公开(公告)号：US20240282761A1

公开(公告)日：2024-08-22

申请号：US18112853

申请日：2023-02-22

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Zheng Yong Liang ,  Wei-Ting Yeh ,  Jyh-Cherng Sheu ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L25/18 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522

CPC分类号： H01L25/18 ,  H01L21/02016 ,  H01L21/02186 ,  H01L21/0231 ,  H01L21/02334 ,  H01L21/76822 ,  H01L23/5226

摘要： A carrier structure and methods of forming and using the same are described. In some embodiments, the method includes forming one or more devices over a substrate, forming a first interconnect structure over the one or more devices, and bonding the first interconnect structure to a carrier structure. The carrier structure includes a semiconductor substrate, a release layer, and a first dielectric layer, and the release layer includes a metal nitride. The method further includes flipping over the one or more devices so the carrier structure is located at a bottom, performing backside processes, flipping over the one or more devices so the carrier structure is located at a top, and exposing the carrier structure to IR lights. Portions of the release layer are separated from the first dielectric layer.

公开(公告)号：US20230178593A1

公开(公告)日：2023-06-08

申请号：US17833273

申请日：2022-06-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Ting Yeh ,  Hung-Yu Yen ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L29/0649 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696 ,  H01L21/0259 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02356 ,  H01L21/02362 ,  H01L21/762 ,  H01L29/66545 ,  H01L29/66742

摘要： A semiconductor device structure and a formation method are provided. The method includes forming a sacrificial base layer over a substrate and forming a semiconductor stack over the sacrificial base layer. The semiconductor stack has multiple sacrificial layers and multiple semiconductor layers laid out alternately. The method also includes forming a gate stack to partially cover the sacrificial base layer, the semiconductor layers, and the sacrificial layers. The method further includes removing the sacrificial base layer to form a recess between the substrate and the semiconductor stack. In addition, the method includes forming a metal-containing dielectric structure to partially or completely fill the recess. The metal-containing dielectric structure has multiple sub-layers.

公开(公告)号：US20240355805A1

公开(公告)日：2024-10-24

申请号：US18304350

申请日：2023-04-21

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Wei-Ting Yeh ,  Zheng-Yong Liang ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L25/00 ,  H01L21/683 ,  H01L23/00 ,  H01L25/065

CPC分类号： H01L25/50 ,  H01L21/6835 ,  H01L24/08 ,  H01L24/83 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/08145 ,  H01L2224/80896 ,  H01L2224/83862

摘要： Provided is a method of forming a semiconductor structure including: bonding a device wafer onto a carrier wafer; forming a support structure between an edge of the device wafer and an edge of the carrier wafer, wherein the support structure surrounds a device layer of the device wafer along a closed path; removing a substrate and a portion of a bonding dielectric layer of the device wafer from a backside of the device wafer to expose the support structures while the support structure is in place; and removing the support structure through an acid etchant.

公开(公告)号：US20240355733A1

公开(公告)日：2024-10-24

申请号：US18303588

申请日：2023-04-20

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Zheng-Yong Liang ,  Wei-Ting Yeh ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L23/528 ,  H01L21/768 ,  H01L23/373 ,  H01L23/522

CPC分类号： H01L23/5283 ,  H01L21/76898 ,  H01L23/3738 ,  H01L23/5226

摘要： A semiconductor structure and a manufacturing method thereof are provided. A semiconductor structure includes a first nitride-containing layer on a side of a carrier substrate, first semiconductor devices thermally coupled to the first nitride-containing layer, a first interconnect structure physically and electrically coupled to first sides of the first semiconductor devices, and a first metal-containing dielectric layer bonding the first nitride-containing layer to the first interconnect structure. A thermal conductivity of the first nitride-containing layer is greater than a thermal conductivity of the first metal-containing dielectric layer.