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    Gas barrier polyurethane resin
    2.
    发明授权
    Gas barrier polyurethane resin 有权
    防气聚氨酯树脂

    公开(公告)号：US06569533B1

    公开(公告)日：2003-05-27

    申请号：US09619639

    申请日：2000-07-19

    申请人： Takashi Uchida ,  Tsutomu Tawa ,  Hiroyuki Shiraki

    发明人： Takashi Uchida ,  Tsutomu Tawa ,  Hiroyuki Shiraki

    IPC分类号： B32B2706

    CPC分类号： C08J5/18 ,  C08G18/0823 ,  C08G18/12 ,  C08G18/3206 ,  C08G18/758 ,  C08G18/7642 ,  C08J2375/04 ,  Y10T428/31551 ,  Y10T428/31591 ,  Y10T428/31598 ,  Y10T428/31605 ,  Y10T428/31609 ,  C08G18/3228

    摘要： A polyurethane resin having a total concentration of the urethane group and the urea group of not less than 15% by weight is prepared by reacting a diisocyanate component (e.g., an aromatic diisocyanate) with a diol component (e.g., a C2-8alkylene glycol). The repeating unit of the polyurethane resin may contain a constitutive unit of an aromatic or alicyclic compound. The polyurethane resin may be shaped into a film for use as a gas barrier film. The film may be a gas barrier composite film composed of a base film layer and a resin layer at least comprising the polyurethane resin. The present invention provides a polyurethane resin excellent in gas barrier properties against water vapor, oxygen, aromatics, and others, and a film containing the same.

    摘要翻译： 通过使二异氰酸酯成分（例如芳香族二异氰酸酯）与二醇成分（例如C 2-8亚烷基二醇）反应，制备氨基甲酸酯基和脲基的总浓度为15重量％以上的聚氨酯树脂， 。 聚氨酯树脂的重复单元可以含有芳族或脂环族化合物的组成单元。 聚氨酯树脂可以成形为用作阻气膜的膜。 该膜可以是由至少包含聚氨酯树脂的基膜层和树脂层构成的阻气性复合膜。 本发明提供了对水蒸气，氧气，芳烃等的阻气性优异的聚氨酯树脂和含有该聚氨酯树脂的膜。

    Production method for silicon wafers and silicon wafer
    3.
    发明申请
    Production method for silicon wafers and silicon wafer 有权
    硅晶片和硅晶片的生产方法

    公开(公告)号：US20050130452A1

    公开(公告)日：2005-06-16

    申请号：US11053440

    申请日：2005-02-09

    申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki

    发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki

    IPC分类号： H01L21/322 ,  H01L21/324 ,  H01L21/66

    CPC分类号： H01L21/3225

    摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

    摘要翻译： 硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N 2分解温度的氮化物气体，使得 热退火在较低温度或短时间内进行，以抑制滑动的产生并提供令人满意的表面粗糙度。

    Urethane resins
    4.
    发明授权
    Urethane resins 失效
    聚氨酯树脂

    公开(公告)号：US4898922A

    公开(公告)日：1990-02-06

    申请号：US253863

    申请日：1988-10-05

    申请人： Hiroyuki Shiraki

    发明人： Hiroyuki Shiraki

    IPC分类号： C08G18/12 ,  G11B5/702

    CPC分类号： G11B5/7021 ,  C08G18/12

    摘要： Urethane resin having hydrophilic polar groups (mercapto groups) shows excellent dispersibility of magnetic powder when used as a binder for magnetic recording media. Magnetic recording media prepared by using the binder are excellent in surface-smoothness and durability. The mercapto groups contained in the magnetic layer react with isocyanate groups in the polyisocyanate to form thiourethane bonds to leave no hydrophilic polar groups, i.e., mercapto groups, and thus is excellent in moisture- and heat-resistance as well.The resin and the binding agent are advantageously used in the production of magnetic recording media, for example, magnetic tape, magnetic disc, etc.

