专利检索 ap:("Taiwan Semiconductor Manufacturing Company Limited") AND inv:"Chun-Chieh Li" 第 1 页

1.

发明公开
FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICE USING A MAGNESIUM OXIDE TUNNELING DIELECTRIC AND METHODS FOR FORMING THE SAME 审中-公开

公开(公告)号：US20240365560A1

公开(公告)日：2024-10-31

申请号：US18768265

申请日：2024-07-10

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Mauricio Manfrini , Bo-Feng Young , Chun-Chieh Li , Han-Jong Chia , Sai-Hooi Yeong

IPC分类号： H10B51/30 , H01L21/28 , H01L29/51 , H01L29/66 , H01L29/78

CPC分类号： H10B51/30 , H01L29/40111 , H01L29/516 , H01L29/6684 , H01L29/78391

摘要： A ferroelectric tunnel junction (FTJ) memory device includes a bottom electrode located over a substrate, a top electrode overlying the bottom electrode, and a ferroelectric tunnel junction memory element located between the bottom electrode and the top electrode. The ferroelectric tunnel junction memory element includes at least one ferroelectric material layer and at least one tunneling dielectric layer.

2.

发明授权
Ferroelectric tunnel junction memory device using a magnesium oxide tunneling dielectric and methods for forming the same 有权

公开(公告)号：US12120885B2

公开(公告)日：2024-10-15

申请号：US18354858

申请日：2023-07-19

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Mauricio Manfrini , Bo-Feng Young , Chun-Chieh Li , Han-Jong Chia , Sai-Hooi Yeong

IPC分类号： H01L29/78 , H01L21/28 , H01L29/51 , H01L29/66 , H10B51/30

CPC分类号： H10B51/30 , H01L29/40111 , H01L29/516 , H01L29/6684 , H01L29/78391

摘要： A ferroelectric tunnel junction (FTJ) memory device includes a bottom electrode located over a substrate, a top electrode overlying the bottom electrode, and a ferroelectric tunnel junction memory element located between the bottom electrode and the top electrode. The ferroelectric tunnel junction memory element includes at least one ferroelectric material layer and at least one tunneling dielectric layer.