公开(公告)号：US08866059B2

公开(公告)日：2014-10-21

申请号：US13055863

申请日：2009-07-23

申请人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

发明人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

IPC分类号： H01L27/00 ,  H01L27/146 ,  H04N5/235 ,  H04N5/355

CPC分类号： H01L27/14603 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/2355 ,  H04N5/35572 ,  H04N5/3559

摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

摘要翻译： 可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

公开(公告)号：US20110121162A1

公开(公告)日：2011-05-26

申请号：US13055863

申请日：2009-07-23

申请人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

发明人： Takahiko Murata ,  Takayoshi Yamada ,  Yoshihisa Kato ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/2355 ,  H04N5/35572 ,  H04N5/3559

摘要： A solid-state imaging device that is configurable into a small size appropriate for expanding dynamic range includes: a photodiode which is a photoelectric conversion unit that generates charge by incident light; a MOS transistor which is connected to the photodiode and transfers the charge; a floating diffusion region which is a first accumulation unit which accumulates the charge via the MOS transistor; a MOS transistor which is a second transfer unit connected to the floating diffusion region and connected in series to the MOS transistor; and a MOS transistor which is an output unit which outputs, via the MOS transistor, a signal voltage in accordance with an amount of the charge.

摘要翻译： 可配置为适于扩展动态范围的小尺寸的固态成像装置包括：光电二极管，其是通过入射光产生电荷的光电转换单元; 连接到光电二极管并传送电荷的MOS晶体管; 浮动扩散区域，其是通过MOS晶体管积累电荷的第一累积单元; MOS晶体管，其是与所述浮动扩散区域连接并与所述MOS晶体管串联连接的第二转移单元; 以及MOS晶体管，其是经由MOS晶体管输出根据电荷量的信号电压的输出单元。

公开(公告)号：US07355641B2

公开(公告)日：2008-04-08

申请号：US10754799

申请日：2004-01-08

申请人： Takumi Yamaguchi ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

发明人： Takumi Yamaguchi ,  Shigetaka Kasuga ,  Mitsuyoshi Mori

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045

摘要： A solid-state imaging device includes: an imaging portion in which a plurality of pixels for photoelectrically converting incident light are arranged so as to form a plural kinds of pixel lines having different color arrangements; a memory in which pixel signals obtained from the pixels of at least one line in the imaging portion are stored; an output signal line into which the pixel signals stored in the memory are read out; and an output portion from which signals of the output signal line are output. Pixel signals obtained from non-adjacent pixels of a first color in one line are read out into the output signal lines sequentially, and then pixel signals obtained from non-adjacent pixels of a second color are read out into the output signal lines sequentially. Pixel signals of the same color are output sequentially, so that it is not necessary to operate color selection switch for every pixel signals at high speed. Furthermore, it is possible to suppress the mixing of adjacent colors.

摘要翻译： 一种固态成像装置，包括：成像部，其中配置用于光电转换入射光的多个像素，以形成具有不同颜色配置的多种像素线; 存储从摄像部中的至少一行的像素得到的像素信号的存储器; 读出存储在存储器中的像素信号的输出信号线; 以及输出部分，输出信号线的信号。 从一行中的第一颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中，然后从第二颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中。 相同颜色的像素信号顺序输出，因此不需要以高速度对每个像素信号进行颜色选择开关。 此外，可以抑制相邻颜色的混合。

公开(公告)号：US08378401B2

公开(公告)日：2013-02-19

申请号：US13335537

申请日：2011-12-22

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US08106431B2

公开(公告)日：2012-01-31

申请号：US12178250

申请日：2008-07-23

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US08084796B2

公开(公告)日：2011-12-27

申请号：US12202804

申请日：2008-09-02

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US07436010B2

公开(公告)日：2008-10-14

申请号：US10706918

申请日：2003-11-14

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Takahiko Murata

IPC分类号： H01L31/062

CPC分类号： H01L27/14609 ,  H01L27/14641 ,  H04N5/3741 ,  H04N5/37457

摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.

摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个转移晶体管中的每一个连接到每个光电部分中的每一个，每个光电部分包括在每个所述光电转换的同一行中，并被所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。

公开(公告)号：US08704321B2

公开(公告)日：2014-04-22

申请号：US13462889

申请日：2012-05-03

申请人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

发明人： Toru Okino ,  Yoshihisa Kato ,  Yutaka Hirose ,  Mitsuyoshi Mori

IPC分类号： H01L29/51

CPC分类号： H01L27/14625 ,  H01L27/1464 ,  H01L27/14665 ,  H01L27/14685

摘要： Solid-state imaging device of the present invention is a backside-illumination-type solid-state imaging device including wiring layer formed on first surface side of semiconductor substrate; and light receiving section that photoelectrically converts light incident from second surface side that is opposite from first surface side, wherein spontaneous polarization film formed of a material having spontaneous polarization is formed on a light receiving surface of light receiving section. Accordingly, a hole accumulation layer can be formed on the light receiving surface of light receiving section, and a dark current can be suppressed.

摘要翻译： 本发明的固体摄像装置是在半导体基板的第一面侧形成有配线层的背照明型固体摄像元件， 以及光接收从第一表面侧相反的第二表面侧入射的光的光接收部分，其中由具有自发极化的材料形成的自发偏振膜形成在光接收部分的光接收表面上。 因此，能够在受光部的受光面上形成空穴积聚层，能够抑制暗电流。

公开(公告)号：US08680640B2

公开(公告)日：2014-03-25

申请号：US13462895

申请日：2012-05-03

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Yutaka Hirose ,  Yoshihisa Kato

IPC分类号： H01L27/148

CPC分类号： H01L27/14645 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464

摘要： A solid-state imaging device includes semiconductor substrate; a plurality of photoelectric conversion sections of n-type that are formed at an upper part of semiconductor substrate and arranged in a matrix; output circuit that is formed on a charge detection surface that is one surface of semiconductor substrate and detects charges stored in photoelectric conversion sections; a plurality of isolating diffusion layers of a p-type that are formed under output circuit and include high concentration p-type layers adjacent to respective photoelectric conversion sections; and color filters formed on a light incident surface that is the other surface opposing the one surface of semiconductor substrate and transmit light with different wavelengths. Shapes of respective photoelectric conversion sections correspond to color filters and differ depending on the high concentration p-type layer configuring isolating diffusion layer.

摘要翻译： 固态成像装置包括半导体衬底; 多个n型光电转换部，形成在半导体衬底的上部并且以矩阵形式布置; 输出电路，其形成在作为半导体衬底的一个表面的电荷检测表面上，并检测存储在光电转换部中的电荷; 多个形成在输出电路下的p型隔离扩散层，并且包括与各个光电转换部分相邻的高浓度p型层; 以及形成在作为与半导体衬底的一个表面相对的另一表面的光入射表面上并且透射具有不同波长的光的滤色器。 各个光电转换部分的形状对应于滤色器，并且根据构成隔离扩散层的高浓度p型层而不同。

公开(公告)号：US07569906B2

公开(公告)日：2009-08-04

申请号：US11702531

申请日：2007-02-06

申请人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

发明人： Mitsuyoshi Mori ,  Keisuke Tanaka ,  Takumi Yamaguchi ,  Takuma Katayama

IPC分类号： H01L29/00 ,  H01L29/84

CPC分类号： H04R19/04 ,  H01L25/162 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.

摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。