公开(公告)号：US20060220042A1

公开(公告)日：2006-10-05

申请号：US11392549

申请日：2006-03-30

申请人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

发明人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

IPC分类号： H01L33/00

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66318

摘要： A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.

摘要翻译： 半导体器件包括在衬底上具有开口的掩模层，在衬底上选择性地形成有用作掩模的掩模层的GaN基半导体层，栅电极以及形成在GaN上的源电极或发射极 以及连接在第一半导体层的面对GaN基半导体层或第一半导体层的相对侧的表面上的漏电极或集电极。

公开(公告)号：US07728353B2

公开(公告)日：2010-06-01

申请号：US11392549

申请日：2006-03-30

申请人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

发明人： Seiji Yaegashi ,  Takeshi Kawasaki ,  Ken Nakata

IPC分类号： H01L29/20 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/66462 ,  H01L21/28575 ,  H01L21/28581 ,  H01L29/2003 ,  H01L29/66318

摘要： A semiconductor device includes a mask layer having openings on a substrate, a GaN-based semiconductor layer selectively formed on the substrate with the mask layer that serves as a mask, a gate electrode and either a source electrode or an emitter electrode formed on the GaN-based semiconductor layer, and a drain electrode or a collector electrode connected on a surface of the first semiconductor layer that faces the GaN-based semiconductor layer or an opposite side of the first semiconductor layer.

摘要翻译： 半导体器件包括在衬底上具有开口的掩模层，在衬底上选择性地形成有用作掩模的掩模层的GaN基半导体层，栅电极以及形成在GaN上的源电极或发射极 以及连接在第一半导体层的面对GaN基半导体层或第一半导体层的相对侧的表面上的漏电极或集电极。

公开(公告)号：US20060220065A1

公开(公告)日：2006-10-05

申请号：US11392516

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.

摘要翻译： 半导体器件包括衬底，在衬底上形成的GaN基半导体层，嵌入GaN基半导体层中的栅电极，形成在栅电极两侧的源电极和漏电极，第一凹部 形成在栅电极和源电极之间，以及形成在栅电极和漏电极之间的第二凹部。 第一凹部的深度比第二凹部的深度深。

公开(公告)号：US08044433B2

公开(公告)日：2011-10-25

申请号：US11392516

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L29/66 ,  H01L21/02

CPC分类号： H01L29/7787 ,  H01L21/28587 ,  H01L29/045 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462

摘要： A semiconductor device includes a substrate, a GaN-based semiconductor layer formed on the substrate, a gate electrode embedded in the GaN-based semiconductor layer, a source electrode and a drain electrode formed on both sides of the gate electrode, a first recess portion formed between the gate electrode and the source electrode, and a second recess portion formed between the gate electrode and the drain electrode. The first recess portion has a depth deeper than that of the second recess portion.

摘要翻译： 半导体器件包括衬底，在衬底上形成的GaN基半导体层，嵌入GaN基半导体层中的栅电极，形成在栅电极两侧的源电极和漏电极，第一凹部 形成在栅电极和源电极之间，以及形成在栅电极和漏电极之间的第二凹部。 第一凹部的深度比第二凹部的深度深。

公开(公告)号：US07723751B2

公开(公告)日：2010-05-25

申请号：US11392517

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L29/38 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/267 ,  H01L29/0646 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7397 ,  H01L29/7783 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/802

摘要： A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.

摘要翻译： 半导体器件包括衬底，在衬底上形成的SiC漂移层，形成在SiC漂移层上并包括沟道层的GaN基半导体层，形成在GaN基半导体上的源电极和栅电极 形成在SiC漂移层的部分并且位于源极和栅极电极下方的电流阻挡区，以及形成在跨越SiC层的与GaN基半导体层相对的表面上的漏电极。

公开(公告)号：US07592647B2

公开(公告)日：2009-09-22

申请号：US11392639

申请日：2006-03-30

申请人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

发明人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

IPC分类号： H01L29/38 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.

摘要翻译： 半导体器件包括形成在基板上的GaN基半导体层和开口区域，形成在开口区域的内表面上的电子传导层，具有比电子传导层更大的带隙的电子供给层 并且形成在设置在开口区域的内表面上的电子传导层上，以及形成在开口区域中的电子供给层的侧表面上的栅电极。 源极电极形成在GaN基半导体层上。 漏电极连接到与源电极相对的GaN基半导体层的表面。

公开(公告)号：US20060220060A1

公开(公告)日：2006-10-05

申请号：US11392639

申请日：2006-03-30

申请人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

发明人： Ken Nakata ,  Takeshi Kawasaki ,  Seiji Yaegashi

IPC分类号： H01L31/00

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.

