公开(公告)号：US20230032950A1

公开(公告)日：2023-02-02

申请号：US17390298

申请日：2021-07-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Che HSIEH ,  Chi-Lun LU ,  Ping-Hsun LIN ,  Fu-Sheng CHU ,  Ta-Cheng LIEN ,  Hsin-Chang LEE

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/40 ,  G03F7/16

Abstract: A reflective mask includes a substrate, a lower reflective multilayer disposed over the substrate, an intermediate layer disposed over the lower reflective multilayer, an upper reflective multilayer disposed over the intermediate layer, a capping layer disposed over the upper reflective multilayer, and an absorber layer disposed in a trench formed in the upper reflective layers and over the intermediate layer. The intermediate layer includes a metal other than Cr, Ru, Si, Si compound and carbon.

公开(公告)号：US20230161240A1

公开(公告)日：2023-05-25

申请号：US17736772

申请日：2022-05-04

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Che HSIEH ,  Chia-Ching CHU ,  Ya-Lun CHEN ,  Yu-Chung SU ,  Tzu-Yi WANG ,  Yahru CHENG ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ching-Yu CHANG

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: In a method of manufacturing a reflective mask, an adhesion layer is formed over a mask blank. The mask blank includes a substrate, a reflective multilayer disposed over the substrate, a capping layer disposed over the reflective multilayer, an absorber layer disposed over the capping layer, and a hard mask layer disposed over the absorber layer. A photoresist pattern is formed over the adhesion layer, the adhesion layer is patterned, the hard mask layer is patterned, and the absorber layer is patterned using the patterned hard mask layer as an etching mask. The photoresist layer has a higher adhesiveness to the adhesion layer than to the hard mask layer.

公开(公告)号：US20240337918A1

公开(公告)日：2024-10-10

申请号：US18749170

申请日：2024-06-20

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.

公开(公告)号：US20240069431A1

公开(公告)日：2024-02-29

申请号：US18110838

申请日：2023-02-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Wei-Che HSIEH ,  Chien-Cheng Chen ,  Ping-Hsun Lin ,  Ta-Cheng Lien ,  Hsin-Chang Lee

IPC: G03F1/32

CPC classification number: G03F1/32

Abstract: In a method of manufacturing an attenuated phase shift mask, a photo resist pattern is formed over a mask blank. The mask blank includes a transparent substrate, an etch stop layer on the transparent substrate, a phase shift material layer on the etch stop layer, a hard mask layer on the phase shift material layer and an intermediate layer on the hard mask layer. The intermediate layer is patterned by using the photo resist pattern as an etching mask, the hard mask layer is patterned by using the patterned intermediate layer as an etching mask, and the phase shift material layer is patterned by using the patterned hard mask layer as an etching mask. The intermediate layer includes at least one of a transition metal, a transition metal alloy, or a silicon containing material, and the hard mask layer is made of a different material than the intermediate layer.

公开(公告)号：US20230205072A1

公开(公告)日：2023-06-29

申请号：US18114848

申请日：2023-02-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Hung-Yi TSAI ,  Wei-Che HSIEH ,  Ta-Cheng LIEN ,  Hsin-Chang LEE ,  Ping-Hsun LIN ,  Hao-Ping CHENG ,  Ming-Wei CHEN ,  Szu-Ping TSAI

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.