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    ORGANIC SOLAR CELL
    4.
    发明申请
    ORGANIC SOLAR CELL 审中-公开
    有机太阳能电池

    公开(公告)号：US20090199903A1

    公开(公告)日：2009-08-13

    申请号：US12307009

    申请日：2007-05-31

    申请人： Takahito Oyamada ,  Chihaya Adachi

    发明人： Takahito Oyamada ,  Chihaya Adachi

    IPC分类号： H01L31/0256

    CPC分类号： H01L51/422 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/424 ,  H01L51/442 ,  Y02E10/549

    摘要： To provide an organic solar cell in which a light is preferably introduced from a side opposite to a substrate and the light thus introduced can be efficiently used.The organic solar cell including a substrate; a first electrode; an organic solid layer; and a second electrode, laminated in this order, wherein the second electrode is made from an alloy containing magnesium and has a thickness of 1 to 20 nm.

    摘要翻译： 为了提供一种有机太阳能电池，其中优选从与衬底相对的一侧引入光，并且可以有效地使用如此引入的光。 有机太阳能电池包括基板; 第一电极; 有机固体层; 和第二电极，其中所述第二电极由含有镁的合金制成，并且具有1至20nm的厚度。

    Organic semiconductor device
    5.
    发明授权
    Organic semiconductor device 有权
    有机半导体器件

    公开(公告)号：US07811852B2

    公开(公告)日：2010-10-12

    申请号：US12174685

    申请日：2008-07-17

    申请人： Yoshiaki Yamamoto ,  Takahito Oyamada ,  Chihaya Adachi

    发明人： Yoshiaki Yamamoto ,  Takahito Oyamada ,  Chihaya Adachi

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0512 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/52 ,  H01L51/5203

    摘要： An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

    摘要翻译： 具有垂直结构的有机半导体器件具有有机薄膜晶体管和发光元件的功能，其中在形成栅电极的情况下可以控制有机薄膜晶体管和发光元件两者的电特性 具有有机导电膜及其制造方法。 上述有机半导体器件具有以下结构：有机半导体膜被夹在用作有源薄膜晶体管的源电极和漏电极的一对电极之间，并且还用作发光元件的阳极和阴极， 作为栅电极的薄的有机导电膜被夹在有机半导体膜之间，有机导电膜的一部分与辅助电极电连接，由此有机薄膜晶体管和发光元件两者的电特性可以 被控制。

    Organic semiconductor device
    6.
    发明授权
    Organic semiconductor device 有权
    有机半导体器件

    公开(公告)号：US07429823B2

    公开(公告)日：2008-09-30

    申请号：US11277458

    申请日：2006-03-24

    申请人： Yoshiaki Yamamoto ,  Takahito Oyamada ,  Chihaya Adachi

    发明人： Yoshiaki Yamamoto ,  Takahito Oyamada ,  Chihaya Adachi

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01L51/0512 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/52 ,  H01L51/5203

    摘要： An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

    摘要翻译： 具有垂直结构的有机半导体器件具有有机薄膜晶体管和发光元件的功能，其中在形成栅电极的情况下可以控制有机薄膜晶体管和发光元件两者的电特性 具有有机导电膜及其制造方法。 上述有机半导体器件具有以下结构：有机半导体膜被夹在用作有源薄膜晶体管的源电极和漏电极的一对电极之间，并且还用作发光元件的阳极和阴极， 作为栅电极的薄的有机导电膜被夹在有机半导体膜之间，有机导电膜的一部分与辅助电极电连接，由此有机薄膜晶体管和发光元件两者的电特性可以 被控制。

    Organic semiconductor light-emitting device and display using same
    7.
    发明授权
    Organic semiconductor light-emitting device and display using same 失效
    有机半导体发光装置和使用其的显示器

    公开(公告)号：US07973320B2

    公开(公告)日：2011-07-05

    申请号：US11661282

    申请日：2005-08-26

    申请人： Takahito Oyamada ,  Hiroyuki Uchiuzo ,  Chihaya Adachi

    发明人： Takahito Oyamada ,  Hiroyuki Uchiuzo ,  Chihaya Adachi

    IPC分类号： H01L27/15

    CPC分类号： H01L51/0545 ,  H01L27/3244 ,  H01L51/0053 ,  H01L51/0068 ,  H01L51/5203 ,  H01L51/5275 ,  H01L51/5296

    摘要： An organic semiconductor light-emitting device having the form of a field-effect transistor and a display using this device is provided. In the device, electrons and holes can be transported. The device comprises an organic semiconductor light-emitting layer capable of emitting light by recombination of holes and electrons, a hole injection electrode for injecting holes into the organic semiconductor light-emitting layer, an electron injection electrode for injecting electrons into the organic semiconductor light-emitting layer, and a gate electrode so disposed as to be opposed to the organic semiconductor light-emitting layer between the electrodes. When a control voltage is applied to the gate electrode, the carrier distribution in the organic semiconductor light-emitting layer is controlled. Thus, the light emission can be turned on/off and the emission intensity can be modulated.

