公开(公告)号：US07521381B2

公开(公告)日：2009-04-21

申请号：US10432861

申请日：2001-11-28

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/3225

摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

摘要翻译： 将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在 较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

公开(公告)号：US20050130452A1

公开(公告)日：2005-06-16

申请号：US11053440

申请日：2005-02-09

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki

IPC分类号： H01L21/322 ,  H01L21/324 ,  H01L21/66

CPC分类号： H01L21/3225

摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

摘要翻译： 硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N 2分解温度的氮化物气体，使得 热退火在较低温度或短时间内进行，以抑制滑动的产生并提供令人满意的表面粗糙度。

公开(公告)号：US08026182B2

公开(公告)日：2011-09-27

申请号：US12339118

申请日：2008-12-19

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

IPC分类号： H01L21/302

CPC分类号： F27D5/0037 ,  F27B17/0025 ,  H01L21/324 ,  H01L21/67109 ,  Y10T279/23

摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

摘要翻译： 在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。 此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度 彼此围绕中心。 利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

公开(公告)号：US07670965B2

公开(公告)日：2010-03-02

申请号：US11053440

申请日：2005-02-09

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/324 ,  H01L21/477 ,  H01L21/31

CPC分类号： H01L21/3225

摘要： A silicon wafer is thermal-annealed in an atmosphere to form new vacancies therein by thermal annealing and the atmosphere in the thermal annealing contains a nitride gas having a lower decomposition temperature than a decomposable temperature of N2 so that the thermal annealing is carried out at a lower temperature or for a short time to suppress generation of slip and to provide satisfactory surface roughness.

摘要翻译： 将硅晶片在大气中热退火以通过热退火形成新的空位，并且热退火中的气氛含有分解温度低于N2的可分解温度的氮化物气体，使得热退火在 较低的温度或短时间以抑制滑移的产生并提供令人满意的表面粗糙度。

公开(公告)号：US07481888B2

公开(公告)日：2009-01-27

申请号：US10551695

申请日：2004-03-30

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

IPC分类号： C23C16/00

CPC分类号： F27D5/0037 ,  F27B17/0025 ,  H01L21/324 ,  H01L21/67109 ,  Y10T279/23

摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

摘要翻译： 在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。 此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度 彼此围绕中心。 利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

公开(公告)号：US20060208434A1

公开(公告)日：2006-09-21

申请号：US10551695

申请日：2004-03-30

申请人： Yoshinobu Nakada ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

发明人： Yoshinobu Nakada ,  Hiroyuki Shiraki ,  Takeshi Hasegawa

IPC分类号： B23B31/28 ,  B29C71/00

CPC分类号： F27D5/0037 ,  F27B17/0025 ,  H01L21/324 ,  H01L21/67109 ,  Y10T279/23

摘要： In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all the support projections under the silicon wafer are positioned on a same circle within a region where a radial distance from the center is defined by 85 to 99.5% of the wafer radius, and the support arms form an angle of 120° with each other about the center. With this jig and method, free depth of a dislocation generated from a pin position can be controlled deeper than a device formation region, and a widest slip-free region where the surface is free from slip dislocation is obtained.

摘要翻译： 在这种用于硅晶片的热处理夹具和方法中，将硅晶片安装在设置在三个支撑臂上的支撑突起上进行热处理，其具有从支撑框架向中心突出的中间间隔。 此时，硅晶片下面的所有支撑突起都位于与中心的径向距离限定晶片半径的85至99.5％的区域内的相同的圆上，并且支撑臂形成120°的角度 彼此围绕中心。 利用这种夹具和方法，可以将从销位置产生的位错的自由深度控制得比装置形成区域更深，并且获得表面没有滑移位错的最宽的无滑动区域。

公开(公告)号：US20070075403A1

公开(公告)日：2007-04-05

申请号：US11529518

申请日：2006-09-29

申请人： Yukio Sakashita ,  Takamichi Fujii ,  Yoshinobu Nakada ,  Yoshikazu Hishinuma

发明人： Yukio Sakashita ,  Takamichi Fujii ,  Yoshinobu Nakada ,  Yoshikazu Hishinuma

IPC分类号： H01L29/06

CPC分类号： C30B29/06 ,  C30B11/00 ,  C30B28/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02518 ,  H01L39/2454 ,  H01L41/0815 ,  H01L41/314

摘要： The functional structural element includes: a substrate member which has a surface made of directionally solidified silicon; and a functional structural body which is made of a functional material and is formed on the surface of the substrate member.

