Electronic device for measuring light properties
    1.
    发明授权
    Electronic device for measuring light properties 失效
    用于测量光性能的电子设备

    公开(公告)号:US5610405A

    公开(公告)日:1997-03-11

    申请号:US216529

    申请日:1994-03-23

    摘要: An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first electromagnetic emission, (which may include visible light, ultraviolet light, gamma rays, or x-rays) having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with a second electromagnetic emission having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first emission can be known by measuring the induced photocurrent.

    摘要翻译: 一种电子设备,包括具有光电导性,能带隙和陷阱水平的材料。 该材料以多晶金刚石薄膜为代表。 该材料用具有小于材料的能带隙的光子能量的第一电磁发射(其可以包括可见光,紫外光,γ射线或X射线)照射。 然后,用具有大于材料的能带隙的光子能量的第二电磁发射来照射材料,从而引起光电流。 通过测量感应的光电流可以知道第一次发射的量。

    Photosensitive device and two frequency driving method thereof
    2.
    发明授权
    Photosensitive device and two frequency driving method thereof 失效
    感光装置及其两种频率驱动方法

    公开(公告)号:US5670777A

    公开(公告)日:1997-09-23

    申请号:US422544

    申请日:1995-04-12

    摘要: An electronic device utilizing a material having: a photoconductive effect; a trap level for trapping an excited carrier; and an energy band gap, the device comprising: a means for illuminating the material with a first light, the first light having a wavelength corresponding to an energy higher than the energy band gap of the material; a means for illuminating the material with a second light, the second light having a wavelength corresponding to an energy lower than the energy band gap of the material; a means for measuring the quantity of second light transmitted through the material; and a means for obtaining information on the first light illuminated to the material from the quantity of the transmitted second light.

    摘要翻译: 一种利用具有光导效应的材料的电子装置; 捕获激动的载体的陷阱水平; 和能带隙,所述装置包括:用第一光照射所述材料的装置,所述第一光具有对应于高于所述材料的能带隙的能量的波长; 用于用第二光照射材料的装置,所述第二光具有对应于低于所述材料的能带隙的能量的波长; 用于测量透过材料的第二光的量的装置; 以及用于从所发送的第二光的量获得关于材料照射的第一光的信息的装置。

    Optical memory apparatus using first and second illuminating lights for
writing and reading
    3.
    发明授权
    Optical memory apparatus using first and second illuminating lights for writing and reading 失效
    使用第一和第二照明灯进行写入和读取的光学存储装置

    公开(公告)号:US5608666A

    公开(公告)日:1997-03-04

    申请号:US380698

    申请日:1995-01-30

    摘要: An electronic apparatus comprising a material having a photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with a first light having photon energies greater than the energy bandgap of the material. Then, the material is illuminated with a second light having photon energies smaller than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.

    摘要翻译: 一种电子设备,包括具有光电导性,能带隙和陷阱水平的材料。 该材料以多晶金刚石薄膜为代表。 材料用具有大于材料的能带隙的光子能量的第一光照射。 然后,用具有小于材料的能带隙的光子能量的第二光照射材料,从而引起光电流。 通过测量感应的光电流可以知道第一光的量。

    Electronic device for reading information stored in a substance
    4.
    发明授权
    Electronic device for reading information stored in a substance 失效
    用于读取存储在物质中的信息的电子设备

    公开(公告)号:US5717215A

    公开(公告)日:1998-02-10

    申请号:US627422

    申请日:1996-04-04

    摘要: An electronic apparatus comprising a material having photoconductivity, an energy bandgap, and trap levels. The material is typified by a thin film of polycrystalline diamond. The material is illuminated with first light having photon energies smaller than the energy bandgap of the material. Then, the material is illuminated with second light having photon energies greater than the energy bandgap of the material to thereby induce a photocurrent. The amount of the first light can be known by measuring the induced photocurrent.

