公开(公告)号：US20230402283A1

公开(公告)日：2023-12-14

申请号：US17836820

申请日：2022-06-09

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ping-Hsun LIN ,  Hung-Yi TSAI ,  Hao-Ping CHENG ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: H01L21/033 ,  H01L21/66 ,  H01L21/3213

CPC classification number: H01L21/0337 ,  H01L22/20 ,  H01L21/32135 ,  H01L21/32139

Abstract: A method for fabricating a mask is provided. The method includes depositing a target layer over a dielectric substrate; forming a patterned photoresist layer over the target layer according to an integrated circuit (IC) layout; determining a plurality of dry etch control parameters according a material of the target layer and an information of the IC layout; and using a dry etcher set up with the dry etch control parameters, etching the target layer through the patterned photoresist layer.

公开(公告)号：US20240337918A1

公开(公告)日：2024-10-10

申请号：US18749170

申请日：2024-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20230205072A1

公开(公告)日：2023-06-29

申请号：US18114848

申请日：2023-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20240085781A1

公开(公告)日：2024-03-14

申请号：US18517828

申请日：2023-11-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Hao-Ping CHENG ,  Ta-Cheng LIEN

IPC: G03F1/82 ,  G03F1/64

CPC classification number: G03F1/82 ,  G03F1/64

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.

公开(公告)号：US20220334468A1

公开(公告)日：2022-10-20

申请号：US17853624

申请日：2022-06-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hsin-Chang LEE ,  Pei-Cheng HSU ,  Hao-Ping CHENG ,  Ta-Cheng LIEN

IPC: G03F1/82 ,  G03F1/64

Abstract: In a method of cleaning a photo mask, the photo mask is placed on a support such that a pattered surface faces down, and an adhesive sheet is applied to edges of a backside surface of the photo mask.