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公开(公告)号：US20210327748A1
公开(公告)日：2021-10-21
申请号：US17360784
申请日：2021-06-28
Inventor： Tsai-Ming HUANG , Wei-Chieh HUANG , Hsun-Chung KUANG , Yen-Chang CHU , Cheng-Che CHUNG , Chin-Wei LIANG , Ching-Sen KUO , Jieh-Jang CHEN , Feng-Jia SHIU , Sheng-Chau CHEN
IPC: H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/321 , H01L23/544 , H01L23/522
Abstract: In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.
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公开(公告)号：US20240404877A1
公开(公告)日：2024-12-05
申请号：US18784282
申请日：2024-07-25
Inventor： Tsai-Ming HUANG , Wei-Chieh HUANG , Hsun-Chung KUANG , Yen-Chang CHU , Cheng-Che CHUNG , Chin-Wei LIANG , Ching-Sen KUO , Jieh-Jang CHEN , Feng-Jia SHIU , Sheng-Chau CHEN
IPC: H01L21/768 , H01L21/02 , H01L21/3105 , H01L21/321 , H01L23/522 , H01L23/544
Abstract: In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.
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