公开(公告)号：US20230261004A1

公开(公告)日：2023-08-17

申请号：US17674348

申请日：2022-02-17

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Harry-Hak-Lay CHUANG ,  Kuo-Ching HUANG ,  Wei-Cheng WU ,  Hsin Fu LIN ,  Henry WANG ,  Chien Hung LIU ,  Tsung-Hao YEH ,  Hsien Jung CHEN

IPC分类号： H01L27/12 ,  H01L21/762 ,  H01L29/66

CPC分类号： H01L27/1203 ,  H01L21/76251 ,  H01L29/66772

摘要： A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device on the top semiconductor layer.

公开(公告)号：US20230352612A1

公开(公告)日：2023-11-02

申请号：US17730392

申请日：2022-04-27

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Fu-Hai LI ,  Yi Ching ONG ,  Kuo-Ching HUANG

IPC分类号： H01L31/07 ,  H01L31/053 ,  H01L31/18

CPC分类号： H01L31/07 ,  H01L31/053 ,  H01L31/18

摘要： A semiconductor structure may include semiconductor devices located on a substrate, metal interconnect structures that are located within dielectric material layers overlying the semiconductor devices and are electrically connected to the semiconductor devices, and an energy harvesting device located over the metal interconnect structures and comprising a Schottky barrier diode, a first diode electrode located on a first side of the Schottky barrier diode, and a second diode electrode connected to a second side of the Schottky barrier diode

公开(公告)号：US20240224823A1

公开(公告)日：2024-07-04

申请号：US18304551

申请日：2023-04-21

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Hung-Ju LI ,  Chien Ta HUANG ,  Kuo-Pin CHANG ,  Yu-Wei TING ,  Kuo-Ching HUANG

IPC分类号： H10N70/00

CPC分类号： H10N70/8413 ,  H10N70/063 ,  H10N70/8613 ,  H10N70/8828

摘要： A heater material layer is over a substrate. A reactive sputtering process is performed while the substrate and the heater material layer are placed in a process chamber. Sputtered aluminum atoms and reactive nitrogen-containing molecules react inside the process chamber to form a continuous inhomogeneous aluminum nitride layer on the heater material layer. The continuous inhomogeneous aluminum nitride layer is formed such that a top surface portion of the aluminum nitride layer has a higher atomic concentration of nitrogen than a bottom surface portion of the aluminum nitride layer contacting a top surface of the heater line. The continuous inhomogeneous aluminum nitride layer and the heater material layer are patterned into an inhomogeneous aluminum nitride layer and a heater line. A phase change material (PCM) line is formed over the aluminum nitride layer to provide a radio-frequency switch.

公开(公告)号：US20240130257A1

公开(公告)日：2024-04-18

申请号：US18304533

申请日：2023-04-21

申请人： Taiwan Semiconductor Manufacturing Company Limited

发明人： Fu-Hai LI ,  Yi Ching ONG ,  Hsin Heng WANG ,  Tsung-Hao YEH ,  Yu-Wei TING ,  Kuo-Pin CHANG ,  Hung-Ju LI ,  Kuo-Ching HUANG

IPC分类号： H10N70/00 ,  H10N70/20

CPC分类号： H10N70/8613 ,  H10N70/023 ,  H10N70/026 ,  H10N70/231

摘要： Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.