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公开(公告)号：US20240147731A1
公开(公告)日：2024-05-02
申请号：US18303131
申请日：2023-04-19
发明人： Yi-Hsuan CHEN , Kuen-Yi CHEN , Yi Ching ONG , Kuo-Ching HUANG
CPC分类号： H10B51/30 , H01L29/516 , H01L29/6684 , H01L29/78391
摘要： An interfacial layer is formed in a manner that enables a ferroelectric layer to be formed such that formation of ferroelectric crystalline phases (e.g., orthorhombic crystalline phases) in the ferroelectric layer is increased and formation of non-ferroelectric crystalline phases (e.g., monoclinic phases, tetragonal phases) in the ferroelectric layer is reduced. To achieve this, the grain size and/or other properties of the interfacial layer may be controlled during formation of the interfacial layer such that the grain size and/or other properties of the interfacial layer facilitate formation of a larger grain size in the ferroelectric layer. At larger grain sizes in the ferroelectric layer, the concentration of the ferroelectric crystalline phases in the crystal structure of the ferroelectric layer may be increased relative to if the ferroelectric layer were formed to a smaller grain size.
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公开(公告)号：US20230413673A1
公开(公告)日：2023-12-21
申请号：US17807617
申请日：2022-06-17
发明人： Fu-Hai LI , Kuen-Yi CHEN , Yi Ching ONG , Kuo-Ching HUANG , Harry Hak Lay CHUANG
IPC分类号： H01L37/02 , H01L27/16 , H01L41/187
CPC分类号： H01L37/025 , H01L27/16 , H01L41/1876
摘要： A pyroelectric generator may be included in the same semiconductor device as a radio frequency (RF) switch (e.g., a phase-change material (PCM) RF switch and/or other types of RF switch). The pyroelectric generator includes a pyroelectric material layer between two electrodes. The pyroelectric generator is configured to scavenge thermal energy that is generated during the operation of the RF switch, and to convert the thermal energy into electrical energy that may be stored and reused.
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公开(公告)号：US20240332170A1
公开(公告)日：2024-10-03
申请号：US18194193
申请日：2023-03-31
发明人： Chien Hung LIU , Harry-HakLay CHUANG , Kuo-Ching HUANG , Yu-Sheng CHEN , Yi Ching ONG , Yu-Jui WU
IPC分类号： H01L23/522 , H01F17/00 , H01F17/06
CPC分类号： H01L23/5227 , H01F17/0033 , H01F17/06 , H01L23/5226 , H01L28/10
摘要： Some implementations described herein provide an inductor device formed in a substrate of a semiconductor device including an integrated circuit device. The inductor device may use one or more conduction layers that are included in the substrate. Furthermore, the inductor device may be electrically coupled to the integrated circuit device. By forming the inductor device in the substrate of the semiconductor device, an electrical circuit including the inductor device and the integrated circuit device may be formed within a single semiconductor device.
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公开(公告)号：US20240234401A9
公开(公告)日：2024-07-11
申请号：US18302466
申请日：2023-04-18
发明人： Chien Hung LIU , Yu-Sheng CHEN , Yi Ching ONG , Hsien Jung CHEN , Kuen-Yi CHEN , Kuo-Ching HUANG , Harry-HakLay CHUANG , Wei-Cheng WU , Yu-Jen WANG
IPC分类号： H01L25/18 , H01L23/00 , H01L23/48 , H01L23/522
CPC分类号： H01L25/18 , H01L23/481 , H01L23/5227 , H01L24/08 , H01L28/40 , H01L2224/08145
摘要： A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.
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公开(公告)号：US20240136346A1
公开(公告)日：2024-04-25
申请号：US18302466
申请日：2023-04-17
发明人： Chien Hung LIU , Yu-Sheng CHEN , Yi Ching ONG , Hsien Jung CHEN , Kuen-Yi CHEN , Kuo-Ching HUANG , Harry-HakLay CHUANG , Wei-Cheng WU , Yu-Jen WANG
IPC分类号： H01L25/18 , H01L23/00 , H01L23/48 , H01L23/522
CPC分类号： H01L25/18 , H01L23/481 , H01L23/5227 , H01L24/08 , H01L28/40 , H01L2224/08145
摘要： A semiconductor die package includes an inductor-capacitor (LC) semiconductor die that is directly bonded with a logic semiconductor die. The LC semiconductor die includes inductors and capacitors that are integrated into a single die. The inductors and capacitors of the LC semiconductor die may be electrically connected with transistors and other logic components on the logic semiconductor die to form a voltage regulator circuit of the semiconductor die package. The integration of passive components (e.g., the inductors and capacitors) of the voltage regulator circuit into a single semiconductor die reduces signal propagation distances in the voltage regulator circuit, which may increase the operating efficiency of the voltage regulator circuit, may reduce the formfactor for the semiconductor die package, may reduce parasitic capacitance and/or may reduce parasitic inductance in the voltage regulator circuit (thereby improving the performance of the voltage regulator circuit), among other examples.
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公开(公告)号：US20230403864A1
公开(公告)日：2023-12-14
申请号：US17840003
申请日：2022-06-14
发明人： Wei Ting HSIEH , Kuen-Yi CHEN , Yi-Hsuan CHEN , Yu-Wei TING , Yi Ching ONG , Kuo-Ching HUANG
IPC分类号： H01L27/11507 , G11C11/22
CPC分类号： H01L27/11507 , G11C11/221 , G11C11/2275
摘要： A semiconductor device includes a first capacitor having a ferroelectric film disposed between two electrodes, a second capacitor, having another dielectric film disposed between two electrodes. A first voltage is applied across the first capacitor such that the ferroelectric film is polarized, altering the effective resistance through the device. A second voltage is applied across the first capacitor, such that a leakage current transits the ferroelectric film, and accumulates along an electrode of the second capacitor, and the gate of a transistor, thereby effecting a change to the drain to source resistance of the transistor which may be measured to determine the polarization state of the ferroelectric film.
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