公开(公告)号：US06817925B2

公开(公告)日：2004-11-16

申请号：US10227717

申请日：2002-08-26

申请人： Tatsuji Saigo ,  Masaharu Sugiyama ,  Hideo Iwadate ,  Hiroyuki Kihara

发明人： Tatsuji Saigo ,  Masaharu Sugiyama ,  Hideo Iwadate ,  Hiroyuki Kihara

IPC分类号： B24C100

CPC分类号： B24B1/00 ,  B24B5/485

摘要： A multistage fine-hole machining device has lap stations for lapping an inner surface defining a through-hole of a workpiece. Each of the lap stations has a passing unit for passing wire through the through-hole of the workpiece, a supply unit for supplying a polishing material to the wire, and a sliding unit for effecting relative sliding movement between the workpiece and the wire while the wire is passed through the through-hole of the workpiece and is supplied with the polishing material to thereby lap the inner surface of the workpiece with the polishing material and enlarge the diameter of the through-hole. A transfer device successively transfers the workpiece to each of the lap stations to lap the inner surface of the workpiece at each of the lap stations during the lapping operation for successively enlarging the diameter of the through-hole to a preselected diameter.

摘要翻译： 多级微孔加工装置具有用于研磨限定工件的通孔的内表面的搭接台。 每个搭接站具有用于使线穿过工件的通孔的通过单元，用于向线材提供抛光材料的供应单元和用于在工件和线之间实现相对滑动的滑动单元，同时 电线通过工件的通孔，并被供给研磨材料，从而用研磨材料搭接工件的内表面，并且扩大通孔的直径。 转移装置在研磨操作期间将工件连续地传送到每个搭接站，以在每个搭接站处搭接工件的内表面，以连续地将通孔的直径扩大到预定直径。

公开(公告)号：US06280293B1

公开(公告)日：2001-08-28

申请号：US09418979

申请日：1999-10-14

申请人： Kouji Minami ,  Mari Kato ,  Masaharu Sugiyama

发明人： Kouji Minami ,  Mari Kato ,  Masaharu Sugiyama

IPC分类号： B24B4900

CPC分类号： B24B49/16 ,  B24B19/226 ,  B24B41/067 ,  G02B6/3851

摘要： An end face polishing apparatus comprises a jig plate for supporting a workpiece, a polishing member for polishing an end face of the workpiece, and a movable lever connected to the jig plate. A pressurizing section presses the lever to bring the end face of the workpiece into pressure contact with the polishing member. The pressurizing section has a first spring member for biasing the lever in a first direction, a pressurizing head for biasing the lever in a second direction opposite to the first direction, a second spring member for biasing the pressurizing head in the second direction, and a pressure sensor disposed between the pressurizing head and the lever for detecting a pressure applied by the end face of the ferrule onto the polishing member when the lever is pressed by the pressurizing section. A pressurization control section controls the pressure applied by the end face of the workpiece onto the polishing member when the lever is pressed by the pressurizing section.

摘要翻译： 端面抛光装置包括用于支撑工件的夹具板，用于抛光工件的端面的抛光构件和连接到夹具板的可动杆。 加压部按压操作杆使工件的端面与抛光部件压力接触。 所述加压部具有用于沿第一方向偏压所述杆的第一弹簧部件，用于沿与所述第一方向相反的第二方向偏压所述杠杆的加压头，用于沿所述第二方向偏压所述加压头的第二弹簧部件， 压力传感器设置在加压头和杠杆之间，用于当杠杆被加压部分按压时，检测由套圈的端面施加到抛光构件上的压力。 加压控制部，当通过加压部按压杆时，将由工件的端面施加的压力控制在研磨部件上。

