公开(公告)号：US20150214266A1

公开(公告)日：2015-07-30

申请号：US14162821

申请日：2014-01-24

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： MIN-FENG KAO ,  WEI-CHENG HSU ,  TZU-JUI WANG ,  HSIAO-HUI TSENG ,  TZU-HSUAN HSU ,  JEN-CHENG LIU ,  JHY-JYI SZE ,  DUN-NIAN YAUNG

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/146 ,  H01L27/14603 ,  H01L27/14614 ,  H01L27/14616 ,  H01L27/1463

Abstract: A complementary metal oxide semiconductor (CMOS) image sensor and a method for fabricating the same are provided. An example CMOS image sensor includes first active regions of a semiconductor substrate, where the first active regions are arranged in rows or columns. Photosensitive regions are formed in the first active regions. The CMOS image sensor also includes second active regions of the semiconductor substrate that are interposed between the first active regions. Each of the second active regions includes a device isolation region formed by doping the semiconductor substrate with impurities. Each of the second active regions also includes a channel region of a field effect transistor (FET) that is formed within the device isolation region and is configured to connect source and drain regions of the FET. At least one control gate is formed over each of the second active regions.

Abstract translation: 提供互补金属氧化物半导体（CMOS）图像传感器及其制造方法。 示例CMOS图像传感器包括半导体衬底的第一有源区，其中第一有源区以行或列排列。 在第一活性区域中形成感光区域。 CMOS图像传感器还包括介于第一有源区之间的半导体衬底的第二有源区。 每个第二有源区包括通过用杂质掺杂半导体衬底而形成的器件隔离区。 第二有源区中的每一个还包括场效应晶体管（FET）的沟道区，该场效应晶体管（FET）形成在器件隔离区内，并且被配置为连接FET的源极和漏极区。 在每个第二活动区域上形成至少一个控制栅极。

公开(公告)号：US20150076637A1

公开(公告)日：2015-03-19

申请号：US14025890

申请日：2013-09-13

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： TZU-JUI WANG ,  KENG-YU CHOU ,  CHUN-HAO CHUANG ,  MING-CHIEH HSU ,  YUICHIRO YAMASHITA ,  JEN-CHENG LIU ,  DUN-NIAN YAUNG

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/0232 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14641 ,  H01L31/02162 ,  H01L31/02325 ,  H01L31/18

Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.

Abstract translation: 提供一种形成光电二极管的方法。 该方法包括：在衬底上形成对应于第一像素的第一底部电极和对应于第二像素的第二底部电极; 在所述衬底上形成介电层; 在衬底上图形化介电层; 在衬底上形成光转换层; 以及在所述光转换层上形成顶部电极; 在所述顶部电极上形成滤色器层，其中所述电介质层的至少一部分将对应于第一像素的滤色器层的第一部分与对应于第二像素的所述彩色滤光片层的第二部分分离， 电介质层的折射率低于滤色器层的折射率。

公开(公告)号：US20160218131A1

公开(公告)日：2016-07-28

申请号：US15088238

申请日：2016-04-01

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： TZU-JUI WANG ,  KENG-YU CHOU ,  CHUN-HAO CHUANG ,  MING-CHIEH HSU ,  REN-JIE LIN ,  JEN-CHENG LIU ,  DUN-NIAN YAUNG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14685 ,  H01L31/02327

Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.

Abstract translation: 光电二极管包括像素单元，光转换层和电介质层。 像素单元包括一对像素。 光转换层位于像素单元之上，并且具有一对部分，每一部分对应于相应的像素之一。 介电层位于光转换层的部分之间。 还公开了制造光电二极管的方法。

公开(公告)号：US20150279901A1

公开(公告)日：2015-10-01

申请号：US14731474

申请日：2015-06-05

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： TZU-JUI WANG ,  KENG-YU CHOU ,  CHUN-HAO CHUANG ,  MING-CHIEH HSU ,  REN-JIE LIN ,  JEN-CHENG LIU ,  DUN-NIAN YAUNG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14685 ,  H01L31/02327

Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.

Abstract translation: 提供一种形成光电二极管的方法。 该方法包括：通过使用导电层在衬底上形成第一对电极和第二对电极; 在所述衬底上形成介电层; 在衬底上图形化介电层; 在衬底上形成光转换层; 以及在所述光转换层上形成滤色器层，其中所述电介质层的至少一部分将对应于第一像素的滤色器层的第一部分与对应于第二像素的滤色器层的第二部分分离， 并且所述电介质层的折射率低于所述滤色器层的折射率，其中所述第一对电极对应于所述第一像素，所述第二对电极对应于所述第二像素。

公开(公告)号：US20150061061A1

公开(公告)日：2015-03-05

申请号：US14014488

申请日：2013-08-30

Applicant: Taiwan Semiconductor Manufacturing Company Limited

Inventor： TZU-JUI WANG ,  KENG-YU CHOU ,  CHUN-HAO CHUANG ,  MING-CHIEH HSU ,  REN-JIE LIN ,  JEN-CHENG LIU ,  DUN-NIAN YAUNG

IPC: H01L31/0232

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14665 ,  H01L27/14685 ,  H01L31/02327

Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.

Abstract translation: 提供一种形成光电二极管的方法。 该方法包括：通过使用导电层在衬底上形成第一对电极和第二对电极; 在所述衬底上形成介电层; 在衬底上图形化介电层; 在衬底上形成光转换层; 以及在所述光转换层上形成滤色器层，其中所述电介质层的至少一部分将对应于第一像素的滤色器层的第一部分与对应于第二像素的所述彩色滤光片层的第二部分分离， 并且所述电介质层的折射率低于所述滤色器层的折射率，其中所述第一对电极对应于所述第一像素，所述第二对电极对应于所述第二像素。