Monolithic IC having pin photodiode and an electrically active element
accommodated on the same semi-conductor substrate
    1.
    发明授权
    Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate 失效
    具有引脚光电二极管的单片IC和容纳在同一半导体衬底上的电活性元件

    公开(公告)号:US5410175A

    公开(公告)日:1995-04-25

    申请号:US899591

    申请日:1992-06-18

    IPC分类号: H01L27/144 H01L27/14

    CPC分类号: H01L27/1443

    摘要: This invention relates to a monolithic IC having a PIN photodiode and an n-p-n bipolar transistor formed on a single semiconductor (silicon) substrate. In fabricating such IC, it is important to electrically isolate the photodiode and the bipolar transistor. In addition it is necessary to make the surface of the substrate flat. According to this invention, the inter-device isolation between the above-described two devices is attained by forming two epitaxial layers on the silicon substrate, forming trenches in the layers, and burying silicon dioxide in the trenches. In the monolithic IC according to this invention wiring capacity is small, and high-speed performance becomes possible. A p-type buried-layer is formed below the bipolar transistor to thereby prevent punch through between the bipolar transistor and other devices. Also this invention provides the process for fabricating a planar type bipolar transistor suitable to fabricate the monolithic IC and also provides a PIN photodiode of a new structure.

    摘要翻译: 本发明涉及具有PIN光电二极管和形成在单个半导体(硅))衬底上的n-p-n双极晶体管的单片IC。 在制造这种IC时,重要的是将光电二极管和双极晶体管电隔离。 此外,需要使基板的表面平坦。 根据本发明,通过在硅衬底上形成两个外延层,在层中形成沟槽,并在沟槽中埋入二氧化硅,可以实现上述两个器件之间的器件间隔离。 在根据本发明的单片IC中,布线容量小,并且可以实现高速性能。 在双极晶体管的下方形成p型掩埋层,从而防止双极晶体管和其它器件之间的穿通。 此外,本发明提供了一种用于制造适于制造单片IC的平面型双极晶体管的方法,并且还提供具有新结构的PIN光电二极管。

    FUEL CONTROL FOR DIESEL ENGINE HAVING PARTICULATE FILTER
    2.
    发明申请
    FUEL CONTROL FOR DIESEL ENGINE HAVING PARTICULATE FILTER 审中-公开
    具有颗粒过滤器的柴油发动机的燃油控制

    公开(公告)号:US20070012031A1

    公开(公告)日:2007-01-18

    申请号:US11456643

    申请日:2006-07-11

    IPC分类号: F01N3/10 F02B3/00

    摘要: There is provided a method for fueling a diesel engine having a particulate filter in its exhaust system. The method comprises supplying a main fuel injection to generate a desired torque. It also comprises additionally supplying a first post fuel injection after the main fuel injection and a second post fuel injection after the first post fuel injection during a higher engine load condition. The method further comprises continuing to supply the main fuel injection and the first post fuel injection and stopping to supply the second post fuel injection during a lower engine load condition, if a vehicle cruise control is performed. Therefore, a noticeable torque disturbance can be eliminated.

    摘要翻译: 提供了一种在其排气系统中对具有微粒过滤器的柴油发动机进行加油的方法。 该方法包括供应主燃料喷射以产生期望的扭矩。 它还包括在主燃料喷射之后另外提供第一后燃料喷射和在较高发动机负载状态之后的第一后燃料喷射之后的第二后燃料喷射。 如果进行车辆巡航控制,该方法还包括继续供应主燃料喷射和第一后燃料喷射和停止以在较低的发动机负载条件期间供应第二后燃料喷射。 因此,可以消除明显的扭矩扰动。

    Distance image sensor
    5.
    发明授权
    Distance image sensor 有权
    距离图像传感器

    公开(公告)号:US08013413B2

    公开(公告)日:2011-09-06

    申请号:US12514898

    申请日:2007-11-13

    IPC分类号: H01L27/146

    摘要: In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.

