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    Magnetic sensor element using highly-oriented diamond film and magnetic detector
    2.
    发明授权
    Magnetic sensor element using highly-oriented diamond film and magnetic detector 失效
    磁性传感元件采用高取向金刚石膜和磁性探测器

    公开(公告)号：US5424561A

    公开(公告)日：1995-06-13

    申请号：US305791

    申请日：1994-09-08

    申请人： Takeshi Tachibana ,  Kazushi Hayashi ,  Koji Kobashi ,  Bradley A. Fox ,  Jesko A. von Windheim ,  David L. Dreifus ,  Brian R. Stoner

    发明人： Takeshi Tachibana ,  Kazushi Hayashi ,  Koji Kobashi ,  Bradley A. Fox ,  Jesko A. von Windheim ,  David L. Dreifus ,  Brian R. Stoner

    IPC分类号： G01R33/07 ,  C30B25/02 ,  C30B29/04 ,  H01L43/06 ,  H01L43/10 ,  H01L27/22 ,  H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/065

    摘要： A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree.. The magnetic sensor element using highly-oriented diamond film has a high heat stability and sufficiently high level of magnetic field sensitivity to be used practically, enabling to expand the surface area and to increase the integration of the element and to measure magnetic field over a wide area and a large space.

    摘要翻译： 使用高取向金刚石膜的磁传感器元件包括磁检测部，至少一对主电流电极，用于使主电流流动并在磁检测部产生霍尔电动势，以及检测电极，用于检测所述霍尔电动势 。 所述磁检测部分由化学气相沉积生长的高取向金刚石膜形成，其中至少90％由（100）或（111）晶面构成。 在相邻的晶面之间，表示晶面取向的欧拉角{α，β，γ}的差异{DELTA alpha，DELTAβ，DELTA gamma}同时满足以下关系： DELTA alpha |

    Highly-oriented diamond film field-effect transistor
    3.
    发明授权
    Highly-oriented diamond film field-effect transistor 失效
    高取向金刚石膜场效应晶体管

    公开(公告)号：US5491348A

    公开(公告)日：1996-02-13

    申请号：US313986

    申请日：1994-09-28

    申请人： Hisasi Koyamao ,  Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

    发明人： Hisasi Koyamao ,  Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

    IPC分类号： H01L21/314 ,  H01L21/338 ,  H01L29/04 ,  H01L29/16 ,  H01L29/812

    CPC分类号： H01L29/1602 ,  H01L29/045 ,  H01L29/812

    摘要： A source electrode is formed on the first semiconducting diamond film and a drain electrode is formed on the second semiconducting diamond film. A highly resistant diamond film having a thickness of between 10 .ANG. and 1 mm and an electrical resistance of at least 10.sup.2 .OMEGA..cm or more is placed between the first and second semiconducting diamond films. A gate electrode is formed on the highly resistant diamond film. Thereby, a channel region is formed by these first and second semiconducting diamond films as well as the highly resistant diamond film. All or at least a part of said first and second semiconducting diamond films and the highly resistant diamond film are made of highly-oriented diamond films where either (100) or (111) crystal planes of diamond cover at least 80% of the film surface, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.} which represent the crystal plane orientation, satisfy .vertline..DELTA..alpha..vertline.

    摘要翻译： 在第一半导体金刚石膜上形成源电极，在第二半导体金刚石膜上形成漏电极。 在第一和第二半导体金刚石膜之间放置厚度在10埃至1毫米至10欧姆或更大的电阻之间的高度耐磨的金刚石薄膜。 在耐高压金刚石膜上形成栅电极。 因此，通过这些第一和第二半导体金刚石膜以及高度耐磨的金刚石膜形成沟道区。 所述第一和第二半导体金刚石膜的全部或至少一部分和高度耐金刚石膜由高取向金刚石膜制成，金刚石的（100）或（111）晶面覆盖至少80％的膜表面 ，并且表示晶面取向的欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}满足| DELTAα| <10°，| DELTA beta | <10°，| DELTA gamma | <10°，同时在相邻的晶面之间。

    Highly oriented diamond film field-effect transistor
    4.
    发明授权
    Highly oriented diamond film field-effect transistor 失效
    高取向金刚石膜场效应晶体管

    公开(公告)号：US5371383A

    公开(公告)日：1994-12-06

    申请号：US62052

    申请日：1993-05-14

    申请人： Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

    发明人： Koichi Miyata ,  Kimitsugu Saito ,  David L. Dreifus ,  Brian R. Stoner

    IPC分类号： C30B29/04 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/78 ,  H01L29/786 ,  H01L31/0312 ,  H01L29/04 ,  H01L29/12 ,  H01L31/036

