公开(公告)号：US07816312B2

公开(公告)日：2010-10-19

申请号：US11371444

申请日：2006-03-09

申请人： Takuo Oowada ,  Kaoru Ikegami

发明人： Takuo Oowada ,  Kaoru Ikegami

IPC分类号： C11D7/50

CPC分类号： G03F7/426 ,  G03F7/425

摘要： The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.

摘要翻译： 本发明提供一种用于光致抗蚀剂剥离溶液的组合物，其在半导体电路器件的制造工艺中在干蚀刻之后保留了光致抗蚀剂和损伤的光致抗蚀剂层的优良剥离性能，而不侵蚀新的布线材料和层间绝缘膜材料，以及 剥离光致抗蚀剂和损伤的光致抗蚀剂层的过程。 使用含有乙炔醇化合物和有机磺酸化合物中的至少一种的光致抗蚀剂剥离溶液的组合物，以及多元醇及其衍生物中的至少一种。

公开(公告)号：US20050288199A1

公开(公告)日：2005-12-29

申请号：US11168142

申请日：2005-06-28

申请人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： C11D7/32 ,  G03F7/42

CPC分类号： G03F7/423 ,  G03F7/425

摘要： A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

摘要翻译： 提供了一种用于在干蚀刻和灰化后残留在半导体衬底上的光致抗蚀剂残留物和聚合物残渣的组合物，该组合物含有至少一种类型的氟化合物，至少一种类型的有机酸，至少一种类型的有机 胺和水，所述组合物的pH为4〜7，除水以外的成分的总含量为整个组合物的0.3〜30质量％。

公开(公告)号：US20060205623A1

公开(公告)日：2006-09-14

申请号：US11371444

申请日：2006-03-09

申请人： Takuo Oowada ,  Kaoru Ikegami

发明人： Takuo Oowada ,  Kaoru Ikegami

IPC分类号： C11D7/32

CPC分类号： G03F7/426 ,  G03F7/425

摘要： The present invention provides a composition for photoresist stripping solution which shows a superior stripping property of photoresists and damaged photoresist layers remained after dry etching in the fabrication process of semiconductor circuit devices, without attacking new wiring materials and interlayer insulating film materials, as well as a process of stripping of photoresists and damaged photoresist layers. The composition for photoresist stripping solution which contains at least one of acetylene alcohol compounds and organic sulfonic acid compounds, and at least one of polyvalent alcohols and their derivatives is used.

摘要翻译： 本发明提供一种用于光致抗蚀剂剥离溶液的组合物，其在半导体电路器件的制造工艺中在干蚀刻之后保留了光致抗蚀剂和损伤的光致抗蚀剂层的优良剥离性能，而不侵蚀新的布线材料和层间绝缘膜材料，以及 剥离光致抗蚀剂和损伤的光致抗蚀剂层的过程。 使用含有乙炔醇化合物和有机磺酸化合物中的至少一种的光致抗蚀剂剥离溶液的组合物，以及多元醇及其衍生物中的至少一种。

公开(公告)号：US07563754B2

公开(公告)日：2009-07-21

申请号：US11168142

申请日：2005-06-28

申请人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Takuo Oowada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： C11D7/50

CPC分类号： G03F7/423 ,  G03F7/425

摘要： A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.

摘要翻译： 提供了一种用于在干蚀刻和灰化后残留在半导体衬底上的光致抗蚀剂残留物和聚合物残渣的组合物，该组合物含有至少一种类型的氟化合物，至少一种类型的有机酸，至少一种类型的有机 胺和水，所述组合物的pH为4〜7，除水以外的成分的总含量为整个组合物的0.3〜30质量％。

公开(公告)号：US20050209118A1

公开(公告)日：2005-09-22

申请号：US11008019

申请日：2004-12-09

申请人： Hiroshi Kawamoto ,  Mikie Miyasato ,  Takuo Oowada ,  Norio Ishikawa

发明人： Hiroshi Kawamoto ,  Mikie Miyasato ,  Takuo Oowada ,  Norio Ishikawa

IPC分类号： H01L21/027 ,  G03F7/42 ,  H01L21/02 ,  H01L21/304 ,  C11D1/00

CPC分类号： G03F7/423 ,  H01L21/02063 ,  H01L21/02071

摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

摘要翻译： 提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线 金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种制造半导体电路元件的方法，其中在形成铝，铜，钨和任何这些金属作为主要成分的合金的任何金属的布线的步骤中，使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