    摘要翻译: 在范围图像传感器8中,当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时,从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接,以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此,由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外,当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时,彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此,由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。

    Assigning a hall call to a full elevator car
    6.
    发明授权
    Assigning a hall call to a full elevator car 失效
    向全电梯轿厢分配门厅呼叫

    公开(公告)号:US5467844A

    公开(公告)日:1995-11-21

    申请号:US287404

    申请日:1994-07-28

    IPC分类号: B66B1/18 B66B1/20

    CPC分类号: B66B1/18

    摘要: Deeming a full elevator car available for servicing a hall call is accomplished by testing if all of the car calls for the car are between the position of the elevator car and the hall call. If not, the full car may still be deemed available if there is a special stop car call between the position of the car and the position of the hall call or if there is at least one car call between the position of the car and the position of the hall call and there are no other hall calls between the position of the car and the position of the hall call.

    摘要翻译: 取消可用于维修大厅呼叫的全电梯轿厢,通过测试汽车的所有车辆是否在电梯轿厢的位置和门厅呼叫之间进行。 如果没有,如果在汽车的位置和门厅呼叫的位置之间有一个特殊的停车呼叫,或者如果汽车的位置和位置之间至少有一个轿厢呼叫,那么全车仍然可以被认为是可用的 的门厅呼叫,在车位置和门厅呼叫的位置之间没有其他门厅呼叫。

    Fuel injection system for diesel engine
    7.
    发明授权
    Fuel injection system for diesel engine 失效
    柴油机燃油喷射系统

    公开(公告)号:US4640252A

    公开(公告)日:1987-02-03

    申请号:US694960

    申请日:1985-01-25

    摘要: The fuel injection system for a diesel engine comprises a pintle type fuel injection nozzle having a valve needle slidable back and forth in the axial direction thereof between a first position in which its front end portion is inserted in a spray hole and a second position in which its front end portion is retracted from the spray hole, fuel supply means for feeding pressurized fuel to the fuel injection nozzle, and a plunger member which is slidable in the axial direction of the valve needle and provided with a front end face opposed to the rear end face of the valve needle and a rear end face adapted to receive the pressure of the pressurized fuel fed to the fuel injection nozzle from the fuel supply means, the valve needle being adapted to be lifted by a predetermined fuel pressure to a pre-lift position where the rear end face of the valve needle abuts against the front end face of the plunger member so that further lift of the valve needle is suppressed by the fuel pressure acting on the rear end face of the plunger member, thereby changing the valve opening pressure stepwise with change in the amount of lift of the valve. The injection system is provided with pre-lift change means for changing the amount of the pre-lift of the valve needle, an operating condition detecting means for detecting the operating condition of the engine, and a control means for controlling the pre-lift change means according to the output of the operating condition detecting means.

    摘要翻译: 用于柴油发动机的燃料喷射系统包括:枢轴式燃料喷射喷嘴,其具有可在其前端部插入喷孔中的第一位置和第二位置之间沿轴向方向前后滑动的阀针, 其前端部从喷孔缩回,用于将加压燃料供给到燃料喷射喷嘴的燃料供给装置以及能够沿着阀针的轴向滑动并且设置有与后方相对的前端面的柱塞部件 阀针的端面和适于从燃料供给装置接收供给燃料喷射喷嘴的加压燃料的压力的后端面,阀针适于以预定的燃料压力提升到预升程 阀针的后端面抵靠柱塞构件的前端面的位置,使得通过燃料压力肌动蛋白抑制阀针的进一步升高 g在柱塞构件的后端面上,从而随着阀的升程量的变化逐步改变阀打开压力。 注射系统设置有用于改变阀针的预升程量的预升降机改变装置,用于检测发动机的运行状态的操作条件检测装置,以及用于控制预升降变化的控制装置 根据操作条件检测装置的输出的装置。

    Semiconductor photodetector and radiation detecting apparatus
    8.
    发明授权
    Semiconductor photodetector and radiation detecting apparatus 有权
    半导体光电检测器和放射线检测装置

