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公开(公告)号:US20190013406A1
公开(公告)日:2019-01-10
申请号:US16040053
申请日:2018-07-19
申请人: Intel Corporation
发明人: Sameer Pradhan , Jeanne Luce
IPC分类号: H01L29/78 , H01L29/66 , H01L21/8234 , H01L21/02 , H01L21/768
CPC分类号: H01L29/7851 , H01L21/02282 , H01L21/02304 , H01L21/02323 , H01L21/02337 , H01L21/0234 , H01L21/02356 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L21/823431 , H01L29/66545 , H01L29/66575 , H01L29/66795 , H01L29/7843 , H01L29/7848 , H01L29/785
摘要: The present description relates the formation of a first level interlayer dielectric material layer within a non-planar transistor, which may be formed by a spin-on coating technique followed by oxidation and annealing. The first level interlayer dielectric material layer may be substantially void free and may exert a tensile strain on the source/drain regions of the non-planar transistor.
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公开(公告)号:US20180308690A1
公开(公告)日:2018-10-25
申请号:US15954521
申请日:2018-04-16
发明人: Bart J. van Schravendijk , Wei Tang
IPC分类号: H01L21/02 , H01L21/768 , H01L21/324 , H01L21/3105 , C23C16/04 , C23C16/56
CPC分类号: H01L21/02356 , C23C16/045 , C23C16/56 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02318 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/324 , H01L21/76825 , H01L21/76828 , H01L21/76837
摘要: Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a substrate comprising a material to be densified, and annealing the substrate to transfer stress from the removable film to the material and thereby densify the material. Some methods involve depositing a tensile capping layer on the material to be densified on a substrate and annealing the substrate at a temperature greater than about 450° C. Some methods include clamping the substrate including the material to be densified to a shaped pedestal using an electrostatic chuck to apply compressive stress to the material to be densified.
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公开(公告)号:US20180247997A1
公开(公告)日:2018-08-30
申请号:US15901498
申请日:2018-02-21
申请人: BlackBerry Limited
CPC分类号: H01L28/40 , H01L21/02183 , H01L21/02186 , H01L21/02197 , H01L21/02266 , H01L21/0228 , H01L21/02282 , H01L21/02304 , H01L21/02356 , H01L28/56 , H01L28/65 , H01L28/75
摘要: A system that incorporates teachings of the subject disclosure may include, for example, a thin film capacitor a silicon substrate having a silicon dioxide layer; an adhesion layer on the silicon dioxide layer, wherein the adhesion layer is a polar dielectric; a first electrode layer on the adhesion layer; a dielectric layer on the first electrode layer; and a second electrode layer on the dielectric layer. Other embodiments are disclosed.
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公开(公告)号:US10056488B2
公开(公告)日:2018-08-21
申请号:US15400958
申请日:2017-01-06
申请人: Intel Corporation
发明人: Sameer Pradhan , Jeanne Luce
CPC分类号: H01L29/7851 , H01L21/02282 , H01L21/02304 , H01L21/02323 , H01L21/02337 , H01L21/0234 , H01L21/02356 , H01L21/76826 , H01L21/76829 , H01L21/76834 , H01L21/76897 , H01L21/823431 , H01L29/66545 , H01L29/66575 , H01L29/66795 , H01L29/7843 , H01L29/7848 , H01L29/785
摘要: The present description relates the formation of a first level interlayer dielectric material layer within a non-planar transistor, which may be formed by a spin-on coating technique followed by oxidation and annealing. The first level interlayer dielectric material layer may be substantially void free and may exert a tensile strain on the source/drain regions of the non-planar transistor.
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公开(公告)号:US09991345B2
公开(公告)日:2018-06-05
申请号:US15710407
申请日:2017-09-20
发明人: Tomoyuki Suzuki , Junya Nishii
CPC分类号: H01L29/2003 , H01L21/02145 , H01L21/02356 , H01L29/41766 , H01L29/452 , H01L29/513 , H01L29/517 , H01L29/66477 , H01L29/66696 , H01L29/66704 , H01L29/7813
摘要: There is provided a semiconductor device comprising a group III nitride semiconductor layer; a gate insulating film formed on the group III nitride semiconductor layer; and a gate electrode formed on the gate insulating film. The gate insulating film comprises a first film that is placed on the group III nitride semiconductor layer, includes silicon and has a higher crystallization temperature than a crystallization temperature of aluminum oxide; and a second film that is placed on the first film and contains aluminum oxide. The first film has a hydrogen concentration of not lower than 1×1021 atoms/cm3, a nitrogen concentration of not lower than 1×1019 atoms/cm3 and a carbon concentration of not lower than 1×1019 atoms/cm3. This configuration prevents crystallization of aluminum oxide.