公开(公告)号：US20060219997A1

公开(公告)日：2006-10-05

申请号：US11392517

申请日：2006-03-30

申请人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

发明人： Takeshi Kawasaki ,  Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L31/00 ,  H01L29/06

CPC分类号： H01L29/267 ,  H01L29/0646 ,  H01L29/1029 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7397 ,  H01L29/7783 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/802

摘要： A semiconductor device includes a substrate, a SiC drift layer formed above the substrate, a GaN-based semiconductor layer that is formed on the SiC drift layer and includes a channel layer, a source electrode and a gate electrode formed on the GaN-based semiconductor layer, current blocking regions formed in portions of the SiC drift layer and located below the source and gate electrodes, and a drain electrode formed on a surface that opposes the GaN-based semiconductor layer across the SiC layer.

摘要翻译： 半导体器件包括衬底，在衬底上形成的SiC漂移层，形成在SiC漂移层上并包括沟道层的GaN基半导体层，形成在GaN基半导体上的源电极和栅电极 形成在SiC漂移层的部分并且位于源极和栅极电极下方的电流阻挡区，以及形成在跨越SiC层的与GaN基半导体层相对的表面上的漏电极。

公开(公告)号：US20100159656A1

公开(公告)日：2010-06-24

申请号：US12640347

申请日：2009-12-17

申请人： Ken Nakata ,  Seiji Yaegashi

发明人： Ken Nakata ,  Seiji Yaegashi

IPC分类号： H01L21/336

CPC分类号： H01L29/7789 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7787 ,  H01L29/7788

摘要： A method for fabricating a semiconductor device includes: forming a GaN-based semiconductor layer on a substrate; forming a gate insulating film of aluminum oxide on the GaN-based semiconductor layer at a temperature equal to or lower than 450° C.; forming a protection film on an upper surface of the gate insulating film; performing a process with an alkaline solution in a state in which the upper surface of the gate insulating film is covered with the protection film; and forming a gate electrode on the gate insulating film.

摘要翻译： 一种制造半导体器件的方法包括：在衬底上形成GaN基半导体层; 在等于或低于450℃的温度下在GaN基半导体层上形成氧化铝的栅极绝缘膜; 在所述栅极绝缘膜的上表面上形成保护膜; 在栅极绝缘膜的上表面被保护膜覆盖的状态下用碱性溶液进行处理; 以及在所述栅极绝缘膜上形成栅电极。

公开(公告)号：US08227810B2

公开(公告)日：2012-07-24

申请号：US13126569

申请日：2010-07-09

申请人： Masaya Okada ,  Makoto Kiyama ,  Seiji Yaegashi ,  Ken Nakata

发明人： Masaya Okada ,  Makoto Kiyama ,  Seiji Yaegashi ,  Ken Nakata

IPC分类号： H01L29/15

CPC分类号： H01L29/8725 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0727 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/8128 ,  H01L29/872

摘要： There are provided a semiconductor device that includes a bypass protection unit against surge voltage or the like, achieves good withstand voltage characteristics and low on-resistance (low On-state voltage), has a simple structure, and is used for large-current purpose and a method for producing the semiconductor device.In the present invention, the semiconductor device includes an n+-type GaN substrate 1 having a GaN layer that is in ohmic contact with a supporting substrate, a FET having an n−-type GaN drift layer 2 in a first region R1, and an SBD having an anode electrode in a second region R2, the anode electrode being in Schottky contact with the n−-type GaN drift layer 2. The FET and the SBD are arranged in parallel. A drain electrode D of the FET and a cathode electrode C of the SBD are formed on the back of the n+-type GaN substrate 1.

摘要翻译： 提供了一种具有抗浪涌电压等的旁路保护单元的半导体器件，具有良好的耐压特性和低导通电阻（低导通电压），结构简单，用于大电流目的 以及半导体装置的制造方法。 在本发明中，半导体器件包括具有与支撑衬底欧姆接触的GaN层的n +型GaN衬底1，在第一区域R1中具有n型GaN漂移层2的FET和 SBD在第二区域R2中具有阳极电极，阳极与n型GaN漂移层2肖特基接触.FET和SBD平行布置。 FET的漏电极D和SBD的阴极电极C形成在n +型GaN衬底1的背面。