公开(公告)号：US20070163995A1

公开(公告)日：2007-07-19

申请号：US11567384

申请日：2006-12-06

申请人： Masaru SUGIMOTO ,  Noriyuki Kobayashi ,  Masaharu Sugiyama

发明人： Masaru SUGIMOTO ,  Noriyuki Kobayashi ,  Masaharu Sugiyama

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/302 ,  H01L21/306

CPC分类号： H01L21/31144 ,  H01J37/32082 ,  H01J2237/3347 ,  H01L21/31116 ,  H01L21/76816

摘要： In etching an insulating film such as an SiOC film or the like, in order to suppress a diameter of a hole or a width of a groove, a pre-processing is performed before performing the etching. In the pre-processing, a processing gas containing CF4 gas and CH3F gas is converted into a plasma, and an opening size of an opening portion of a resist mask is decreased by depositing deposits at a sidewall thereof by using the plasma. Further, in etching the SiOC film, a processing gas containing CF4 gas, CH3F gas, and N2 gas is converted into a plasma by supplying a processing gas atmosphere by using a first high frequency wave for generating the plasma, wherein the electric power divided by a surface area of a substrate becomes over 1500 W/70685.8 mm2 (a surface area of a 300 mm wafer), and then the SiOC film is etched.

摘要翻译： 在蚀刻诸如SiOC膜等的绝缘膜时，为了抑制孔的直径或槽的宽度，在进行蚀刻之前进行预处理。 在预处理中，含有CF 4气体和CH 3 F气体的处理气体被转换为等离子体，并且抗蚀剂掩模的开口部分的开口尺寸 通过使用等离子体在其侧壁沉积沉积物而降低。 此外，在蚀刻SiOC膜时，将含有CF 4气体，CH 3 F气体和N 2气体的处理气体转化为 通过使用用于产生等离子体的第一高频波提供处理气体气氛的等离子体，其中被基板的表面积分割的电力超过1500W / 70685.8mm 2（表面积 的300mm晶片），然后蚀刻SiOC膜。

公开(公告)号：US06830501B2

公开(公告)日：2004-12-14

申请号：US10062752

申请日：2002-02-01

申请人： Kouji Minami ,  Hisayuki Hirayama ,  Kisaburo Yoshida ,  Masaharu Sugiyama

发明人： Kouji Minami ,  Hisayuki Hirayama ,  Kisaburo Yoshida ,  Masaharu Sugiyama

IPC分类号： B24B722

CPC分类号： G02B6/25 ,  B24B19/226 ,  B24B41/047 ,  G02B6/3863

摘要： An end face polishing device has a first revolution shaft mounted for undergoing revolving movement about a first axis, a rotational shaft mounted for undergoing rotation about a second axis eccentric from the first axis, and a second revolution shaft mounted for undergoing revolving movement about a third axis eccentric from the second axis. A polishing disc is connected to the second revolution shaft for revolving movement therewith.

摘要翻译： 端面抛光装置具有安装成围绕第一轴线进行旋转运动的第一旋转轴，安装成围绕第一轴线偏心的第二轴线旋转的旋转轴和安装成围绕第三轴线旋转运动的第二旋转轴 轴从第二轴偏心。 抛光盘连接到第二旋转轴用于与其旋转运动。

公开(公告)号：US07488689B2

公开(公告)日：2009-02-10

申请号：US11290481

申请日：2005-12-01

申请人： Shinya Morikita ,  Masaharu Sugiyama ,  Atsushi Kawabata

发明人： Shinya Morikita ,  Masaharu Sugiyama ,  Atsushi Kawabata

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32935 ,  H01L21/32136 ,  H01L21/6831

摘要： In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.

摘要翻译： 在真空处理室中，对具有至少形成为规定图案的掩模层的被处理物和作为被蚀刻的层形成在掩模层下方的Ti层进行蚀刻。 在蚀刻期间，通过使用在室内压为4Pa以下的含氟化合物的蚀刻气体的等离子体，进行第一等离子体处理来蚀刻Ti层。 随后，在完成第一等离子体处理之后，通过使用清洁气体的等离子体进行干洗的第二等离子体处理。 此时，除去包含在等离子体处理期间产生的Ti化合物的沉积物。

