公开(公告)号：US07728353B2

公开(公告)日：2010-06-01

申请号：US11392549

申请日：2006-03-30

申请人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

发明人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

IPC分类号： H01L29/20 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66318

摘要： A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.

摘要翻译： 半导体器件包括在衬底上具有开口的掩模层，在衬底上选择性地形成有用作掩模的掩模层的GaN基半导体层，栅电极以及形成在GaN上的源电极或发射极 以及连接在第一半导体层的面对GaN基半导体层或第一半导体层的相对侧的表面上的漏电极或集电极。

公开(公告)号：US20060220065A1

公开(公告)日：2006-10-05

申请号：US11392516

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.

摘要翻译： 半导体器件包括衬底，在衬底上形成的GaN基半导体层，嵌入GaN基半导体层中的栅电极，形成在栅电极两侧的源电极和漏电极，第一凹部 形成在栅电极和源电极之间，以及形成在栅电极和漏电极之间的第二凹部。 第一凹部的深度比第二凹部的深度深。

公开(公告)号：US20060220042A1

公开(公告)日：2006-10-05

申请号：US11392549

申请日：2006-03-30

申请人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

发明人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

IPC分类号： H01L33/00

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66318

摘要： A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.

摘要翻译： 半导体器件包括在衬底上具有开口的掩模层，在衬底上选择性地形成有用作掩模的掩模层的GaN基半导体层，栅电极以及形成在GaN上的源电极或发射极 以及连接在第一半导体层的面对GaN基半导体层或第一半导体层的相对侧的表面上的漏电极或集电极。

公开(公告)号：US08044433B2

公开(公告)日：2011-10-25

申请号：US11392516

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.

摘要翻译： 半导体器件包括衬底，在衬底上形成的GaN基半导体层，嵌入GaN基半导体层中的栅电极，形成在栅电极两侧的源电极和漏电极，第一凹部 形成在栅电极和源电极之间，以及形成在栅电极和漏电极之间的第二凹部。 第一凹部的深度比第二凹部的深度深。

公开(公告)号：US07723751B2

公开(公告)日：2010-05-25

申请号：US11392517

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L29/38 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/267 ,  H01L29/0646 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7397 ,  H01L29/7783 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/802

摘要： A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.

摘要翻译： 半导体器件包括衬底，在衬底上形成的SiC漂移层，形成在SiC漂移层上并包括沟道层的GaN基半导体层，形成在GaN基半导体上的源电极和栅电极 形成在SiC漂移层的部分并且位于源极和栅极电极下方的电流阻挡区，以及形成在跨越SiC层的与GaN基半导体层相对的表面上的漏电极。

公开(公告)号：US07592647B2

公开(公告)日：2009-09-22

申请号：US11392639

申请日：2006-03-30

申请人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

发明人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

IPC分类号： H01L29/38 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.

摘要翻译： 半导体器件包括形成在基板上的GaN基半导体层和开口区域，形成在开口区域的内表面上的电子传导层，具有比电子传导层更大的带隙的电子供给层 并且形成在设置在开口区域的内表面上的电子传导层上，以及形成在开口区域中的电子供给层的侧表面上的栅电极。 源极电极形成在GaN基半导体层上。 漏电极连接到与源电极相对的GaN基半导体层的表面。

公开(公告)号：US20060220060A1

公开(公告)日：2006-10-05

申请号：US11392639

申请日：2006-03-30

申请人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

发明人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.

公开(公告)号：US20060219997A1

公开(公告)日：2006-10-05

申请号：US11392517

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L31/00 ,  H01L29/06

CPC分类号： H01L29/267 ,  H01L29/0646 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7397 ,  H01L29/7783 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/802

摘要： A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.

摘要翻译： 半导体器件包括衬底，在衬底上形成的SiC漂移层，形成在SiC漂移层上并包括沟道层的GaN基半导体层，形成在GaN基半导体上的源电极和栅电极 形成在SiC漂移层的部分并且位于源极和栅极电极下方的电流阻挡区，以及形成在跨越SiC层的与GaN基半导体层相对的表面上的漏电极。

公开(公告)号：US06664610B2

公开(公告)日：2003-12-16

申请号：US10268097

申请日：2002-10-10

申请人： Takeshi Kawasaki ,  Kenji Kotani ,  Masaki Yanagisawa ,  Seiji Yaegashi ,  Hiroshi Yano

发明人： Takeshi Kawasaki ,  Kenji Kotani ,  Masaki Yanagisawa ,  Seiji Yaegashi ,  Hiroshi Yano

IPC分类号： H01L27082

CPC分类号： H01L29/66318 ,  H01L29/045 ,  H01L29/0692 ,  H01L29/7371

摘要： This invention provides a new configuration and manufacturing method of the hetero-junction bipolar transistor. According to the invention, the HBT comprises a semi-insulating InP substrate, a buffer layer on the substrate, a sub-collector layer, a collector layer, a base layer, an emitter layer, and an emitter contact layer These layers are sequentially grown on the buffer layer. Since a pre-processing of forming two depressions in the sub-collector layer before growing the collector layer, the top surface of the emitter layer becomes planar surface. This results on the reduction of pits induced in the etching of the emitter contact layer, thus enhances the reliability and the high frequency performance of the HBT.

公开(公告)号：US20060214188A1

公开(公告)日：2006-09-28

申请号：US11385749

申请日：2006-03-22

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Hiroshi Yano

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Hiroshi Yano

IPC分类号： H01L29/739

CPC分类号： H01L29/7781 ,  H01L29/1033 ,  H01L29/2003

摘要： A semiconductor device includes, an AlGaN electron supply layer having a [000-1] crystalline orientation in a thickness direction to a substrate plane, a GaN electron traveling layer formed on the AlGaN electron supply layer, a gate electrode formed above the GaN electron traveling layer, and a source electrode and a drain electrode between which the gate electrode is located, the source and drain electrode being formed on the GaN electron traveling layer.