    摘要翻译: 一种电子设备,包括具有光电导性,能带隙和陷阱水平的材料。 该材料以多晶金刚石薄膜为代表。 该材料用具有小于材料的能带隙的光子能量的第一光照射。 然后,用具有大于材料的能带隙的光子能量的第二光照射材料,从而引起光电流。 通过测量感应的光电流可以知道第一光的量。

    Electric device and method of driving the same
    5.
    发明授权
    Electric device and method of driving the same 失效
    电气装置及其驱动方法

    公开(公告)号:US06550325B1

    公开(公告)日:2003-04-22

    申请号:US08141632

    申请日:1993-10-27

    IPC分类号: G01F168

    CPC分类号: G01F15/006 G01F1/688

    摘要: A thermistor layer made of platinum is formed on a thin diamond film. An amount of heat carried away from the diamond film by a fluid is detected as a change in the temperature of the thermistor layer. The rear side of the diamond film is kept in contact with the fluid to prevent the material of the thermistor from being corroded by the fluid. In another aspect of the invention, a heating element and a thermistor are formed on one surface of a thin diamond film. The other surface is kept in contact with a fluid. The diamond film is heated by the heating element in a quite short time of about 0.2 second. The resulting response characteristics of the diamond film are detected by the thermistor. The flow rate is calculated from the response characteristics.

    摘要翻译: 在金刚石薄膜上形成由铂制成的热敏电阻层。 作为热敏电阻层的温度的变化,检测由流体从金刚石膜带走的热量。 金刚石膜的后侧与流体保持接触,以防止热敏电阻的材料被流体腐蚀。 在本发明的另一方面,在薄金刚石膜的一个表面上形成加热元件和热敏电阻。 另一个表面与流体保持接触。 金刚石膜在相当短的时间内由加热元件加热约0.2秒。 通过热敏电阻检测所得到的金刚石膜的响应特性。 流量根据响应特性计算。

    Display device
    6.
    发明授权

    公开(公告)号:US08536577B2

    公开(公告)日:2013-09-17

    申请号:US13587958

    申请日:2012-08-17

    IPC分类号: H01L29/04

    摘要: The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

    Gas sensor control apparatus and method
    7.
    发明授权
    Gas sensor control apparatus and method 有权
    气体传感器控制装置及方法

    公开(公告)号:US08361306B2

    公开(公告)日:2013-01-29

    申请号:US12630423

    申请日:2009-12-03

    IPC分类号: G01N27/26 G01N27/417

    CPC分类号: G01N27/419

    摘要: There is provided a control apparatus for a gas sensor, which has a sensor element equipped with first and second oxygen pumping cells. The sensor control apparatus is configured to drive the first oxygen pumping cell to adjust the oxygen concentration of gas under measurement, drive the second oxygen pumping cell to produce a flow of electric current according to the amount of oxygen pumped out of the oxygen concentration adjusted gas by the second oxygen pumping cell, perform specific drive control to control the amount of oxygen pumped by the second oxygen pumping cell to a predetermined level after startup of the sensor element and before the application of the drive voltage between the electrodes of the second oxygen pumping cell.

    摘要翻译: 提供了一种用于气体传感器的控制装置,其具有配备有第一和第二氧气泵浦单元的传感器元件。 传感器控制装置被配置为驱动第一氧气泵送单元以调节测量气体的氧气浓度,驱动第二氧气泵送单元,根据从氧浓度调节气体中抽出的氧气的量产生电流 通过第二氧气泵送单元,执行特定的驱动控制,以在启动传感器元件之后并且在第二氧气泵送电极之间施加驱动电压之前,将第二氧气泵浦单元泵浦的氧气量控制到预定水平 细胞。

    SEMICONDUCTOR CIRCUIT FOR ELECTRO-OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR CIRCUIT FOR ELECTRO-OPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    电光器件用半导体电路及其制造方法

    公开(公告)号:US20120268681A1

    公开(公告)日:2012-10-25

    申请号:US13540143

    申请日:2012-07-02

    IPC分类号: G09G3/36 G02F1/136

    摘要: In a monolithic active matrix circuit formed on a substrate, the active regions of at least a part of the thin film transistors (TFTs) constituting the peripheral circuit for driving the matrix region are added with a metal element for promoting the crystallization of silicon at a concentration of 1×1016 to 5×1019 cm−3, no metal element is added to the active region of the TFTs for the matrix region. The channel forming regions of at least a part of the TFTs constituting the peripheral circuit and the channel forming regions of the TFTs for the matrix region are formed by a silicon semiconductor thin film having a monodomain structure.

    摘要翻译: 在形成在基板上的单片有源矩阵电路中,构成用于驱动矩阵区域的外围电路的至少一部分薄膜晶体管(TFT)的有源区域被添加有用于促进硅的结晶化的金属元素 浓度为1×1016〜5×1019cm-3,在基体区域的TFT的有源区域中不添加金属元素。 构成外围电路的至少一部分TFT的沟道形成区域和用于矩阵区域的TFT的沟道形成区域由具有单畴结构的硅半导体薄膜形成。