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公开(公告)号:US09966283B2
公开(公告)日:2018-05-08
申请号:US13579394
申请日:2010-08-02
申请人: Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
发明人: Mitsuhiro Suzuki , Takeshi Kijima , Yuuji Honda
IPC分类号: H05B3/02 , H01L21/67 , H01L21/02 , H01L21/324
CPC分类号: H01L21/67115 , H01L21/02197 , H01L21/02337 , H01L21/02356 , H01L21/324
摘要: A pressurizing-type lamp annealing device which can easily handle a substrate to be treated having a large surface area. An embodiment of the pressurizing-type lamp annealing device includes: a treatment chamber (25); a holding part (23) disposed in the treatment chamber to hold a substrate to be treated; a gas-introduction mechanism for introducing a pressurized gas into the treatment chamber; a gas-discharge mechanism for discharging the gas in the treatment chamber; a transparent tube (20) disposed in the treatment chamber; and a lamp heater (19) placed in the treatment chamber to irradiate the substrate with a lamp light through the transparent tube.
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公开(公告)号:US09966255B2
公开(公告)日:2018-05-08
申请号:US15698570
申请日:2017-09-07
发明人: Bart J. van Schravendijk , Wei Tang
IPC分类号: H01L21/02 , H01L21/324 , C23C16/56 , C23C16/04 , H01L21/3105 , H01L21/768
CPC分类号: H01L21/02356 , C23C16/045 , C23C16/56 , H01L21/0217 , H01L21/02274 , H01L21/0228 , H01L21/02318 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/324 , H01L21/76825 , H01L21/76828 , H01L21/76837
摘要: Methods of densifying films, cross-linking films, and controlling the stress of films are provided herein. Methods include forming a removable film on a substrate comprising a material to be densified, and annealing the substrate to transfer stress from the removable film to the material and thereby densify the material. Some methods involve depositing a tensile capping layer on the material to be densified on a substrate and annealing the substrate at a temperature greater than about 450° C. Some methods include clamping the substrate including the material to be densified to a shaped pedestal using an electrostatic chuck to apply compressive stress to the material to be densified.
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8.
公开(公告)号:US20170365672A1
公开(公告)日:2017-12-21
申请号:US15539597
申请日:2015-07-16
发明人: Shengkai WANG , Honggang LIU , Bing SUN , Hudong CHANG
CPC分类号: H01L29/408 , H01L21/02178 , H01L21/02192 , H01L21/0228 , H01L21/02301 , H01L21/02356 , H01L21/28264 , H01L21/285 , H01L29/20 , H01L29/42364 , H01L29/513 , H01L29/517
摘要: The present invention discloses a composite gate dielectric layer for a Group III-V substrate and a method for manufacturing the same. The composite gate dielectric layer comprises: an AlxY2-xO3 interface passivation layer formed onthe group III-V substrate; and a high dielectric insulating layer formed on the AlxY2-xO3 interface passivation layer, wherein 1.2≦x≦1.9.The composite gate dielectric layer modifies the AI/Y ratio of the AlxY2-xO3 interface passivation layer, changes the average number of atomic coordination in the AlxY2-xO3 interface passivation layer, and decreases the interface state density and boundary trap density of the Group III-V substrate, increases the mobility of the MOS channel. By cooperation of the AlxY2-xO3 interface passivation layer and high dielectric insulation layer, it reduces leakage current and improvestolerance of the dielectric layer on the voltage, and improvesthe quality of the MOS capacitor of the Group III-V substrate and enhances its reliability.
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公开(公告)号:US09834843B2
公开(公告)日:2017-12-05
申请号:US15165427
申请日:2016-05-26
IPC分类号: C23C18/00 , C23C18/12 , H01B19/04 , H01L21/02 , C04B35/468 , C04B35/493 , C04B35/624 , C04B35/634 , C23C18/20 , H01L21/3105 , H01L49/02
CPC分类号: C23C18/1254 , C04B35/4682 , C04B35/493 , C04B35/624 , C04B35/634 , C04B2235/3213 , C04B2235/3227 , C04B2235/6562 , C23C18/1216 , C23C18/1225 , C23C18/1241 , C23C18/1283 , C23C18/1295 , C23C18/208 , H01B19/04 , H01L21/02118 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/02197 , H01L21/02282 , H01L21/02356 , H01L21/3105 , H01L28/55 , Y10T428/24975
摘要: The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 μm to about 1.0 μm to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 μm to about 20.0 μm and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 μm to about 20.0 μm.
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公开(公告)号:US20170263475A1
公开(公告)日:2017-09-14
申请号:US15500213
申请日:2015-07-31
发明人: Jean-Pierre LOCQUET , Chen-Yi SU
IPC分类号: H01L21/67 , H01L21/02 , H01L21/687 , C23C14/58 , C23C16/56
CPC分类号: H01L21/67109 , C23C14/228 , C23C14/5806 , C23C16/56 , H01L21/02175 , H01L21/02178 , H01L21/02266 , H01L21/02337 , H01L21/02356 , H01L21/02527 , H01L21/02529 , H01L21/02565 , H01L21/02631 , H01L21/02689 , H01L21/68714
摘要: A heating device for heating the surface of a substrate. The heating device comprises a gas source comprising an inert material supply inert under the operating conditions of the heating device, the gas source being adapted for supplying a hot jet of a gas comprising at least elements of said inert material on the substrate. The gas source is adapted for heating the hot jet of the gas to a temperature above 1500° C.
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