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    Method of manufacturing a semiconductor device
    2.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06479333B1

    公开(公告)日：2002-11-12

    申请号：US09532166

    申请日：2000-03-21

    申请人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

    发明人： Tamae Takano ,  Hideto Ohnuma ,  Hisashi Ohtani ,  Setsuo Nakajima ,  Shunpei Yamazaki

    IPC分类号： H01L2184

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

    摘要： A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.

    摘要翻译： 通过扩散金属元素进行晶体生长301，并且将镍元素移动到已掺杂磷的区域108和109中。 此时与镍元素的移动方向302,303一致的轴线与与晶体生长方向一致的轴线一致，制造具有作为沟道形成区域的区域的TFT。 在镍移动的区域的路径中，由于在移动方向上获得高结晶度，所以可以通过这种方式获得具有高特性的TFT。

    Method of making semiconductor device
    3.
    发明授权
    Method of making semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US06461943B1

    公开(公告)日：2002-10-08

    申请号：US09707348

    申请日：2000-11-06

    申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

    发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

    IPC分类号： H01L21322

    CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

    摘要： To provide a method of removing a catalyst element from a crystalline silicon film obtained by solid phase growth using the catalyst element promoting crystallization, phosphorus is implanted selectively to the crystalline silicon film having the catalyst element whereby a portion of the silicon film implanted with phosphorus is made amorphous, and when a thermal annealing treatment is performed and the silicon film is heated, the catalyst element is moved to an amorphous portion implanted with phosphorus having large gettering capacity by which the concentration of the catalyst element in the silicon film is lowered and a semiconductor device is fabricated by using the silicon film.

    摘要翻译： 为了提供一种使用催化剂元素促进结晶从固相生长获得的结晶硅膜中除去催化剂元素的方法，磷选择性地注入到具有催化剂元素的结晶硅膜上，从而一部分注入磷的硅膜为 并且当进行热退火处理并且硅膜被加热时，催化剂元件移动到注入具有大的吸气能力的磷的非晶部分中，硅膜中的催化剂元素的浓度降低，并且 通过使用硅膜制造半导体器件。

    Semiconductor device and method of fabricating the same
    5.
    发明授权
    Semiconductor device and method of fabricating the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06524896B1

    公开(公告)日：2003-02-25

    申请号：US09617105

    申请日：2000-07-14

    申请人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

    发明人： Shunpei Yamazaki ,  Hideto Ohnuma ,  Tamae Takano ,  Hisashi Ohtani

    IPC分类号： H01L2100

    CPC分类号： G02B27/017 ,  G02B5/30 ,  G02B2027/0138 ,  G02F1/13454 ,  H01L27/1255 ,  H01L27/1277 ,  H01L29/66757

    摘要： There are disclosed techniques for providing a simplified process sequence for fabricating a semiconductor device. The sequence starts with forming an amorphous film containing silicon. Then, an insulating film having openings is formed on the amorphous film. A catalytic element is introduced through the openings to effect crystallization. Thereafter, a window is formed in the insulating film, and P ions are implanted. This process step forms two kinds of regions simultaneously (i.e., gettering regions for gettering the catalytic element and regions that will become the lower electrode of each auxiliary capacitor later).

    摘要翻译： 公开了用于提供用于制造半导体器件的简化工艺顺序的技术。 该顺序开始于形成含硅的非晶膜。 然后，在非晶膜上形成具有开口的绝缘膜。 通过开口引入催化元素以进行结晶。 此后，在绝缘膜中形成窗口，并注入P离子。 该工艺步骤同时形成两种区域（即，用于吸收催化元素的吸气区域和稍后将成为每个辅助电容器的下电极的区域）。

    Process for manufacturing a semiconductor device
    6.
    发明授权
    Process for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07122450B2

    公开(公告)日：2006-10-17

    申请号：US10098153

    申请日：2002-03-15

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

    摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

    摘要翻译： 在绝缘表面上形成第一非晶半导体膜。 加入促进结晶的催化剂元素。 此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。 在第一结晶半导体膜上形成阻挡层和第二半导体层。 第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20， 浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 3 。 随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。

    Process for manufacturing a semiconductor device
    8.
    发明申请
    Process for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US20070032049A1

    公开(公告)日：2007-02-08

    申请号：US11580938

    申请日：2006-10-16

    申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

    发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Toru Mitsuki ,  Hideto Ohnuma ,  Tamae Takano ,  Kenji Kasahara ,  Koji Dairiki

    IPC分类号： H01L21/20

    CPC分类号： H01L29/66765 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78678

    摘要： A first amorphous semiconductor film is formed on an insulating surface. A catalyst element for promoting crystallization is added thereto. Thereafter, by a first heat treatment in an inert gas, a first crystalline semiconductor film is formed. A barrier layer and a second semiconductor layer are formed on the first crystalline semiconductor film. The second semiconductor layer contains a rare gas element at a concentration of 1×1019 to 2×1022/cm3, preferably 1×1020 to 1×1021/cm3 and oxygen at a concentration of 5×1017 to 1×1021/cm3. Subsequently, by a second treatment in an inert gas, the catalyst element remaining in the first crystalline semiconductor film is moved to the second semiconductor film.

    摘要翻译： 在绝缘表面上形成第一非晶半导体膜。 加入促进结晶的催化剂元素。 此后，通过在惰性气体中的第一次热处理，形成第一晶体半导体膜。 在第一结晶半导体膜上形成阻挡层和第二半导体层。 第二半导体层含有浓度为1×10 19至2×10 22 / cm 3的稀有气体元素，优选为1×10 20， 浓度为5×10 17至1×10 21 / cm 3的氧气和1×10 12 / cm 3 3 。 随后，通过在惰性气体中的第二次处理，残留在第一结晶半导体膜中的催化剂元素移动到第二半导体膜。