    CPC分类号： H01L29/1602 ,  H01L29/1079 ,  H01L29/66045 ,  H01L29/78 ,  Y10T428/30

    摘要： A diamond film FET according to the present invention comprises a semiconducting diamond layer, a gate, a source, and a drain, wherein said semiconducting diamond layer comprises a semiconducting highly-oriented diamond film grown by chemical vapor deposition, and at least 80% of the surface area of said diamond film consists of either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of either (100) or (111) crystal planes, simultaneously satisfy the following relations between the adjacent crystal planes: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree. and .vertline..DELTA..gamma..vertline..ltoreq.5.degree..

    摘要翻译： 根据本发明的金刚石膜FET包括半导体金刚石层，栅极，源极和漏极，其中所述半导体金刚石层包括通过化学气相沉积生长的半导体高取向金刚石膜，并且至少80％的 所述金刚石膜的表面积由（100）或（111）晶面构成，并且欧拉角{α，β，γ}的差异{DELTAα，DELTAβ，DELTAγ}代表两者的取向 （100）或（111）晶面，同时满足相邻晶面之间的以下关系：| DELTA alpha |

    Methods for forming smooth diamond-based mesa structures
    5.
    发明授权
    Methods for forming smooth diamond-based mesa structures 失效
    形成平滑金刚石台面结构的方法

    公开(公告)号：US5672240A

    公开(公告)日：1997-09-30

    申请号：US658467

    申请日：1996-06-05

    申请人： Brian R. Stoner ,  Joseph S. Holmes, Jr. ,  David L. Dreifus ,  Scott R. Sahaida ,  Roy E. Fauber ,  Michelle L. Hartsell ,  Dean Malta

    发明人： Brian R. Stoner ,  Joseph S. Holmes, Jr. ,  David L. Dreifus ,  Scott R. Sahaida ,  Roy E. Fauber ,  Michelle L. Hartsell ,  Dean Malta

    IPC分类号： H01L21/20 ,  H03H3/08 ,  H03H9/02 ,  H01L21/00 ,  B44C1/22

    CPC分类号： H01L21/2007 ,  H03H3/08 ,  H03H9/02582

    摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.

    摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

    Smooth diamond based mesa structures
    6.
    发明授权
    Smooth diamond based mesa structures 失效
    平滑钻石的台面结构

    公开(公告)号：US5652436A

    公开(公告)日：1997-07-29

    申请号：US514656

    申请日：1995-08-14

    申请人： Brian R. Stoner ,  Joseph S. Holmes, Jr. ,  David L. Dreifus ,  Scott R. Sahaida ,  Roy E. Fauber ,  Michelle L. Hartsell ,  Dean Malta

    发明人： Brian R. Stoner ,  Joseph S. Holmes, Jr. ,  David L. Dreifus ,  Scott R. Sahaida ,  Roy E. Fauber ,  Michelle L. Hartsell ,  Dean Malta

    IPC分类号： H01L21/20 ,  H03H3/08 ,  H03H9/02 ,  H01L31/0312

    CPC分类号： H01L21/2007 ,  H03H3/08 ,  H03H9/02582

    摘要： A diamond-based structure includes a substrate, an adhesive material on a face of the substrate, and an array of spaced apart diamond mesas bonded to the substrate by the adhesive material. In particular, each of the diamond mesas can have a growth surface adjacent the substrate and an interfacial surface opposite the substrate, and the interfacial surface can be smooth relative to the growth surface. This structure can be fabricated by providing a sacrificial substrate, forming a plurality of diamond mesas on a face of the sacrificial substrate, bonding the diamond mesas to a transfer substrate, and removing the sacrificial substrate. Accordingly, the interfacial surfaces of the diamond, which are formed adjacent the sacrificial substrate and then exposed by removing the substrate are smooth.

