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    Magnetic sensor element using highly-oriented diamond film and magnetic detector
    1.
    发明授权
    Magnetic sensor element using highly-oriented diamond film and magnetic detector 失效
    磁性传感元件采用高取向金刚石膜和磁性探测器

    公开(公告)号：US5424561A

    公开(公告)日：1995-06-13

    申请号：US305791

    申请日：1994-09-08

    申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Koji Kobashi ,  Bradley A. Fox ,  Jesko A. von Windheim ,  David L. Dreifus ,  Brian R. Stoner

    发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Koji Kobashi ,  Bradley A. Fox ,  Jesko A. von Windheim ,  David L. Dreifus ,  Brian R. Stoner

    IPC分类号： G01R33/07 ,  C30B25/02 ,  C30B29/04 ,  H01L43/06 ,  H01L43/10 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/065

    摘要： A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.

    摘要翻译： 使用高取向金刚石膜的磁传感器元件包括磁检测部，至少一对主电流电极，用于使主电流流动并在磁检测部产生霍尔电动势，以及检测电极，用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成，其中至少90％由（100）或（111）晶面构成。 在相邻的晶面之间，表示晶面取向的欧拉角{α，β，γ}的差异{DELTA alpha，DELTAβ，DELTA gamma}同时满足以下关系： DELTA alpha |

    Wide bandgap semiconductor device including lightly doped active region
    2.
    发明授权
    Wide bandgap semiconductor device including lightly doped active region 失效
    宽带隙半导体器件包括轻掺杂的有源区

    公开(公告)号：US5536953A

    公开(公告)日：1996-07-16

    申请号：US208018

    申请日：1994-03-08

    申请人： David L. Dreifus ,  Bradley A. Fox ,  Jesko A. von Windheim

    发明人： David L. Dreifus ,  Bradley A. Fox ,  Jesko A. von Windheim

    IPC分类号： H01L29/10 ,  H01L29/167 ,  H01L29/786 ,  H01L31/103 ,  H01L33/02 ,  H01L31/0312 ,  H01L29/82

    CPC分类号： H01L33/025 ,  H01L29/1029 ,  H01L29/1058 ,  H01L29/167 ,  H01L29/78684 ,  H01L31/103

    摘要： A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides. By lightly doping the active region to a level below 1.times.10.sup.16 cm.sup.-3, relatively uniform device characteristics can be achieved over a wide temperature range extending from room temperature to 1000 K and above.

    摘要翻译： 用于在相当宽的温度范围内提供稳定操作的半导体器件包括宽带隙半导体有源区，其具有第一导电类型的有意掺杂物和第二导电类型的无意杂质，其共同在室温下产生游离载流子浓度。 有源区域中的有意掺杂剂的浓度优选小于1×10 16 cm -3，并且非故意杂质的浓度小于有意掺杂剂浓度的0.1倍，使得有意掺杂剂浓度将小于自由载流子浓度的1000倍 在室温下。 有意掺杂剂浓度基本上供应活性区域中所有主要的自由载体。 宽带隙半导体活性区域优选为金刚石，IV-IV碳化物，III-V族氮化物和磷化物以及II-VI族硒化物，碲化物，氧化物和硫化物。 通过将有源区轻轻掺杂到1×1016cm-3以下的水平，可以在从室温延伸到1000K以上的宽的温度范围内实现相对均匀的器件特性。

    Highly-oriented diamond film heat dissipating substrate
    3.
    发明授权
    Highly-oriented diamond film heat dissipating substrate 失效
    高取向金刚石薄膜散热基板

    公开(公告)号：US5529846A

    公开(公告)日：1996-06-25

    申请号：US468450

    申请日：1995-06-06

    申请人： Kazushi Hayashi ,  Koji Kobashi ,  Jesko A. von Windheim

    发明人： Kazushi Hayashi ,  Koji Kobashi ,  Jesko A. von Windheim

    IPC分类号： C30B29/04 ,  H01L23/373 ,  H01L31/0312

    CPC分类号： H01L23/3732 ,  H01L2924/0002 ,  Y10T428/30

    摘要： The present invention relates to a heat dissipating substrate with a highly-oriented diamond film of a low crystal inclination and a low density grain boundaries and having a significantly high thermal conductivity. At least 90% of the surface area of the highly-oriented diamond film is covered with either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles, which represent the orientations of the crystals, between adjacent (100) or (111) crystal planes, simultaneously satisfies the following relationship: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., and .vertline..DELTA..gamma..vertline..ltoreq.5.degree.. In addition, this highly-oriented diamond film can be grown on a non-diamond substrates, and therefore the diamond film with a large surface area can be obtained. Thus, the present invention provides the heat dissipating substrate with an excellent thermal conductivity at low cost.

    摘要翻译： 本发明涉及具有低晶体倾斜度和低密度晶界的高取向金刚石膜并具有显着高导热性的散热基板。 高取向金刚石膜的至少90％的表面积被（100）或（111）晶面覆盖，并且欧拉角的差异{DELTAα，DELTAβ，DELTAγ}代表 相邻（100）或（111）晶面之间晶体的取向同时满足以下关系：| DELTA alpha |