    Method and apparatus for evaluating the quality of a semiconductor substrate
    5.
    发明授权
    Method and apparatus for evaluating the quality of a semiconductor substrate 有权
    用于评估半导体衬底的质量的方法和装置

    公开(公告)号：US06534774B2

    公开(公告)日：2003-03-18

    申请号：US09815208

    申请日：2001-03-22

    申请人： Takeshi Hasegawa ,  Terumi Ito ,  Hiroyuki Shiraki

    发明人： Takeshi Hasegawa ,  Terumi Ito ,  Hiroyuki Shiraki

    IPC分类号： G01N2164

    CPC分类号： G01N21/6489 ,  G01N21/6408

    摘要： A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time &tgr; of the semiconductor substrate from an expression “&tgr;=T/C”, where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.

    摘要翻译： 激光装置与半导体基板之间的第一斩波器以特定频率切断激励光，第一斩波器与半导体基板之间的第二斩波器以比第一斩波器高的可变频率对激发光进行斩波。 当半导体衬底间歇地用激发光照射时，由半导体衬底发射的光致发光被引入到单色器中。 控制器通过控制第二斩波器逐渐增加激发光的斩波频率，从光致发光光的平均强度的变化中获得光致发光光的衰减时间常数T，并计算半导体衬底的寿命τ 表达式“tau = T / C”，其中C是常数。 本发明的目的是通过定量地获得具有长寿命的半导体衬底的寿命来准确地评估半导体衬底中的杂质，缺陷等。

    Method for producing silicon wafer and silicon wafer
    6.
    发明授权
    Method for producing silicon wafer and silicon wafer 有权
    硅晶片和硅晶片的制造方法

    公开(公告)号：US07521381B2

    公开(公告)日：2009-04-21

    申请号：US10432861

    申请日：2001-11-28

    申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki

    发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki

    IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC分类号： H01L21/3225

    摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

    摘要翻译： 将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在 较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

    Aqueous emulsion composition and adherent composition
    7.
    发明授权
    Aqueous emulsion composition and adherent composition 失效

    公开(公告)号：US07026369B2

    公开(公告)日：2006-04-11

    申请号：US10199036

    申请日：2002-07-22

    申请人： Kenji Kuroda ,  Susumu Okatani ,  Hiroyuki Shiraki

    发明人： Kenji Kuroda ,  Susumu Okatani ,  Hiroyuki Shiraki

    IPC分类号： C08F2/50 ,  C08F2/16

    CPC分类号： C08F255/026 ,  C09J4/06 ,  Y10S524/923 ,  Y10S524/926

    摘要： To provide an aqueous emulsion composition which has high adhesion strength for a wide variety of materials including molded products and affords sufficient wettability even for the object to be adhesive bonded of low surface polarity so that it can develop sufficient adhesiveness and whose emulsion is stable so satisfactorily as to provide good mechanical stability and storage stability, and to provide an adherent composition comprising the aqueous emulsion composition, at least ethylene-vinyl acetate copolymer or modified resin thereof, photo polymerization initiator, and unsaturated ethylenic monomer are mixed and dissolved or dispersed, to prepare oil drop component, followed by emulsifying the oil drop component in water by using a surface-active agent, whereby an aqueous emulsion composition, in which micelles each encapsulating at least the ethylene-vinyl acetate copolymer or modified resin thereof, the photo polymerization initiator and unsaturated ethylenic monomer are dispersed in water, is prepared.