公开(公告)号：US20060118520A1

公开(公告)日：2006-06-08

申请号：US11290481

申请日：2005-12-01

申请人： Shinya Morikita ,  Masaharu Sugiyama ,  Atsushi Kawabata

发明人： Shinya Morikita ,  Masaharu Sugiyama ,  Atsushi Kawabata

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/306

CPC分类号： H01L21/67069 ,  C23F4/00 ,  H01J37/32935 ,  H01L21/32136 ,  H01L21/6831

摘要： In a vacuum processing chamber, an etching is performed on an object to be processed having at least a mask layer formed in a predetermined pattern and a Ti layer, as a layer to be etched, formed under the mask layer. During the etching, a first plasma processing is carried out to etch the Ti layer by using a plasma of an etching gas containing a fluorine compound at an inner pressure of the chamber of 4 Pa or less. Subsequently, a second plasma processing for dry cleaning is performed by using a plasma of a cleaning gas after the first plasma processing is completed. At this time, a deposit containing a Ti compound produced during the plasma processing is removed.

公开(公告)号：US06302773B1

公开(公告)日：2001-10-16

申请号：US09360774

申请日：1999-07-26

申请人： Mari Kato ,  Kouji Minami ,  Masaharu Sugiyama

发明人： Mari Kato ,  Kouji Minami ,  Masaharu Sugiyama

IPC分类号： B24B700

CPC分类号： B24B37/11 ,  B23Q3/15713 ,  B24B19/226 ,  B24B41/005

摘要： An end face polishing apparatus comprises a polishing board and a jig board for supporting workpieces. A polishing member is detachably arranged on the polishing board and has a polishing film for polishing end faces of the workpieces while the workpieces are supported by the jig board. A first holding device holdings unused polishing members each having a new polishing film preliminarily attached thereto. At least one second holding device holds used polishing members which have been removed from the polishing board. A polishing member exchanging device is mounted for linear movement in horizontal and vertical directions for exchanging a used polishing member arranged on the polishing board with an unused polishing member by seizing the used polishing member from the polishing board and conveying the used polishing member to the second holding device, and by taking an unused polishing member from the first holding device and placing the unused polishing member on the polishing board.

摘要翻译： 端面抛光装置包括用于支撑工件的抛光板和夹具板。 抛光构件可拆卸地布置在抛光板上，并且具有用于抛光工件的端面的抛光膜，同时工件由夹具板支撑。 第一保持装置保持预先安装有新抛光膜的未使用的抛光构件。 至少一个第二保持装置保持已经从抛光板移除的使用的抛光构件。 抛光构件交换装置安装成在水平和垂直方向上线性运动，用于通过从抛光板上抓住所使用的抛光构件将布置在抛光板上的用过的抛光构件与未使用的抛光构件进行交换，并将所使用的抛光构件传送到第二 并且通过从第一保持装置取出未使用的抛光构件并将未使用的抛光构件放置在抛光板上。

公开(公告)号：US20120128970A1

公开(公告)日：2012-05-24

申请号：US13388528

申请日：2010-07-30

申请人： Yoshitsugu Motoe ,  Koji Nakashima ,  Tomohito Ishikawa ,  Masaharu Sugiyama ,  Takanori Igarashi ,  Hiroyuki Wakiwaka ,  Akihiro Makino ,  Akihisa Inoue

发明人： Yoshitsugu Motoe ,  Koji Nakashima ,  Tomohito Ishikawa ,  Masaharu Sugiyama ,  Takanori Igarashi ,  Hiroyuki Wakiwaka ,  Akihiro Makino ,  Akihisa Inoue

IPC分类号： H01F1/01 ,  C23C4/10 ,  B32B3/00

CPC分类号： G01L3/102 ,  C22C33/003 ,  C22C45/02 ,  C23C4/06 ,  G01L3/103 ,  G01L3/105 ,  G01R33/18 ,  H01F10/131 ,  H01L41/125 ,  H01L41/20 ,  H01L41/47 ,  Y10T428/265

摘要： For providing a magnetostrictive film that can exhibit high magnetostrictive properties in the vicinity of zero magnetic field and their manufacturing methods, a magnetostrictive film thermal sprayed on an object under test includes a metallic glass film subjected to thermal processing at a temperature lower than the glass transition temperature and not lower than the Curie point, and shows a linearity between the magnetic field and the magnetostriction in at least a part of the magnetic field from −15 kA/m to +15 kA/m (both inclusive).

