摘要:
A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要:
A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.
摘要:
Provided is a solid-state imaging device having pixel units that are two-dimensionally arranged, and including: a photodiode that generates an optical signal charge corresponding to an intensity and an exposure time of light; a MOS transistor that transfers the optical signal charge; an accumulating unit that generates a voltage corresponding to the signal charge through the MOS transistor; a storing unit that stores a voltage corresponding to an optical signal charge in the accumulating unit; and a voltage setting unit that sets a value of a voltage in the accumulating unit to a value corresponding to the voltage in the storing unit.
摘要:
A plurality of pixel circuits arranged in rows and columns, and each of which outputs an electric signal according to an amount of received light; a first column signal line provided for each of the columns, and for sequentially transferring the electric signals from said pixel circuits in a corresponding column; and a holding circuit provided for each of the pixel circuits in each column, and which holds the electric signal transferred through the column signal line in the corresponding column are provided. A holding circuit includes a first capacitor which holds a first electric signal of the corresponding pixel circuit in a reset state; and a second capacitor which holds a second electric signal after the corresponding pixel circuit receives light. A difference circuit calculates a difference between two electric signals held by the first capacitor and the second capacitor in a same holding circuit.
摘要:
A solid-state imaging device includes: pixel circuits arranged in a matrix which perform photoelectric conversion on received light; and an AD conversion unit converting the resultant signal voltage of the photoelectric conversion. The AD conversion unit includes: a reference voltage generation unit generating plural reference voltages which are different from each other within a possible range for a signal voltage; a most significant bit conversion unit that identifies a voltage section including the signal voltage from among the voltage sections each having a corresponding one of the reference voltages as a base point and determines the identified result as the value of the most significant bit of the digital signal; and a least significant bit conversion unit that converts, into the least significant bit of the digital signal, the difference voltage between the signal voltage and the reference voltage as the base point of the identified voltage section.
摘要:
An object of the present invention is to provide a two-dimensional solid state imaging device which can realize speeding up of signal output. The two-dimensional solid state imaging device includes: a pixel region; a first capacitance element and a second capacitance element each of which is arranged for a different column of pixels and accumulates pixel signals of the corresponding column of pixels; a first horizontal signal line and a second horizontal signal line each of which transmits the pixel signals accumulated in a corresponding capacitance element; a common signal line connected to the horizontal signal lines; a scan timing generation unit and a switch unit which control readout of the pixel signals from the capacitance element to the horizontal signal line; and an external output timing unit and a switch unit which select the horizontal signal line and control output of the pixel signals from the selected horizontal signal line to the common signal line. Here, the scan timing generation unit and the switch unit, and the external output timing unit and the switch unit control the readout and the output of the pixel signals, respectively, so that a time period required for the readout of the pixel signals from the capacitance element to the signal line is longer than a time period required for the output of the pixel signals from the signal line to the common signal line.
摘要:
The present invention provides a solid-state imaging device which can output a digital signal at a high speed without using a high-speed clock. The solid-state imaging device includes light receiving elements provided in an array and generating signal voltages based on light intensity of received light and AD converters each of which is provided in each of columns in the array. Each of the AD converters includes: a reference voltage generating unit (10) generating reference voltages; comparators (11a through 11c) comparing in parallel a current signal voltage which is one of signal voltages generated by the light receiving elements in the respective matrix columns with the reference voltages generated by the reference voltage generating unit; a digital signal generating circuit (23) generating a digital signal showing a result of the comparison and outputting the digital signal out of the AD converter.
摘要:
An AD converter includes an analog data storing unit, a first DA converter for converting an input digital data into a first analog reference voltage which varies within a first voltage range in a range of every possible signal voltage of the input analog data, a second DA converter for converting the input digital data into a second analog reference voltage which varies within a second voltage range in the range of every possible signal voltage of the input analog data, a first comparator for comparing the input analog data with the first reference voltage, a second comparator for comparing the input analog data with the second reference voltage and a digital data storing unit for storing a digital data corresponding to a point of time when a change of state occurs in the comparison results of each of the first and second comparators.
摘要:
A solid state imaging device includes an imaging area where a plurality of first pixels and a plurality of second pixels are respectively arranged in the form of a matrix, each of the first pixels and the second pixels having a photoelectric conversion portion and outputting a signal in accordance with brightness of incident light when selected; a plurality of first memories that respectively store signals of selected first pixels out of the plurality of first pixels; and a plurality of second memories that are respectively connected in parallel to the first memories and respectively store signals of selected second pixels out of the plurality of second pixels. The signals stored in the first memories and in the second memories are successively read to a horizontal signal line.
摘要:
The present invention provides a solid-state imaging device which can output a digital signal at a high speed without using a high-speed clock. The solid-state imaging device includes light receiving elements provided in an array and generating signal voltages based on light intensity of received light and AD converters each of which is provided in each of columns in the array. Each of the AD converters includes: a reference voltage generating unit (10) generating reference voltages; comparators (11a through 11c) comparing in parallel a current signal voltage which is one of signal voltages generated by the light receiving elements in the respective matrix columns with the reference voltages generated by the reference voltage generating unit; a digital signal generating circuit (23) generating a digital signal showing a result of the comparison and outputting the digital signal out of the AD converter.