公开(公告)号：US06787293B2

公开(公告)日：2004-09-07

申请号：US10395649

申请日：2003-03-21

申请人： Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Yoshiko Kasama

发明人： Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Yoshiko Kasama

IPC分类号： G03F742

CPC分类号： H01L21/02063 ,  G03F7/423

摘要： A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

公开(公告)号：US07087562B2

公开(公告)日：2006-08-08

申请号：US10435165

申请日：2003-05-09

申请人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

发明人： Yumiko Abe ,  Takuo Oowada ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori

IPC分类号： C11D3/22

CPC分类号： H01L21/02074 ,  C11D3/2075 ,  C11D7/26 ,  C11D11/0047

摘要： A post-CMP washing liquid composition is provided which includes one type or two or more types of aliphatic polycarboxylic acids and one type or two or more types selected from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose, and which has a pH of less than 3.0. This washing liquid has excellent performance in removing micro particles and metal impurities adhering to the surface of a semiconductor substrate after CMP and does not corrode a metal wiring material.

公开(公告)号：US07138362B2

公开(公告)日：2006-11-21

申请号：US10369877

申请日：2003-02-19

申请人： Yumiko Abe ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori ,  Yoshiko Kasama

发明人： Yumiko Abe ,  Norio Ishikawa ,  Hidemitsu Aoki ,  Hiroaki Tomimori ,  Yoshiko Kasama

IPC分类号： C11D7/50

CPC分类号： C11D3/2082 ,  C11D1/004 ,  C11D1/22 ,  C11D1/24 ,  C11D1/345 ,  C11D1/72 ,  C11D3/2086 ,  C11D11/0047

摘要： There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

公开(公告)号：US06524376B2

公开(公告)日：2003-02-25

申请号：US09769545

申请日：2001-01-25

申请人： Hidemitsu Aoki ,  Tatsuya Koito ,  Kenichi Nakabeppu

发明人： Hidemitsu Aoki ,  Tatsuya Koito ,  Kenichi Nakabeppu

IPC分类号： C09K1302

CPC分类号： H01L21/31133 ,  C09G1/02 ,  C23F11/08 ,  C23F11/10 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/76814

摘要： An anticorrosive agent containing, as essential components, (a) urea or a urea derivative and (b) a hydroxy aromatic compound.

摘要翻译： 含有（a）脲或脲衍生物和（b）羟基芳族化合物作为必要组分的防腐剂。

公开(公告)号：US07312186B2

公开(公告)日：2007-12-25

申请号：US10750971

申请日：2004-01-05

申请人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

发明人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D7/08 ,  C11D9/22

CPC分类号： H01L21/02074 ,  C11D1/722 ,  C11D3/2086 ,  C11D3/2093 ,  C11D3/33 ,  C11D3/361 ,  C11D11/0047 ,  H01L21/02065

摘要： A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X   (1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X   (2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

摘要翻译： 一种用于半导体衬底的清洁溶液，其包含式（1）和/或式（2）的非离子表面活性剂，螯合剂和螯合促进剂：<？in-line-formula description =“In-Line Formulas” 结束=“铅”→CH 3 - （CH 2） ＆lt; 2m＆lt; O＆lt; n＆gt; -X（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中l，m和 n独立地表示正数，X表示氢原子或烃基; <？in-line-formula description =“In-line Formulas”end =“lead”？> CH 3 - （CH 2） > - （C b H 2b）O - （C x H 2 H 2） 其中a，b，d，x和y分别代表一个或多个，其中a，b，d，x和y 独立地表示正数，b和x不同，X表示氢原子或烃基。

公开(公告)号：US06949465B2

公开(公告)日：2005-09-27

申请号：US10614971

申请日：2003-07-09

申请人： Hidemitsu Aoki ,  Kenichi Tokioka ,  Yoshiko Kasama ,  Tatsuya Koito ,  Keiji Hirano

发明人： Hidemitsu Aoki ,  Kenichi Tokioka ,  Yoshiko Kasama ,  Tatsuya Koito ,  Keiji Hirano

IPC分类号： B08B3/08 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L21/302

CPC分类号： H01L21/76814 ,  C11D7/265 ,  C11D7/3209 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76832

摘要： According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film. Specifically, residues 126 and 128 generated after forming an interconnect trench in an SiOC film 116 are removed using a fluoride-free weak alkaline amine stripper. After the removing step, the wafer is rinsed with isopropyl alcohol and then dried without drying with pure water.

摘要翻译： 根据本发明，可以有效地除去在选择性地除去诸如SiOC的低介电常数膜之后产生的残留物，而不会在绝缘膜或金属膜上造成损坏。 具体地，使用无氟化的弱碱性胺汽提器除去在SiOC膜116中形成互连沟槽之后产生的残留物126和128。 除去步骤后，将晶片用异丙醇漂洗，然后用纯水干燥而干燥。

公开(公告)号：US06890864B2

公开(公告)日：2005-05-10

申请号：US10339658

申请日：2003-01-10

申请人： Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Hiroaki Tomimori ,  Toshiyuki Takewaki ,  Nobuo Hironaga ,  Hiroyuki Kunishima

发明人： Hidemitsu Aoki ,  Kenichi Nakabeppu ,  Hiroaki Tomimori ,  Toshiyuki Takewaki ,  Nobuo Hironaga ,  Hiroyuki Kunishima

IPC分类号： H01L21/306 ,  H01L21/311 ,  H01L21/768 ,  H01L23/532 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01L21/76844 ,  H01L21/02052 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/76838 ,  H01L23/53228 ,  H01L23/53242 ,  H01L2924/0002 ,  H01L2924/00

摘要： There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2 water and is dried.