    Epitaxial wafer
    8.
    发明授权
    Epitaxial wafer 有权
    外延晶圆

    公开(公告)号：US06818197B2

    公开(公告)日：2004-11-16

    申请号：US10390941

    申请日：2003-03-18

    申请人： Kazuhiro Ikezawa ,  Ken Nakajima ,  Tamiya Karashima ,  Hiroyuki Shiraki

    发明人： Kazuhiro Ikezawa ,  Ken Nakajima ,  Tamiya Karashima ,  Hiroyuki Shiraki

    IPC分类号： C01B3326

    CPC分类号： C30B29/06 ,  C30B15/203 ,  H01L21/3225

    摘要： A wafer of the invention is a silicon wafer of 0.02 &OHgr;cm or less in resistivity for deposition of an epitaxial layer, and the number of crystal originated particles (COP) and the number of interstitial-type large dislocation loops (L/D) are respectively 0 to 10 per wafer. A wafer of the invention is an epitaxial wafer having an epitaxial layer being 0.1 &OHgr;cm or more in resistivity and 0.5 to 5 &mgr;m in thickness formed on this wafer by means of a CVD method. A wafer of the invention is OSF-free and hardly makes traces of COP and L/D appear on the surface of an epitaxial layer when the epitaxial layer is formed. By heat treatment in a semiconductor device manufacturing process after the epitaxial layer is formed, BMDs occur uniformly and highly in density in the wafer and a uniform IG effect can be obtained in the wafer.

    摘要翻译： 本发明的晶片是用于沉积外延层的电阻率为0.02Ω·cm以下的硅晶片，并且晶体起始粒子（COP）的数量和间隙型大位错环（L / D）的数量分别为 每片晶片为0〜10。 本发明的晶片是通过CVD方法在该晶片上形成的外延层的外延层的电阻率为0.1μΩ·m以上，厚度为0.5〜5μm的外延片。 当形成外延层时，本发明的晶片是无OSF的，并且几乎不产生COP和L / D的痕迹出现在外延层的表面上。 通过在形成外延层之后的半导体器件制造工艺中的热处理，BMD在晶片中的密度均匀且高度地发生，并且可以在晶片中获得均匀的IG效应。

    Method for evaluating the quality of a semiconductor substrate
    9.
    发明授权
    Method for evaluating the quality of a semiconductor substrate 有权
    用于评估半导体衬底的质量的方法

    公开(公告)号：US06693286B2

    公开(公告)日：2004-02-17

    申请号：US10299148

    申请日：2002-11-19

    申请人： Takeshi Hasegawa ,  Terumi Ito ,  Hiroyuki Shiraki

    发明人： Takeshi Hasegawa ,  Terumi Ito ,  Hiroyuki Shiraki

    IPC分类号： G01N2164

    CPC分类号： G01N21/6489 ,  G01N21/6408

    摘要： A first chopper between a laser device and a semiconductor substrate chops an excitation light at a specific frequency, and a second chopper between the first chopper and the semiconductor substrate chops the excitation light at a variable frequency higher than the first chopper. A photoluminescence light emitted by the semiconductor substrate when the semiconductor substrate is intermittently irradiated with the excitation light is introduced into a monochromator. A controller obtains the decay time constant T of the photoluminescence light from variation of the average intensity of the photoluminescence light when gradually increasing the chopping frequency of the excitation light by controlling the second chopper, and computes the life time &tgr; of the semiconductor substrate from an expression “&tgr;=T/C”, where C is a constant. An object of the invention is to accurately evaluate impurities, defects and the like in a semiconductor substrate by obtaining quantitatively the life time of the semiconductor substrate having a long life time.

    摘要翻译： 激光装置与半导体基板之间的第一斩波器以特定频率切断激励光，第一斩波器与半导体基板之间的第二斩波器以比第一斩波器高的可变频率对激发光进行斩波。 当半导体衬底间歇地用激发光照射时，由半导体衬底发射的光致发光被引入到单色器中。 控制器通过控制第二斩波器逐渐增加激发光的斩波频率，从光致发光光的平均强度的变化中获得光致发光光的衰减时间常数T，并计算半导体衬底的寿命τ 表达式“tau = T / C”，其中C是常数。 本发明的目的是通过定量地获得具有长寿命的半导体衬底的寿命来准确地评估半导体衬底中的杂质，缺陷等。