摘要:
A dielectric resonator has a metallic casing having an opening, a metallic cover which covers the opening, and a dielectric resonance element having a pair of flat surfaces formed opposite from each other, one of the pair of flat surfaces being brought into contact with a bottom portion of the casing. At least one of the cover and the bottom portion has a resilient portion which supports the dielectric resonance element and presses one of the pair of flat surfaces by a biasing force so as to follow expansion or contraction of the dielectric resonance element due to a change in temperature. The biasing force applied from the resilient portion is obtained by warping of a portion of the cover or a portion of the bottom portion that one of the pair of flat surfaces or an edge portion of the flat surface contacts.
摘要:
A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a and 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.
摘要:
A dielectric resonator has a metallic casing having an opening, a metallic cover which covers the opening, and a dielectric resonance element having a pair of flat surfaces formed opposite from each other, one of the pair of flat surfaces being brought into contact with a bottom portion of the casing. At least one of the cover and the bottom portion has a resilient portion which supports the dielectric resonance element and presses one of the pair of flat surfaces by a biasing force so as to follow expansion or contraction of the dielectric resonance element due to a change in temperature. The biasing force applied from the resilient portion is obtained by warping of a portion of the cover or a portion of the bottom portion that one of the pair of flat surfaces or an edge portion of the flat surface contacts.
摘要:
A small in-band-flat-group-delay type dielectric filter having low-loss characteristics with a small amplitude deviation and uniform-group-delay frequency characteristics is obtained, which enables broad-band characteristics to be obtained easily. The in-band-flat-group-delay type dielectric filter includes a plurality of dielectric coaxial resonators, a coupling circuit comprising a combination of reactive elements, with which the dielectric coaxial resonators are coupled to one another, and input/output terminals connected to ends of the coupling circuit. The dielectric coaxial resonators coupled to the input/output terminals are allowed to have a different characteristic impedance from that of the inter-stage dielectric coaxial resonators.
摘要:
A series piezoelectric resonator is connected in series between an input terminal and an output terminal. A first electrode of a first parallel piezoelectric resonator is connected to a connection point between the input terminal and the series piezoelectric resonator, and a second electrode of the first parallel piezoelectric resonator is connected to a first terminal of a first inductor. A first electrode of a second parallel piezoelectric resonator is connected to a connection point between the series piezoelectric resonator and the output terminal, and a second electrode of the second parallel piezoelectric resonator is connected to a first terminal of a second inductor. Second terminals of the first and second inductors are grounded. An additional piezoelectric resonator is connected between the second electrode of the first parallel piezoelectric resonator and the second electrode of the second parallel piezoelectric resonator.
摘要:
A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a, 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.
摘要:
A small in-band-flat-group-delay type dielectric filter having low-loss characteristics with a small amplitude deviation and uniform-group-delay frequency characteristics is obtained, which enables broad-band characteristics to be obtained easily. The in-band-flat-group-delay type dielectric filter includes a plurality of dielectric coaxial resonators, a coupling circuit comprising a combination of reactive elements, with which the dielectric coaxial resonators are coupled to one another, and input/output terminals connected to ends of the coupling circuit. The dielectric coaxial resonators coupled to the input/output terminals are allowed to have a different characteristic impedance from that of the inter-stage dielectric coaxial resonators.
摘要:
A small in-band-flat-group-delay type dielectric filter having low-loss characteristics with a small amplitude deviation and uniform-group-delay frequency characteristics is obtained, which enables broad-band characteristics to be obtained easily. The in-band-flat-group-delay type dielectric filter includes a plurality of dielectric coaxial resonators, a coupling circuit comprising a combination of reactive elements, with which the dielectric coaxial resonators are coupled to one another, and input/output terminals connected to ends of the coupling circuit. The dielectric coaxial resonators coupled to the input/output terminals are allowed to have a different characteristic impedance from that of the inter-stage dielectric coaxial resonators.
摘要:
A series piezoelectric resonator 11 is connected in series between an input terminal 15a and an output terminal 15b. A first electrode of a parallel piezoelectric resonator 12a is connected to a connection point between the input terminal 15a and the series piezoelectric resonator 11, and a second electrode of the parallel piezoelectric resonator 12a is connected to a first terminal of an inductor 13a. A first electrode of a parallel piezoelectric resonator 12b is connected to a connection point between the series piezoelectric resonator 11 and the output terminal 15b, and a second electrode of the parallel piezoelectric resonator 12b is connected to a first terminal of an inductor 13b. Second terminals of the inductors 13a and 13b are grounded. An additional piezoelectric resonator 14 is connected between the second electrode of the parallel piezoelectric resonator 12a and the second electrode of the parallel piezoelectric resonator 12b.
摘要:
An RF device includes a first substrate having a lower relative dielectric constant, a first RF circuit for a lower frequency band provided in the first substrate, a second substrate having a higher relative dielectric constant larger than the lower relative dielectric constant, and a second RF circuit for a higher frequency band having a part of the second RF circuit sandwiched between the first substrate and the second substrate. The first RF circuit and the second RF circuit are connected to each other and the second substrate is partially overlaid on the first substrate. A semiconductor device or passive device is provided on a region in the surface of the first substrate on which the second substrate is not overlaid, and a multilayered wiring pattern made of copper or silver is formed in the first substrate to form the first RF circuit.