公开(公告)号：US06787293B2

公开(公告)日：2004-09-07

申请号：US10395649

申请日：2003-03-21

申请人： Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Yoshiko Kasama

发明人： Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Yoshiko Kasama

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/423

摘要： A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

公开(公告)号：US07087562B2

公开(公告)日：2006-08-08

申请号：US10435165

申请日：2003-05-09

申请人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

发明人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

IPC分类号： C11D3/22

CPC分类号： H01L21/02074 ,  C11D3/2075 ,  C11D7/26 ,  C11D11/0047

摘要： A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

公开(公告)号：US06864044B2

公开(公告)日：2005-03-08

申请号：US10309797

申请日：2002-12-04

申请人： Norio Ishikawa ,  Takuo Oowada

发明人： Norio Ishikawa ,  Takuo Oowada

IPC分类号： C11D7/26 ,  G03F7/42 ,  H01L21/027 ,  H01L21/302 ,  H01L21/308 ,  C11D9/00

CPC分类号： G03F7/422

摘要： The object of the present invention is to provide, in the production of semiconductor circuit elements, a photoresist residue removing liquid composition which is excellent for removing photoresist residues after dry etching without attacking the wiring material or the interlayer insulating film etc.This is made possible by a photoresist residue removing liquid composition containing one or more members selected from the group consisting of reducing compounds and their salts and one or more members selected from the group consisting of aliphatic polycarboxylic acids and their salts.

摘要翻译： 本发明的目的是在制造半导体电路元件时，提供在干蚀刻之后除去光致抗蚀剂残留物而不侵蚀布线材料或层间绝缘膜等的光致抗蚀剂残渣除去液体组合物。这使得成为可能 通过含有一种或多种选自还原化合物及其盐以及一种或多种选自脂肪族多元羧酸及其盐的成分的成分的光致抗蚀剂残渣除去液组合物。

公开(公告)号：US07816313B2

公开(公告)日：2010-10-19

申请号：US12082173

申请日：2008-04-08

申请人： Hiroshi Kawamoto ,  Mikie Miyasato ,  Takuo Oowada ,  Norio Ishikawa

发明人： Hiroshi Kawamoto ,  Mikie Miyasato ,  Takuo Oowada ,  Norio Ishikawa

IPC分类号： H01L21/02

CPC分类号： G03F7/423 ,  H01L21/02063 ,  H01L21/02071

摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

摘要翻译： 提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线 金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法，其中在以任何这些金属为主要成分的铝，铜，钨和任何金属的任何金属的布线形成步骤中，使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。

公开(公告)号：US20080318424A1

公开(公告)日：2008-12-25

申请号：US12082173

申请日：2008-04-08

申请人： Hiroshi Kawamoto ,  Mikie Miyasato ,  Takuo Oowada ,  Norio Ishikawa

发明人： Hiroshi Kawamoto ,  Mikie Miyasato ,  Takuo Oowada ,  Norio Ishikawa

IPC分类号： H01L21/44

CPC分类号： G03F7/423 ,  H01L21/02063 ,  H01L21/02071

摘要： A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

摘要翻译： 提供了一种光致抗蚀剂残渣去除剂组合物，其在干法蚀刻之后除去由抗蚀剂灰化处理形成的光致抗蚀剂残渣，在基板表面上形成任何这些铝，铜，钨和任何这些的合金的任何金属的布线 金属作为主要成分，该组合物包含一种或两种以上的无机酸和一种或两种以上的无机氟化合物。 还提供了一种用于制造半导体电路元件的方法，其中在以任何这些金属为主要成分的铝，铜，钨和任何金属的任何金属的布线形成步骤中，使用光刻胶残渣去除剂组合物 用于去除在干蚀刻之后由抗蚀剂灰化处理形成的光致抗蚀剂残渣。