    摘要翻译： 提供具有场效应晶体管形式的有机半导体发光器件和使用该器件的显示器。 在器件中，可以传输电子和空穴。 该装置包括能够通过空穴和电子的复合发光的有机半导体发光层，用于向有机半导体发光层注入空穴的空穴注入电极，将电子注入有机半导体发光层的电子注入电极， 发光层和栅电极，其设置成与电极之间的有机半导体发光层相对。 当对栅电极施加控制电压时，控制有机半导体发光层中的载流子分布。 因此，可以开/关地发光，并且可以调制发光强度。

    ORGANIC SEMICONDUCTOR DEVICE
    8.
    发明申请
    ORGANIC SEMICONDUCTOR DEVICE 有权
    有机半导体器件

    公开(公告)号：US20080277655A1

    公开(公告)日：2008-11-13

    申请号：US12174685

    申请日：2008-07-17

    申请人： Yoshiaki Yamamoto ,  Takahito Oyamada ,  Chihaya Adachi

    发明人： Yoshiaki Yamamoto ,  Takahito Oyamada ,  Chihaya Adachi

    IPC分类号： H01L51/40 ,  H01L51/30

    CPC分类号： H01L51/0512 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/52 ,  H01L51/5203

    摘要： An organic semiconductor device with a vertical structure having both functions of an organic thin film transistor and light-emitting element, where the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled in the case of forming a gate electrode with an organic conductive film, and a manufacturing method thereof. The above organic semiconductor device has such a structure that organic semiconductor films are sandwiched between a pair of electrodes functioning as a source electrode and drain electrode of an organic thin film transistor and also functioning as an anode and cathode of a light-emitting element, a thin organic conductive film functioning as a gate electrode is sandwiched between the organic semiconductor films, and a part of the organic conductive film is electrically connected to an auxiliary electrode, thereby the electrical characteristics as both the organic thin film transistor and light-emitting element can be controlled.

    摘要翻译： 具有垂直结构的有机半导体器件具有有机薄膜晶体管和发光元件的功能，其中在形成栅电极的情况下可以控制有机薄膜晶体管和发光元件两者的电特性 具有有机导电膜及其制造方法。 上述有机半导体器件具有以下结构：有机半导体膜被夹在用作有源薄膜晶体管的源电极和漏电极的一对电极之间，并且还用作发光元件的阳极和阴极， 作为栅电极的薄的有机导电膜被夹在有机半导体膜之间，有机导电膜的一部分与辅助电极电连接，由此有机薄膜晶体管和发光元件两者的电特性可以 被控制。

    Organic semiconductor device and method for manufacturing same
    9.
    发明授权
    Organic semiconductor device and method for manufacturing same 有权
    有机半导体装置及其制造方法

    公开(公告)号：US07598668B2

    公开(公告)日：2009-10-06

    申请号：US10569807

    申请日：2004-08-25

    申请人： Takahito Oyamada ,  Chihaya Adachi

    发明人： Takahito Oyamada ,  Chihaya Adachi

    IPC分类号： H01J63/04 ,  H01J1/62

    CPC分类号： H01L51/105 ,  H01L51/0053 ,  H01L51/5225 ,  Y10S428/917

    摘要： An organic semiconductor device includes organic semiconductor layers (3, 4) and an electron injecting electrode (5) which is composed of MgAu alloy and injects electrons into the organic semiconductor layers (3, 4). The MgAu alloy forming the electron injecting electrode (5) may contain not more than 85 atom % of Au. The organic semiconductor device may further include a hole injecting electrode (2) for injecting holes into the organic semiconductor layers (3, 4). The electron injecting electrode and the hole injecting electrode are arranged apart from each other in such a manner that they fit to each other. The organic semiconductor device may further include a gate electrode which is arranged opposite, via an insulating film, to the region between the electron injecting electrode and the hole injecting electrode.

    摘要翻译： 有机半导体器件包括有机半导体层（3,4）和由MgAu合金构成的电子注入电极（5），并将电子注入到有机半导体层（3,4）中。 形成电子注入电极（5）的MgAu合金可以含有不超过85原子％的Au。 有机半导体器件还可以包括用于将空穴注入到有机半导体层（3,4）中的空穴注入电极（2）。 电子注入电极和空穴注入电极以彼此适配的方式彼此分开布置。 有机半导体器件还可以包括通过绝缘膜相对布置在电子注入电极和空穴注入电极之间的区域的栅电极。

    Switching element and method of making the same
    10.
    发明授权
    Switching element and method of making the same 失效
    开关元件及其制作方法

    公开(公告)号：US06815733B2

    公开(公告)日：2004-11-09

    申请号：US10392278

    申请日：2003-03-19

    申请人： Haruo Tanaka ,  Chihaya Adachi ,  Takahito Oyamada ,  Hiroyuki Sasabe

    发明人： Haruo Tanaka ,  Chihaya Adachi ,  Takahito Oyamada ,  Hiroyuki Sasabe

    IPC分类号： H01L2974

    CPC分类号： H01L51/0051 ,  H01L27/28 ,  H01L51/0084

    摘要： The switching element has a switching layer between a first electrode layer and a second electrode layer. The switching layer includes a charge transfer complex containing an electron donor and an electron acceptor. An insulating layer is provided between the first electrode layer and the switching layer, and contacts the switching layer. The switching layer switches from a high-resistance state to a low-resistance state upon application of a voltage greater than a first threshold value in a first bias direction. Thereafter, the switching layer maintains the low-resistance state when the applied voltage decreases beyond the first threshold value. When the applied voltage becomes not smaller than a second threshold value in a second bias direction or a reverse direction to the first bias direction, the switching layer switches from the low-resistance state to the high-resistance state. Thereafter, the switching layer maintains the high-resistance state when the applied voltage decreases beyond the second threshold value.