公开(公告)号：US06558233B1

公开(公告)日：2003-05-06

申请号：US09719564

申请日：2000-12-28

申请人： Takashi Matsuoka ,  Naotaka Toyama ,  Hideki Munakata ,  Hisashi Masumura

发明人： Takashi Matsuoka ,  Naotaka Toyama ,  Hideki Munakata ,  Hisashi Masumura

IPC分类号： B24B100

CPC分类号： H01L21/02052 ,  H01L21/02024

摘要： Provided are a wafer polishing method in which, in single side polishing, covering a wafer holding surface (one side surface) with a protective film, a wafer polishing surface (the other side surface) is polished, so that the wafer holding surface can be prevented from being etched and contaminated by a polishing agent; a wafer cleaning method in which the protective film that remains behind on the wafer holding surface after polishing can be efficiently removed, and a waste cleaning solution is easily treated; and a wafer protective film that sufficiently covers the wafer holding surface in polishing but is effectively removed in cleaning. In a wafer polishing method in which a wafer holding surface of one side surface of a wafer is held and a wafer polishing surface of the other side surface thereof is polished while dripping a polishing agent, the wafer polishing surface is polished while covering the wafer holding surface with a synthetic resin protective film of etching resistance against the polishing agent, good adhesiveness to the wafer and a property easy to peel off from the wafer after polishing.

摘要翻译： 提供一种晶片抛光方法，其中在单面抛光中，用保护膜覆盖晶片保持表面（一个侧表面），抛光晶片抛光表面（另一侧表面），使得晶片保持表面可以 防止被抛光剂蚀刻和污染; 可以有效地除去在抛光后保留在晶片保持面上的保护膜的晶片清洗方法，并且容易地处理废物清洁溶液; 以及晶片保护膜，其在抛光中充分地覆盖晶片保持表面，但在清洁中被有效地去除。 在晶片抛光方法中，晶片的一个侧表面的晶片保持表面和其另一侧表面的晶片抛光表面被抛光抛光剂，抛光晶片抛光表面，同时覆盖晶片保持 表面具有对抛光剂的耐蚀刻性的合成树脂保护膜，对晶片的良好粘合性和抛光后容易从晶片剥离的性质。

公开(公告)号：US6125554A

公开(公告)日：2000-10-03

申请号：US901166

申请日：1997-07-28

申请人： Hideki Munakata

发明人： Hideki Munakata

IPC分类号： F26B5/12 ,  H01L21/00 ,  H01L21/304 ,  F26B5/04

CPC分类号： H01L21/67034 ,  F26B5/12 ,  Y10S134/902

摘要： There are disclosed a method and an apparatus for drying a flat object. At least one flat object, whose surface is covered entirely with adhering water, is placed substantially vertically in at least one groove portion formed in a rack. The rack has a cavity portion formed therein, and the cavity portion communicates with the groove portion through at least one opening. The cavity portion of the rack is depressurized in order to suck water adhering to the surface of the flat object through the opening, thereby drying the flat object. It becomes possible to dry the flat object without causing problems which have been occurred in conventional drying methods.

摘要翻译： 公开了一种用于干燥扁平物体的方法和装置。 至少一个平坦的物体，其表面完全被粘附的水覆盖，基本垂直地放置在形成在齿条中的至少一个凹槽部分中。 齿条具有形成在其中的空腔部分，并且空腔部分通过至少一个开口与凹槽部分连通。 为了通过开口吸附附着在平坦物体的表面上的水分，使齿条的空腔部分减压，从而干燥平坦物体。 可以干燥扁平物体而不会导致在常规干燥方法中发生的问题。

公开(公告)号：US20080072926A1

公开(公告)日：2008-03-27

申请号：US11663921

申请日：2005-09-29

申请人： Hideki Munakata

发明人： Hideki Munakata

IPC分类号： B08B3/10 ,  H01L21/02

CPC分类号： H01L21/02052 ,  H01L21/76254 ,  H01L29/78603

摘要： A method for cleaning an SOI wafer having a silicon thin film on an insulator, wherein the SOI wafer is subjected to two-fluid cleaning in which two or more fluids are mixed and used for cleaning the wafer. Thereby, there is provided a method for cleaning an SOI wafer that sufficiently reduces impurity etc. adhered to the surface of the SOI wafer with inhibiting a decrease of film thickness and deterioration of haze level of the SOI layer of the SOI wafer as much as possible.

