摘要:
The present invention provides glucans and derivatives thereof which are useful as raw materials in the starch processing industries, food and drink compositions, food additive compositions, and starch substitutes for biodegradable plastics, and processes for preparing the same. Particularly, it provides glucans and derivatives thereof having excellent properties such as higher solubility in water than conventional starches, lower viscosity and the glucans are not subject to retrogradation which is observed in conventional starches, and which are capable of preventing the retrogradation of starches.
摘要:
Glucan with a degree of polymerization of 50 or more includes an inner branched cyclic structure portion and an outer branched structure portion, and methods for producing the same.
摘要:
The present invention provides glucans and derivatives thereof which are useful as raw materials in the starch processing industries, food and drink compositions, food additive compositions, and starch substitutes for biodegradable plastics, and processes for preparing the same. Particularly, it provides glucans and derivatives thereof having excellent properties such as higher solubility in water than conventional starches, lower viscosity and the glucans are not subject to retrogradation which is observed in conventional starches, and which are capable of preventing the retrogradation of starches.
摘要:
This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In fabricating such IC, it is important to electrically isolate the photodiode and the bipolar transistor. In addition it is necessary to make the surface of the substrate flat. According to this invention, the inter-device isolation between the above-described two devices is attained by forming two epitaxial layers on the silicon substrate, forming trenches in the layers, and burying silicon dioxide in the trenches. In the monolithic IC according to this invention wiring capacity is small, and high-speed performance becomes possible. A p-type buried-layer is formed below the bipolar transistor to thereby prevent punch through between the bipolar transistor and other devices. Also this invention provides the process for fabricating a planar type bipolar transistor suitable to fabricate the monolithic IC and also provides a PIN photodiode of a new structure.
摘要:
A multiple access radio telephone system is connected to a telecommunication switching system and serves a group of N remote stations through M two-way radio channels (where M is smaller than N). The remote stations have corresponding subscriber line terminals in the switching system and are accessible to one of the two-way radio channels selected by a concentrator. For efficient channel utilization, the concentrator establishes a full-duplex mode connection between one of the corresponding subscriber line terminals of the switching system and the selected two-way radio channel in response to a request for an extragroup call and establishes a half-duplex mode connection between two of the remote stations through the selected two-way radio channel in response to a request for an intragroup call.