摘要:
Disclosed herein is an image processing device including: an acquisition section adapted to acquire coded data and control the output or recording of the coded data; a generation section adapted to generate image data; a coding section adapted to generate the coded data by coding the generated image data in response to an output request from the acquisition section; an output section adapted to output the generated coded data to the acquisition section; and a control section adapted to determine, based on the generated coded data, the sizes of vertical and horizontal synchronizing signals used to output the coded data to the acquisition section, notify the determined sizes to the acquisition section, and control the output section to output the coded data according to the vertical and horizontal synchronizing signals of the determined sizes after the notification.
摘要:
Disclosed herein is an image processing device including: an acquisition section adapted to acquire coded data and control the output or recording of the coded data; a generation section adapted to generate image data; a coding section adapted to generate the coded data by coding the generated image data in response to an output request from the acquisition section; an output section adapted to output the generated coded data to the acquisition section; and a control section adapted to determine, based on the generated coded data, the sizes of vertical and horizontal synchronizing signals used to output the coded data to the acquisition section, notify the determined sizes to the acquisition section, and control the output section to output the coded data according to the vertical and horizontal synchronizing signals of the determined sizes after the notification.
摘要:
A ceramic heater for a semiconductor substrate process includes a plate and a shaft. The plate includes a first base and a second base bonded to the first base. Defined on a mounting surface of the first base are: a first region having a surface contacting with a mounted substrate; a purge groove provided in the portion covered with the substrate and surrounds the first region; and a second region having a surface surrounding the purge groove. The first base has: an adsorber configured to adsorb the mounted substrate onto the surface of the first region; and multiple purge holes each penetrating from the bottom surface of the purge groove to the lower surface of the first base. The purge groove is supplied with a purge gas through the multiple purge holes. The surface of the second region is located lower than that of the first region.
摘要:
A ceramic heater for a semiconductor substrate process includes a plate and a shaft. The plate includes a first base and a second base bonded to the first base. Defined on a mounting surface of the first base are: a first region having a surface contacting with a mounted substrate; a purge groove provided in the portion covered with the substrate and surrounds the first region; and a second region having a surface surrounding the purge groove. The first base has: an adsorber configured to adsorb the mounted substrate onto the surface of the first region; and multiple purge holes each penetrating from the bottom surface of the purge groove to the lower surface of the first base. The purge groove is supplied with a purge gas through the multiple purge holes. The surface of the second region is located lower than that of the first region.
摘要:
After a row address and a column address are supplied to a dynamic RAM in response to a row address strobe signal and a column address strobe signal, respectively, a high impedance state is maintained for column address access time period after the fall timing of the column address strobe signal, thereafter data is outputted to a data bus, and the high impedance state of the data bus is quickly resumed after the rise timing of the column address strobe signal. If different column addresses of RAM at the same row address are successively read, data are read and outputted to the data bus in response to a change only in the column address strobe signal, and thereafter, even after the high impedance state of the data bus is quickly resumed, a data value is held by the data bus until the dynamic RAM outputs the data.