    公开(公告)号:US08084836B2

    公开(公告)日:2011-12-27

    申请号:US11645800

    申请日:2006-12-27

    IPC分类号: H01L31/06

    摘要: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

    摘要翻译: 光电二极管阵列PD1包括n型半导体衬底,其一面是要检测的光的入射表面; 多个pn结型感光区域3,形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。 载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。 从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。

    DISTANCE IMAGE SENSOR
    9.
    发明申请
    DISTANCE IMAGE SENSOR 有权
    距离图像传感器

    公开(公告)号:US20100078749A1

    公开(公告)日:2010-04-01

    申请号:US12514898

    申请日:2007-11-13

    IPC分类号: H01L31/101

    摘要: In a range image sensor 8, when a first reverse bias voltage applied between a semiconductor substrate 11 and first semiconductor regions 13 is an H bias, first depleted layers A1 and A1 expanding from the p-n junctions of the first semiconductor regions 13 adjacent to each other expand and link to each other so as to cover a second depleted layer B1 expanding from the p-n junction of a second semiconductor region 14. Accordingly, carriers C generated near the rear surface 11a of the semiconductor substrate 11 are reliably captured by the first depleted layers A1. Further, when a second reverse bias voltage applied between the semiconductor substrate 11 and the second semiconductor regions 14 is an H bias, the second depleted layers adjacent to each other expand and link to each other so as to cover the first depleted layer. Accordingly, carriers generated near the rear surface of the semiconductor substrate are reliably captured by the second depleted layers.

    摘要翻译: 在范围图像传感器8中,当施加在半导体基板11和第一半导体区域13之间的第一反向偏置电压为H偏压时,从彼此相邻的第一半导体区域13的pn结扩展的第一耗尽层A1和A1 相互连接,以覆盖从第二半导体区域14的pn结扩展的第二耗尽层B1。因此,由半导体衬底11的后表面11a附近产生的载流子C可靠地被第一贫化层 A1。 此外,当施加在半导体衬底11和第二半导体区域14之间的第二反向偏置电压是H偏压时,彼此相邻的第二耗尽层彼此膨胀并且彼此连接以覆盖第一耗尽层。 因此,由半导体衬底的后表面附近产生的载流子被第二耗尽层可靠地捕获。

    Semiconductor photodetector and radiation detecting apparatus
    10.
    发明申请
    Semiconductor photodetector and radiation detecting apparatus 有权
    半导体光电检测器和放射线检测装置

    公开(公告)号:US20080149943A1

    公开(公告)日:2008-06-26

    申请号:US11645800

    申请日:2006-12-27

    IPC分类号: H01L31/06 H01L31/12

    摘要: A photodiode array PD1 comprises an n-type semiconductor substrate one face of which is an incident surface of light to be detected; a plurality of pn junction-type photosensitive regions 3 as photodiodes formed on the side of a detecting surface that is opposite to the incident surface of the semiconductor substrate; and a carrier capturing portion 12 formed between adjacent photosensitive regions 3 from among the plurality of photosensitive regions 3 on the detecting surface side of the semiconductor substrate. The carrier capturing portion 12 has one or plurality of carrier capturing regions 13 respectively including pn-junctions, arranged at intervals. Thereby can be realized a semiconductor photodetector and a radiation detecting apparatus which can favorably restrain crosstalk from occurring.

    摘要翻译: 光电二极管阵列PD1包括n型半导体衬底,其一面是要检测的光的入射表面; 多个pn结型感光区域3,形成在与半导体衬底的入射表面相对的检测表面侧上的光电二极管; 以及形成在半导体衬底的检测表面侧上的多个感光区域3中的相邻感光区域3之间的载体捕获部分12。 载体捕获部分12具有分别包括间隔布置的pn结的一个或多个载体捕获区域13。 从而可以实现能够有利地抑制串扰发生的半导体光电检测器和放射线检测装置。