公开(公告)号：US20240224823A1

公开(公告)日：2024-07-04

申请号：US18304551

申请日：2023-04-21

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Hung-Ju LI ,  Chien Ta HUANG ,  Kuo-Pin CHANG ,  Yu-Wei TING ,  Kuo-Ching HUANG

IPC分类号： H10N70/00

CPC分类号： H10N70/8413 ,  H10N70/063 ,  H10N70/8613 ,  H10N70/8828

摘要： A heater material layer is over a substrate. A reactive sputtering process is performed while the substrate and the heater material layer are placed in a process chamber. Sputtered aluminum atoms and reactive nitrogen-containing molecules react inside the process chamber to form a continuous inhomogeneous aluminum nitride layer on the heater material layer. The continuous inhomogeneous aluminum nitride layer is formed such that a top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The continuous inhomogeneous aluminum nitride layer and the heater material layer are patterned into an inhomogeneous aluminum nitride layer and a heater line. A phase change material (PCM) line is formed over the aluminum nitride layer to provide a radio-frequency switch.

公开(公告)号：US20240130257A1

公开(公告)日：2024-04-18

申请号：US18304533

申请日：2023-04-21

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Fu-Hai LI ,  Yi Ching ONG ,  Hsin Heng WANG ,  Tsung-Hao YEH ,  Yu-Wei TING ,  Kuo-Pin CHANG ,  Hung-Ju LI ,  Kuo-Ching HUANG

IPC分类号： H10N70/00 ,  H10N70/20

CPC分类号： H10N70/8613 ,  H10N70/023 ,  H10N70/026 ,  H10N70/231

摘要： Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.