formed by the first insulation layer bonded to the second insulation layer) therebetween. The isolation structure includes a first portion having a first composition and a second portion having a second composition different than the first composition. The method further includes processing the stacked structure to form a first device disposed over a second device, where the isolation structure separates the first device and the second device. The first insulation layer and the second insulation layer may include the same or different materials.

公开(公告)号：US20240282815A1

公开(公告)日：2024-08-22

申请号：US18519737

申请日：2023-11-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuan-Kan Hu ,  Han-De Chen ,  Ku-Feng Yang ,  Chen-Fong Tsai ,  Chi On Chui ,  Szuya Liao

IPC分类号： H01L29/06 ,  H01L21/8238 ,  H01L25/07 ,  H01L27/092 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/0653 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L25/074 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

摘要： Bonding and isolation techniques for stacked device structures are disclosed herein. An exemplary method includes forming a first insulation layer on a first device component, forming a second insulation layer on a second device component, and bonding the first insulation layer and the second insulation layer. The bonding provides a stacked structure that includes the first device component over the second device component, and an isolation structure (formed by the first insulation layer bonded to the second insulation layer) therebetween. The isolation structure includes a first portion having a first composition and a second portion having a second composition different than the first composition. The method further includes processing the stacked structure to form a first device disposed over a second device, where the isolation structure separates the first device and the second device. The first insulation layer and the second insulation layer may include the same or different materials.

公开(公告)号：US20240321883A1

公开(公告)日：2024-09-26

申请号：US18360038

申请日：2023-07-27

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Han-De Chen ,  Chen-Fong Tsai ,  Kuan-Kan Hu ,  Ku-Feng Yang ,  Chi On Chui

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/775

CPC分类号： H01L27/092 ,  H01L21/823807 ,  H01L29/0673 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/775

摘要： Semiconductor structures and processes of forming the same are provided. A semiconductor structure according to the present disclosure includes a first bottom source/drain feature and a second bottom source/drain feature disposed over a substrate, a plurality of bottom channel members extending between and in contact with the first bottom source/drain feature and the second bottom source/drain feature, a first bonding layer over the plurality of bottom channel members, a second bonding layer disposed directly on the first bonding layer, a first top source/drain feature disposed directly over the first bottom source/drain feature, a second top source/drain feature disposed directly over the second bottom source/drain feature, and a plurality of top channel members disposed over the second bonding layer and extending between and in contact with the first top source/drain feature and the second top source/drain feature.