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9 条记录 (耗时 0.017 秒)

    Looper thread take-up apparatus
    1.
    发明授权
    Looper thread take-up apparatus 失效
    线圈卷取机

    公开(公告)号：US5732640A

    公开(公告)日：1998-03-31

    申请号：US912981

    申请日：1997-08-12

    申请人： Takashi Mizusaki ,  Ichiro Nishiwaki ,  Masato Okabe

    发明人： Takashi Mizusaki ,  Ichiro Nishiwaki ,  Masato Okabe

    IPC分类号： D05B63/02 ,  D05B63/00 ,  D05B49/04

    CPC分类号： D05B63/02

    摘要： A looper thread take-up apparatus which is mounted on a position away from a sewing machine bed, on the side facing a needle drop point of a leg portion for supporting the base end of a sewing machine arm on the machine bed with a thread take-up cam fixed on a rotating shaft which is projected from the side face of the leg portion and is interlocked with a sewing machine main shaft within the machine bed or with the upper shaft within the machine arm, where the looper thread take-up cam is rotated synchronously with the vertical motion of the needle at the nose of the machine arm, and with the advancing and retreating operations of a looper within the machine bed, thereby to make supplementary operations easier such as setting of the looper thread, adjusting of the loosening extent or the like without interference with the sewing operation.

    摘要翻译： 一种弯针线卷取装置，其安装在远离缝纫机床的位置上，在面向腿部的针落点的一侧，用于将机器床上的缝纫机臂的基端用螺纹支撑 凸轮固定在从腿部侧面突出的旋转轴上，并与机床内的缝纫机主轴或机械臂内的上轴互锁，其中弯针线卷取凸轮 与机器臂的前端的针的垂直运动同步旋转，并且在机床内的操作者的前进和后退操作，从而使得辅助操作更容易，例如设定弯针线，调整 松动程度等而不影响缝纫操作。

    Solid state image pick-up device having a number of static induction transistor image sensors
    4.
    发明授权
    Solid state image pick-up device having a number of static induction transistor image sensors 失效
    具有多个静电感应晶体管图像传感器的固态摄像装置

    公开(公告)号：US4891682A

    公开(公告)日：1990-01-02

    申请号：US557004

    申请日：1983-12-01

    申请人： Atsushi Yusa ,  Hidetoshi Yamada ,  Takashi Mizusaki ,  Jun-ichi Nishizawa ,  Takashige Tamamushi

    发明人： Atsushi Yusa ,  Hidetoshi Yamada ,  Takashi Mizusaki ,  Jun-ichi Nishizawa ,  Takashige Tamamushi

    IPC分类号： H01L27/146 ,  H04N5/30 ,  H04N5/335 ,  H04N5/353 ,  H04N5/355 ,  H04N5/369

    CPC分类号： H04N3/1506 ,  H01L27/14679 ,  H04N3/1556

    摘要： A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n.sup.- epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.

    摘要翻译： 具有以矩阵形式布置的多个静电感应晶体管图像传感器的固态图像拾取装置，每个静态感应图像传感器包括由连接到地电位的n +基板形成的漏极区域，由n形成的沟道区域 - 在衬底上生长的外延层，形成在外延层的表面中的环形p +栅极区，形成在由环形栅极区包围的外延层的表面的一部分中的n +源极区和p + 溢出漏极区域形成在栅极区域下方的衬底的表面中。 通过调整具有施加到溢出漏极区域的正电压的快门控制信号的持续时间，可以随意控制光载流子（即，电子流入栅极区域并存储在其中）的时间段，电子快门 功能可以实现。

    Ion selective electrode
    7.
    发明授权
    Ion selective electrode 失效
    离子选择电极