摘要翻译： 一种用于在绝缘体上清洁具有硅薄膜的SOI晶片的方法，其中对SOI晶片进行双流体清洗，其中混合两种或更多种流体并用于清洁晶片。 因此，提供了一种用于清除SOI晶片的方法，该SOI晶片能够尽可能地抑制SOI晶片的SOI层的薄膜厚度的降低和雾度水平的劣化，从而充分减少粘附在SOI晶片的表面上的杂质等 。

公开(公告)号：US06905731B2

公开(公告)日：2005-06-14

申请号：US09926173

申请日：2001-01-19

申请人： Hideki Munakata

发明人： Hideki Munakata

IPC分类号： H01L21/673 ,  B05D3/00 ,  B05D7/02 ,  B05D7/22 ,  B05D7/24 ,  C08J7/04

CPC分类号： H01L21/67366

摘要： There are provided a dust generation preventing structure of a wafer storage case and a process for preventing dust generation thereof, wherein dust generation is effectively prevented by blocking or suppressing free movement of particles constantly generated from a surface of a wafer storage case of a synthetic resin with a coating layer of a surfactant, and a wafer storing method using the wafer storage case. The wafer storage case of synthetic resin is used for housing wafers, and a surface of the wafer storage case is coated with a coating layer of a coating agent to prevent dust generation from the surface.

摘要翻译： 提供了晶片储存箱的防尘结构和防止其产生粉尘的方法，其中通过阻挡或抑制从合成树脂的晶片储存盒的表面恒定产生的颗粒的自由移动有效地防止了粉尘产生 具有表面活性剂的涂层和使用晶片储存盒的晶片存储方法。 合成树脂的晶片储存盒用于容纳晶片，并且晶片储存盒的表面涂覆有涂层剂的涂层以防止表面产生灰尘。

公开(公告)号：US5540245A

公开(公告)日：1996-07-30

申请号：US374188

申请日：1995-01-18

申请人： Hideki Munakata ,  Shiomi Hara

发明人： Hideki Munakata ,  Shiomi Hara

IPC分类号： B08B3/12 ,  H01L21/00 ,  H01L21/304 ,  B08B3/10

CPC分类号： H01L21/67028 ,  Y10S134/902

摘要： A wafer processing equipment of a single wafer transfer type comprising a wafer cleaning apparatus, a pure water cooling system, a pure water circulatory system, and a wafer drying apparatus for drying the cleaned wafer one by one, is disclosed. The cleaning apparatus comprises a pure water jet device for cleaning a wafer by jetting pure water to which ultrasonic wave is applied, against the main surface of the wafer, and a pure water collection tank for collecting the used water. The cooling system comprises a heat exchanger provided in the collection tank, for cooling the pure water in the collection tank. The circulatory system is for circulating pure water stored in the collection tank, through a filter for catching pollution or particles contained in the stored pure water. The drying apparatus is for drying the cleaned wafer one by one.

摘要翻译： 公开了一种晶片清洗装置，纯水冷却系统，纯水循环系统和晶片干燥装置的单晶片转印型晶片处理设备，用于逐一干燥被清洗的晶片。 清洁装置包括纯水喷射装置，用于通过将施加有超声波的纯水喷射到晶片的主表面上来清洁晶片，以及用于收集废水的纯水收集罐。 冷却系统包括设置在收集罐中的热交换器，用于冷却收集罐中的纯水。 循环系统用于循环储存在收集罐中的纯水，通过过滤器捕获存储的纯水中含有的污染物或颗粒。 干燥装置用于一个接一个地干燥清洁的晶片。