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    Inorganic film base plate, process for producing the same, piezoelectric device, ink jet type recording head, and ink jet type recording apparatus
    1.
    发明申请
    Inorganic film base plate, process for producing the same, piezoelectric device, ink jet type recording head, and ink jet type recording apparatus 有权
    无机膜底板，其制造方法，压电装置，喷墨式记录头和喷墨式记录装置

    公开(公告)号：US20070097181A1

    公开(公告)日：2007-05-03

    申请号：US11586651

    申请日：2006-10-26

    申请人： Takamichi Fujii ,  Hiroyuki Usami

    发明人： Takamichi Fujii ,  Hiroyuki Usami

    IPC分类号： B41J2/045

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/21

    摘要： An inorganic film base plate is produced with a process comprising the steps of: preparing a surface recess-protrusion base plate, which is provided with a recess-protrusion pattern on a surface, and forming an inorganic film along a surface shape of the surface recess-protrusion base plate, the inorganic film containing a plurality of pillar-shaped structure bodies, each of which extends in a direction nonparallel with the base plate surface of the surface recess-protrusion base plate. Force of physical action may then be exerted upon the thus formed inorganic film in order to separate an on-protrusion film region of the inorganic film and an adjacent on-recess film region of the inorganic film from each other.

    摘要翻译： 制造无机膜基板的方法包括以下步骤：制备在表面上设置有凹凸图案的表面凹凸基板，沿着表面凹部的表面形状形成无机膜 所述无机膜包含多个柱状结构体，每个柱状结构体在与所述表面凹凸基板的基板表面不平行的方向上延伸。 然后可以将如此形成的无机膜施加物理作用力，以将无机膜的突出膜区域和相邻的无机膜的凹陷膜区域彼此分离。

    Inorganic film base plate, process for producing the same, piezoelectric device, ink jet type recording head, and ink jet type recording apparatus
    2.
    发明授权
    Inorganic film base plate, process for producing the same, piezoelectric device, ink jet type recording head, and ink jet type recording apparatus 有权
    无机膜底板，其制造方法，压电装置，喷墨式记录头和喷墨式记录装置

    公开(公告)号：US07923903B2

    公开(公告)日：2011-04-12

    申请号：US11586651

    申请日：2006-10-26

    申请人： Takamichi Fujii ,  Hiroyuki Usami

    发明人： Takamichi Fujii ,  Hiroyuki Usami

    IPC分类号： H01L41/08

    CPC分类号： B41J2/14233 ,  B41J2/161 ,  B41J2/1629 ,  B41J2/1642 ,  B41J2/1646 ,  B41J2202/21

    摘要： An inorganic film base plate is produced with a process comprising the steps of: preparing a surface recess-protrusion base plate, which is provided with a recess-protrusion pattern on a surface, and forming an inorganic film along a surface shape of the surface recess-protrusion base plate, the inorganic film containing a plurality of pillar-shaped structure bodies, each of which extends in a direction nonparallel with the base plate surface of the surface recess-protrusion base plate. Force of physical action may then be exerted upon the thus formed inorganic film in order to separate an on-protrusion film region of the inorganic film and an adjacent on-recess film region of the inorganic film from each other.

    摘要翻译： 制造无机膜基板的方法包括以下步骤：制备在表面上设置有凹凸图案的表面凹凸基板，沿着表面凹部的表面形状形成无机膜 所述无机膜包含多个柱状结构体，每个柱状结构体在与所述表面凹凸基板的基板表面不平行的方向上延伸。 然后可以将如此形成的无机膜施加物理作用力，以将无机膜的突出膜区域和相邻的无机膜的凹陷膜区域彼此分离。

    Piezoelectric film, piezoelectric device and liquid ejection apparatus
    3.
    发明授权
    Piezoelectric film, piezoelectric device and liquid ejection apparatus 有权
    压电薄膜，压电装置和液体喷射装置

    公开(公告)号：US08672456B2

    公开(公告)日：2014-03-18

    申请号：US13168302

    申请日：2011-06-24

    申请人： Takami Arakawa ,  Takayuki Naono ,  Takamichi Fujii

    发明人： Takami Arakawa ,  Takayuki Naono ,  Takamichi Fujii

    IPC分类号： B41J2/045

    CPC分类号： H01L41/1876 ,  B41J2/14233 ,  B41J2202/03 ,  C04B35/493 ,  C04B2235/3255 ,  C04B2235/3298 ,  C04B2235/768 ,  C04B2235/79 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/316

    摘要： A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: PbaAb[(ZrcTi1-c)1-dBd]Oe,  (P) where Pb and A are A-site elements, and A is at least one element selected from a group consisting of Bi, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ca, Sr and Ba; Zr, Ti and B are B-site elements, and B is at least one element selected from a group consisting of Nb, Ta and Sb; a is an amount of lead, b is an amount of the element A, c is a Zr/Ti ratio, d is an amount of the element B, e is an amount of oxygen; values of a, b and d satisfy a

    摘要翻译： 压电膜具有由多个柱状晶体构成的柱状晶体结构，并含有下述式（P）表示的钙钛矿氧化物作为主要成分：PbaAb [（ZrcTi1-c）1-dBd] Oe，（P） 其中Pb和A是A位元素，A是选自Bi，La，Ce，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb中的至少一种元素 ，Lu，Ca，Sr和Ba; Zr，Ti和B是B位元素，B是选自Nb，Ta和Sb中的至少一种元素; a是铅的量，b是元素A的量，c是Zr / Ti比，d是元素B的量，e是氧的量; a，b和d的值满足<1，a + b> = 1和0

    Physical vapor deposition with phase shift
    6.
    发明授权
    Physical vapor deposition with phase shift 有权
    具有相移的物理气相沉积

    公开(公告)号：US08557088B2

    公开(公告)日：2013-10-15

    申请号：US12389241

    申请日：2009-02-19

    申请人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshikazu Hishinuma

    发明人： Youming Li ,  Jeffrey Birkmeyer ,  Takamichi Fujii ,  Takayuki Naono ,  Yoshikazu Hishinuma

    IPC分类号： C23C14/34

    CPC分类号： C23C14/345 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/3444

    摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.

    摘要翻译： 一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位 物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。