    摘要翻译： 基于金刚石的结构包括基底，在基底的表面上的粘合剂材料以及通过粘合剂材料结合到基底上的间隔开的金刚石台面阵列。 特别地，每个金刚石台面可以具有邻近基底的生长表面和与基底相对的界面，并且界面表面相对于生长表面可以是平滑的。 可以通过提供牺牲衬底，在牺牲衬底的表面上形成多个金刚石台面，将金刚石台面结合到转移衬底以及去除牺牲衬底来制造该结构。 因此，与牺牲衬底相邻形成然后通过去除衬底而暴露的金刚石的界面表面是光滑的。

    Microelectronic diamond capacitive transducer
    7.
    发明授权
    Microelectronic diamond capacitive transducer 失效
    微电子金刚石电容式换能器

    公开(公告)号：US5453628A

    公开(公告)日：1995-09-26

    申请号：US322064

    申请日：1994-10-12

    申请人： Michelle L. Hartsell ,  Scott R. Sahaida ,  Brian R. Stoner ,  Glenn J. Tessmer

    发明人： Michelle L. Hartsell ,  Scott R. Sahaida ,  Brian R. Stoner ,  Glenn J. Tessmer

    IPC分类号： G01L9/00 ,  H01L29/84 ,  H01L29/96

    CPC分类号： G01L9/0073

    摘要： A capacitive transducer includes a first electrically conductive layer, and a diamond diaphragm mounted opposite the first electrically conductive Layer so as to be moveable relative to the first electrically conductive layer. The first electrically conductive layer defines a first plate for the transducer, while the diaphragm defines the second plate for the transducer. In one embodiment of the transducer, the diamond layer is degeneratively doped providing the second plate. The microelectronic capacitive transducer preferably also includes an insulating layer on a face of the diamond layer adjacent the electrically conductive layer defining an overpressure stop for the transducer. The transducer includes absolute or differential pressure sensing embodiments. The microelectronic capacitive transducer may also be configured as an actuator. The diamond layer may be highly oriented diamond including semiconductor devices formed therein to provide signal conditioning. A fabrication method is also disclosed.

    摘要翻译： 电容换能器包括第一导电层和与第一导电层相对安装的金刚石膜片，以便相对于第一导电层可移动。 第一导电层限定用于换能器的第一板，而隔膜限定用于换能器的第二板。 在换能器的一个实施例中，金刚石层退化掺杂，提供第二板。 微电子电容换能器优选地还包括在邻近导电层的金刚石层的面上的绝缘层，其限定用于换能器的超压停止。 换能器包括绝对或差压感测实施例。 微电子电容换能器也可以被配置为致动器。 金刚石层可以是包括其中形成的半导体器件的高取向金刚石以提供信号调节。 还公开了一种制造方法。

    Surface modification for enhanced silanation of ceramic materials
    9.
    发明授权
    Surface modification for enhanced silanation of ceramic materials 有权
    用于增强陶瓷材料硅烷化的表面改性

    公开(公告)号：US08617704B2

    公开(公告)日：2013-12-31

    申请号：US13273528

    申请日：2011-10-14

    申请人： Jeffrey Robert Piascik ,  Jeffrey Yates Thompson ,  Sonia Grego ,  Brian R. Stoner

    发明人： Jeffrey Robert Piascik ,  Jeffrey Yates Thompson ,  Sonia Grego ,  Brian R. Stoner

    IPC分类号： B32B9/04 ,  C23C16/00 ,  C23C16/40 ,  B32B15/04

    CPC分类号： A61L27/306 ,  A61K6/02 ,  A61K6/0205 ,  A61L2400/18 ,  A61L2430/12 ,  Y10T156/10 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31667 ,  A61K6/0017 ,  C08L43/04

    摘要： A coated medical implant, such as a coated dental component, is provided, the coated medical implant including a substrate surface formed of a material comprising available hydroxyl groups and a silicon oxide coating layer chemisorbed on the substrate surface. A method for the preparation of such coated implants is also provided, the method involving application of the silicon oxide coating layer to the substrate surface by chemical vapor deposition. A dental structure is also provided, which includes a first dental component having a substrate surface formed of a material comprising available hydroxyl groups; a silicon oxide coating layer chemisorbed on the substrate surface; a silane coupling agent overlying and covalently attached to the silicon oxide layer; a dental cement overlying and coupled to the silane coupling agent; and a second dental component having a surface bonded to the dental cement.

    摘要翻译： 提供涂覆的医疗植入物，例如涂覆的牙科部件，涂覆的医疗植入物包括由包含可用羟基的材料形成的基底表面和在基底表面上化学吸附的氧化硅被覆层。 还提供了用于制备这种涂覆植入物的方法，该方法包括通过化学气相沉积将氧化硅涂层施加到基底表面。 还提供牙科结构，其包括具有由包含可用羟基的材料形成的基底表面的第一牙齿部件; 化学吸附在基材表面上的氧化硅涂层; 覆盖并共价连接到氧化硅层上的硅烷偶联剂; 覆盖并与硅烷偶联剂偶联的牙科水泥; 以及具有粘合到所述牙科粘固剂的表面的第二牙齿部件。