公开(公告)号：US20220415737A1

公开(公告)日：2022-12-29

申请号：US17358001

申请日：2021-06-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Cheng-Chieh Wu ,  Ting Hao Kuo ,  Kuo-Lung Pan ,  Po-Yuan Teng ,  Yu-Chia Lai ,  Shu-Rong Chun ,  Mao-Yen Chang ,  Wei-Kang Hsieh ,  Pavithra Sriram ,  Hao-Yi Tsai ,  Po-Han Wang ,  Yu-Hsiang Hu ,  Hung-Jui Kuo

IPC分类号： H01L23/31 ,  H01L23/538 ,  H01L23/29 ,  H01L25/065 ,  H01L23/00 ,  H01L21/56 ,  H01L21/48

摘要： A semiconductor device includes semiconductor dies and a redistribution structure. The semiconductor dies are encapsulated in an encapsulant. The redistribution structure extends on the encapsulant and electrically connects the semiconductor dies. The redistribution structure includes dielectric layers and redistribution conductive layers alternately stacked. An outermost dielectric layer of the dielectric layers further away from the semiconductor dies is made of a first material. A first dielectric layer of the dielectric layers on which the outermost dielectric layer extends is made of a second material different from the first material. The first material includes at least one material selected from the group consisting of an epoxy resin, a phenolic resin, a polybenzooxazole, and a polyimide having a curing temperature lower than 250° C.