摘要翻译： 功能结构元件包括：具有由定向凝固硅构成的表面的基板构件; 以及功能性结构体，其由功能材料制成并形成在所述基板部件的表面上。

公开(公告)号：US06299682B1

公开(公告)日：2001-10-09

申请号：US09658488

申请日：2000-09-08

申请人： Saburo Wakita ,  Akira Mitsuhashi ,  Yoshinobu Nakada ,  Jun-ichi Sasaki ,  Yuhji Ishiwari

发明人： Saburo Wakita ,  Akira Mitsuhashi ,  Yoshinobu Nakada ,  Jun-ichi Sasaki ,  Yuhji Ishiwari

IPC分类号： C30B1314

CPC分类号： C30B29/06 ,  C30B11/003 ,  Y10S164/06

摘要： A method for producing a silicon ingot having a directional solidification structure comprising the steps of: placing a silicon raw material into a crucible of a melting device constructed by mounting a chill plate on an underfloor heater, mounting a crucible with a large cross-sectional area on the chill plate, providing an overhead heater over the crucible, and surrounding the circumference of the crucible with a heat insulator; heat-melting the silicon raw material by flowing an electric current through the underfloor heater and overhead heater; chilling the bottom of the crucible by halting the electric current through the underfloor heater after the silicon raw material has been completely melted to form a molten silicon; chilling the bottom of the crucible by flowing an inert gas through the chill plate; and intermittently or continuously lowering the temperature of the overhead heater by intermittently or continuously decreasing the electric current through the overhead heater, and an apparatus for producing the silicon ingot.

摘要翻译： 一种制造具有定向凝固结构的硅锭的方法，包括以下步骤：将硅原料放入通过将冷却板安装在地板下加热器上构成的熔化装置的坩埚中，安装具有大横截面积的坩埚 在冷却板上，在坩埚上方提供顶部加热器，并用绝热体围绕坩埚的周边; 通过使电流流过地板加热器和塔顶加热器来热熔硅原料; 在硅原料完全熔化之后，通过停止通过地板下加热器的电流来冷却坩埚的底部以形成熔融硅; 通过使惰性气体流过冷却板来冷却坩埚的底部; 以及通过间歇地或连续地减少通过塔顶加热器的电流来间歇地或连续地降低塔顶加热器的温度，以及用于生产硅锭的装置。

公开(公告)号：US20060148249A1

公开(公告)日：2006-07-06

申请号：US10525442

申请日：2003-08-28

申请人： So Bae ,  Yoshinobu Nakada ,  Kenichi Kaneko

发明人： So Bae ,  Yoshinobu Nakada ,  Kenichi Kaneko

IPC分类号： H01L21/44

CPC分类号： H01L21/324 ,  H01L21/02046

摘要： A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided. The method includes, when annealing a silicon wafer having a surface on which a native oxide film has formed and boron of environmental origin or from chemical treatment prior to annealing has deposited, steps of carrying out temperature heat-up in a mixed gas atmosphere having a mixing ratio of hydrogen gas to inert gas of 5% to 100% so as to remove the boron-containing native oxide film, followed by annealing in an inert gas atmosphere.

摘要翻译： 防止硅晶片在表面附近增加硼浓度并且在退火晶片的表面与硅体之间不产生硼浓度的差异以消除由退火处理引起的硅晶片中的硼污染的方法是 提供。 该方法包括：在退火之后退火具有形成有自然氧化膜的表面和环境来源的硼或退火之前的化学处理的硅晶片退火时，在具有 氢气与惰性气体的混合比为5％〜100％，除去含硼自然氧化膜，然后在惰性气体气氛中进行退火。

公开(公告)号：US06663708B1

公开(公告)日：2003-12-16

申请号：US09667885

申请日：2000-09-22

申请人： Etsuro Morita ,  Takaaki Shiota ,  Yoshihisa Nonogaki ,  Yoshinobu Nakada ,  Hisashi Furuya ,  Hiroshi Koya ,  Jun Furukawa ,  Hideo Tanaka ,  Yuji Nakata

发明人： Etsuro Morita ,  Takaaki Shiota ,  Yoshihisa Nonogaki ,  Yoshinobu Nakada ,  Hisashi Furuya ,  Hiroshi Koya ,  Jun Furukawa ,  Hideo Tanaka ,  Yuji Nakata

IPC分类号： C30B3302

CPC分类号： C30B33/00 ,  C30B29/06 ,  H01L21/3225

摘要： An ingot is manufactured by pulling it up such that V/Ga and V/Gb become 0.23 to 0.50 mm2/minute ° C., respectively, where V (mm/minute) is a pulling-up speed, and Ga (° C./mm) is and axial temperature gradient at the center of the ingot and Gb (° C./mm) is an axial temperature gradient at the edge of the ingot at temperatures in a range of 1,300° C. to a melting pointy of silicon. A wafer obtained by slicing the ingot is heat treated in a reductive atmosphere at temperature in a renge of 1,050° C. to 1,220° C. for 30 to 150 minutes. A silicon wafer free of OSF's, free of COP's, and substantially free of contamination such as Fe and of occurence of slip, is obtained.

摘要翻译： 通过将其拉起来使得V / Ga和V / Gb分别变为0.23至0.50mm 2 /分钟℃来制造锭，其中V（mm /分钟）是拉升速度，Ga（ °C / mm）是在晶锭中心的轴向温度梯度，Gb（℃/ mm）是在锭的边缘处的温度在1300℃的温度下的轴向温度梯度到熔化 硅尖锐 通过将锭切片获得的晶片在1050℃至1220℃的温度下在还原气氛中热处理30至150分钟。 没有OSF的硅晶片没有COP，并且基本上没有诸如Fe的污染和滑动的发生。