    公开(公告)号：US4182668A

    公开(公告)日：1980-01-08

    申请号：US950295

    申请日：1978-10-11

    申请人： Kiyozo Koshiishi ,  Takashi Mizusaki

    发明人： Kiyozo Koshiishi ,  Takashi Mizusaki

    IPC分类号： G01N27/333 ,  G01N27/30

    CPC分类号： G01N27/333

    摘要： An electrode sensitive to ions in solution comprises an outer tubular body having an opening at its one end, an inner tubular body secured to the other end of the outer tubular body and having an opening at its one end, a tip member threadingly engaged to one end of the outer tubular body and having an aperture at its one end, a first porous membrane provided between the tip member and one end of the outer tubular body to define a first reservoir together with the outer tubular body, a sealing member provided around the periphery of the first porous membrane, a second porous membrane provided at one end of the inner tubular body to define a second reservoir therein, an ion-exchanger liquid accommodated in the first reservoir and in contact with the first porous membrane directly, an internal reference solution accommodated in the second reservoir, and an inner reference electrode connected to a shielded cable extended through the other end of the outer tubular body and dipped in the internal reference solution.The tip member for holding the first porous membrane is formed by a metal tube and at least a portion of the metal tube in contact with a solution to be tested is coated with an insulating film.

    摘要翻译： 对溶液中的离子敏感的电极包括在其一端具有开口的外管状体，固定到外管状体的另一端并在其一端具有开口的内管状体， 外管状体的端部并且在其一端具有孔，第一多孔膜设置在末端构件和外管状体的一端之间，以与外管体一起限定第一储存器，密封构件围绕 第一多孔膜的周边，设置在内部管状体的一端以在其中限定第二储存器的第二多孔膜，容纳在第一储存器中并与第一多孔膜直接接触的离子交换液体，内部参考 容纳在第二储存器中的溶液和连接到穿过外管状体的另一端的屏蔽电缆的内参考电极，并浸入 三进制参考解决方案。 用于保持第一多孔膜的尖端构件由金属管形成，并且与待测试溶液接触的金属管的至少一部分涂覆有绝缘膜。

    Solid state image sensor comprising photoelectric converting film and reading-out transistor
    8.
    发明授权
    Solid state image sensor comprising photoelectric converting film and reading-out transistor 失效
    固态图像传感器包括光电转换膜和读出晶体管

    公开(公告)号：US4589003A

    公开(公告)日：1986-05-13

    申请号：US555987

    申请日：1983-11-29

    申请人： Hidetoshi Yamada ,  Atsushi Yusa ,  Takashi Mizusaki ,  Jun-ichi Nishizawa

    发明人： Hidetoshi Yamada ,  Atsushi Yusa ,  Takashi Mizusaki ,  Jun-ichi Nishizawa

    IPC分类号： H01L27/146 ,  H04N5/30 ,  H04N5/335 ,  H04N5/359 ,  H04N5/369 ,  H04N5/374 ,  H01L29/80

    CPC分类号： H01L27/14679 ,  H01L27/14665 ,  H04N5/30

    摘要： A solid state image sensor including a substrate, an epitaxial layer grown on the substrate, an opaque bottom electrode applied on the epitaxial layer, a photoconductor film deposited on the bottom electrode, a transparent surface electrode applied on the photoconductor film, a reading-out SIT formed in the epitaxial layer and a resetting MOS-FET also formed in the epitaxial layer. A gate diffusion region of the reading-out SIT is connected to the bottom electrode and a source region of resetting MOS-FET is also connected to the bottom electrode. A source electrode connected to the source region of the reading-out SIT is extended under the bottom surface, while an insulating layer is interposed therebetween to form a capacitance. Charge carriers stored in the gate region of the reading-out SIT can be read-out to derive a large output voltage due to the amplifying function of the reading-out SIT.

    摘要翻译： 一种固态图像传感器，包括衬底，在衬底上生长的外延层，施加在外延层上的不透明底部电极，沉积在底部电极上的光电导体膜，施加在感光膜上的透明表面电极，读出 在外延层中形成的SIT和还形成在外延层中的复位MOS-FET。 读出SIT的栅极扩散区域连接到底部电极，并且复位MOS-FET的源极区域也连接到底部电极。 连接到读出SIT的源极区域的源电极在底面下方延伸，同时隔着绝缘层形成电容。 可以读取存储在读出SIT的栅极区域中的电荷载流子，以便由于读出SIT的放大功能导致大的输出电压。