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公开(公告)号：US20240125713A1
公开(公告)日：2024-04-18
申请号：US18152409
申请日：2023-01-10
发明人： Hao Chun Yang , Ming-Da Cheng , Pei-Wei Lee , Mirng-Ji Lii
CPC分类号： G01N21/9505 , G01N21/59 , G01N2201/06113 , G01N2201/0636
摘要： A method includes directing light at a first side of a semiconductor structure; detecting a first light intensity at a second side of the semiconductor structure, wherein the first light intensity corresponds to the light that penetrated the semiconductor structure from the first side to the second side; and comparing the first light intensity to a second light intensity, wherein the second light intensity corresponds to an expected intensity of light.
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公开(公告)号：US20240124298A1
公开(公告)日：2024-04-18
申请号：US18152511
申请日：2023-01-10
发明人： Yun-Chung Wu , Jhao-Yi Wang , Hao Chun Yang , Pei-Wei Lee , Wen-Hsiung Lu
CPC分类号： B81C1/00095 , B81B7/0006 , B81B2207/07
摘要： Microelectromechanical devices and methods of manufacture are presented. Embodiments include bonding a mask substrate to a first microelectromechanical system (MEMS) device. After the bonding has been performed, the mask substrate is patterned. A first conductive pillar is formed within the mask substrate, and a second conductive pillar is formed within the mask substrate, the second conductive pillar having a different height from the first conductive pillar. The mask substrate is then removed.
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