摘要翻译： 提供了一种半导体器件制造方法，用于在半导体衬底上形成布线层，然后进行清洁，这可以防止布线层的洗脱和氧化，以及制造方法中使用的处理液。 在等离子体气氛中形成Cu布线，Cu布线上的中间膜和在Intereraer膜中的露出Cu布线的表面的开口。 将IPA喷涂到半导体器件上，然后用胺溶剂对其进行有机释放处理以除去蚀刻残留物。 再次用IPA冲洗半导体器件以除去剩余的胺，然后用碱性处理液清洗。 然后用纯水或CO 2水漂洗并干燥。

公开(公告)号：US06890391B2

公开(公告)日：2005-05-10

申请号：US10680216

申请日：2003-10-08

申请人： Hidemitsu Aoki ,  Yoshiko Kasama ,  Tatsuya Suzuki

发明人： Hidemitsu Aoki ,  Yoshiko Kasama ,  Tatsuya Suzuki

IPC分类号： H01L21/304 ,  B08B3/02 ,  B08B3/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213 ,  B08B3/04

CPC分类号： H01L21/02071 ,  B08B3/02 ,  B08B3/08 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67051 ,  Y10S134/902

摘要： The stripping agent is sprayed from the tip of the nozzle 33 onto the wafer surface, while the first supply nozzle 33 is actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual droplet 38 is pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzle 36 also scans at a same scanning speed as the first supply nozzle 33 scans. Vapor IPA is sprayed from the orifice of the second supply nozzle 36. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle 33, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

摘要翻译： 剥离剂从喷嘴33的尖端喷射到晶片表面上，同时第一供给喷嘴33被致动以从晶片的中心部分到其外部扫描。 该操作提供了这样一种情况，其中残余液滴38的界面由从喷嘴提供的汽提剂的表面张力从晶片的中心向晶片的外部部分拉回。 同时，第二供给喷嘴36也以与第一供给喷嘴33扫描相同的扫描速度进行扫描。 从第二供应喷嘴36的孔口喷射蒸气IPA。 这提供了在从第一供给喷嘴33喷射汽提剂之后立即将蒸气IPA喷射到晶片表面上，并且用IPA有效地替换晶片表面上的残余剥离剂。

公开(公告)号：US20050236362A1

公开(公告)日：2005-10-27

申请号：US11115275

申请日：2005-04-27

申请人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

发明人： Hidemitsu Aoki ,  Tatsuya Suzuki ,  Takuo Ohwada ,  Kaoru Ikegami ,  Norio Ishikawa

IPC分类号： H01L21/3065 ,  B44C1/22 ,  C09K13/00 ,  C11D7/08 ,  C11D7/10 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  G03F7/42 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304

CPC分类号： H01L21/02063 ,  C11D7/08 ,  C11D7/10 ,  C11D7/265 ,  C11D11/0047 ,  G03F7/426

摘要： A method of manufacturing a semiconductor device forms an interlayer insulating film on a nickel silicide layer formed on a substrate, and forms a through hole by performing dry etching using a resist pattern, formed on the interlayer insulating film, as a mask and then removing the resist pattern by ashing. A wafer after an ashing process is cleaned using a cleaning solution comprised of aqueous solution having a content of the fluorine-containing compound of 1.0 to 5.0 mass %, a content of chelating agent of 0.2 to 5.0 mass %, and a content of the organic acid salt of 0.1 to 3.0 mass %.

摘要翻译： 半导体器件的制造方法在形成于基板上的硅化镍层上形成层间绝缘膜，通过使用形成在层间绝缘膜上的抗蚀剂图案进行干蚀刻作为掩模，形成通孔，然后除去 通过灰化抵抗图案。 使用由含氟化合物的含量为1.0〜5.0质量％的水溶液，螯合剂的含量为0.2〜5.0质量％，含有有机物的清洗溶液清洗灰化处理后的晶片 酸盐为0.1〜3.0质量％。

公开(公告)号：US06877518B2

公开(公告)日：2005-04-12

申请号：US10309132

申请日：2002-12-04

申请人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

发明人： Kaori Watanabe ,  Hidemitsu Aoki ,  Norio Ishikawa ,  Kiyoto Mori

IPC分类号： C23F1/08 ,  C23F1/30 ,  H01L21/00 ,  H01L21/304 ,  B08B15/00

CPC分类号： H01L21/6708 ,  Y10S134/902

摘要： A chemical solution treatment apparatus for dissolving and removing ruthenium-based metal adhering to a substrate by a chemical solution, includes: a chemical solution treatment unit; a reservoir unit; and a chemical solution circulation system. The chemical solution inside treatment unit comprises a chemical solution supplying nozzle, and a recovering mechanism. The reservior unit has a structure having a clearence part to be in contact with the chemical solution so that gas components derived from the ruthenium-based metal dissolved and removed in said chemical solution treatment are volatilized outside the chemical solution during circulation of the chemical solution, and comprises an exhaust duct.

摘要翻译： 一种用于通过化学溶液溶解和去除附着在基底上的钌基金属的化学溶液处理设备，包括：化学溶液处理单元; 水库单元; 和化学溶液循环系统。 处理单元中的化学溶液包括化学溶液供应喷嘴和回收机构。 储液器单元具有与化学溶液接触的清洁部分的结构，使得在所述化学溶液处理中溶解和除去的衍生自钌基金属的气体成分在化学溶液循环期间在化学溶液的外部挥发， 并且包括排气管。