摘要翻译： 为了提供在零磁场附近可表现出高的磁致伸缩特性的磁致伸缩薄膜及其制造方法，热喷涂在被测物体上的磁致伸缩薄膜包括在比玻璃化转变温度低的温度下进行热处理的金属玻璃薄膜 温度并且不低于居里点，并且在从-15kA / m到+15kA / m（包括端值）的至少一部分磁场中显示出磁场和磁致伸缩之间的线性。

公开(公告)号：US5911420A

公开(公告)日：1999-06-15

申请号：US733966

申请日：1996-10-18

申请人： Shigehiro Arai ,  Masaharu Sugiyama

发明人： Shigehiro Arai ,  Masaharu Sugiyama

IPC分类号： B23B31/19 ,  B23B31/36

CPC分类号： B23B31/36 ,  B23B31/19 ,  Y10T279/13 ,  Y10T279/14

摘要： A chuck spindle apparatus comprises a chuck spindle mounted for rotation about a central rotational axis, a chuck main body integrally connected to a forward end of the chuck spindle for rotation therewith, and an indexing device. The chuck main body has a chuck portion for bringing any one of a series of fabrication centers of a workpiece into coincidence with the central rotational axis to thereby chuck the workpiece. The indexing device is disposed within the chuck main body for moving the chuck portion of the chuck main body to bring another one of the fabrication centers of the workpiece into coincidence with the central rotational axis while the workpiece is chucked by the chuck portion of the chuck main body.

摘要翻译： 卡盘主轴装置包括安装成围绕中心旋转轴线旋转的卡盘主轴，与卡盘主轴的前端一体地连接以与其一起旋转的卡盘主体和分度装置。 卡盘主体具有用于使工件的一系列制造中心中的任何一个与中心旋转轴线重合的卡盘部分，从而夹紧工件。 分度装置设置在卡盘主体内，用于移动卡盘主体的卡盘部分，以使工件的卡盘部分夹紧工件时使工件的另一个制造中心与中心旋转轴线重合 主体。

公开(公告)号：US4734127A

公开(公告)日：1988-03-29

申请号：US656998

申请日：1984-10-02

申请人： Toshiaki Iuchi ,  Kaoru Sugita ,  Eikichi Sagisaka ,  Norio Tuchihashi ,  Terumi Kanamori ,  Masaharu Sugiyama

发明人： Toshiaki Iuchi ,  Kaoru Sugita ,  Eikichi Sagisaka ,  Norio Tuchihashi ,  Terumi Kanamori ,  Masaharu Sugiyama

IPC分类号： C22B21/06

CPC分类号： C22B21/06

摘要： A process for refining aluminum using a segregation solidification process under a positive pressure inert gas protecting atmosphere comprising, maintaining the temperature of molten aluminum in the vessel by a plurality of electric heater sections arranged around the periphery of said vessel in vertically superposed relationship to each other, cooling a narrow peripheral portion of the inner surface of said vessel beneath the level of the molten aluminum therein by means of a peripheral cooling section arranged around the periphery of said vessel between adjacent heater sections to crystallize the molten aluminum onto said peripheral portion of the inner surface of said vessel, scraping off the refined and solidified aluminum on said peripheral portion by scraping and tamping means having a cross-sectional configuration complementary to that of the inner surface of said vessel, tamping the heaped aluminum by said scraping and tamping means, and deenergizing some of said heater sections located at positions around the solidified heap of aluminum.

摘要翻译： 一种在正压惰性气体保护气氛下使用偏析凝固法精炼铝的方法，包括：通过以彼此垂直重叠的关系布置在所述容器的周围的多个电加热器部分来保持容器内的熔融铝的温度 通过围绕相邻加热器部分之间的所述容器的周边布置的周边冷却部分将所述容器的内表面的窄边缘部分冷却在其内的熔融铝的水平面上，以将熔融铝结晶到所述熔融铝的周边部分上 所述容器的内表面通过刮削和捣实装置刮除所述周边部分上的精炼和固化的铝，该装置具有与所述容器的内表面互补的横截面构造，通过所述刮削和捣实装置捣固堆积的铝， 并断开所述加热器部分中的一些 s位于固化铝堆周围的位置。