公开(公告)号：US20240337918A1

公开(公告)日：2024-10-10

申请号：US18749170

申请日：2024-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20230205072A1

公开(公告)日：2023-06-29

申请号：US18114848

申请日：2023-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.