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    Method of manufacturing organic film transistor
    6.
    发明授权
    Method of manufacturing organic film transistor 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US08003435B2

    公开(公告)日：2011-08-23

    申请号：US11721523

    申请日：2005-12-13

    申请人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    发明人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0068 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

    摘要： A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

    摘要翻译： 一种制造有机薄膜晶体管的方法，其通过简单的涂覆工艺可以在诸如聚合物载体的柔性基底上连续地形成有机TFT，从而可以显着降低制造成本，并且有机物 在通过在载体上依次形成栅电极，栅极绝缘层，有机半导体层，源电极和漏电极来制造有机薄膜晶体管的方法中，有机物 半导体层包含在差示扫描热分析中具有放热点和吸热点的有机半导体材料，并且将如此形成的有机半导体层在不低于放热点且小于吸热点的温度下进行热处理。

    METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR
    7.
    发明申请
    METHOD OF MANUFACTURING ORGANIC FILM TRANSISTOR 有权
    制造有机薄膜晶体管的方法

    公开(公告)号：US20100178727A1

    公开(公告)日：2010-07-15

    申请号：US11721523

    申请日：2005-12-13

    申请人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    发明人： Katsura Hirai ,  Atsuko Matsuda ,  Tatsuo Tanaka ,  Chiyoko Takemura ,  Rie Katakura ,  Reiko Obuchi

    IPC分类号： H01L51/10

    CPC分类号： H01L51/0068 ,  H01L51/0002 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0541 ,  H01L51/0545

    摘要： A method of fabricating an organic thin film transistor exhibiting excellent semiconductor performance by which an organic TFT can be formed continuously on a flexible base such as a polymer support through a simple coating process, and thus the fabrication cost can be reduced sharply, and an organic semiconductor layer thus formed has a high carrier mobility, In the method of fabricating an organic thin film transistor by forming a gate electrode, a gate insulation layer, an organic semiconductor layer, a source electrode and a drain electrode sequentially on a support, the organic semiconductor layer contains an organic semiconductor material having an exothermic point and an endothermic point in a differential scanning thermal analysis, and the organic semiconductor layer thus formed is heat-treated at a temperature not less than the exothermic point and less than the endothermic point.

    摘要翻译： 一种制造有机薄膜晶体管的方法，其通过简单的涂覆工艺可以在诸如聚合物载体的柔性基底上连续地形成有机TFT，从而可以显着降低制造成本，并且有机物 在通过在载体上依次形成栅电极，栅极绝缘层，有机半导体层，源电极和漏电极来制造有机薄膜晶体管的方法中，有机物 半导体层包含在差示扫描热分析中具有放热点和吸热点的有机半导体材料，并且将如此形成的有机半导体层在不低于放热点且小于吸热点的温度下进行热处理。

    Organic thin film transistor material, organic thin film transistor, field-effect transistor, switching element, organic semiconductor material and organic semiconductor film
    10.
    发明授权
    Organic thin film transistor material, organic thin film transistor, field-effect transistor, switching element, organic semiconductor material and organic semiconductor film 有权
    有机薄膜晶体管材料，有机薄膜晶体管，场效应晶体管，开关元件，有机半导体材料和有机半导体薄膜

    公开(公告)号：US07800103B2

    公开(公告)日：2010-09-21

    申请号：US11720367

    申请日：2005-11-17

    申请人： Rie Katakura ,  Hiroshi Kita ,  Katsura Hirai ,  Tatsuo Tanaka

    发明人： Rie Katakura ,  Hiroshi Kita ,  Katsura Hirai ,  Tatsuo Tanaka

    IPC分类号： H01L51/30

    CPC分类号： H01L51/0072 ,  H01L27/283 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0068 ,  H01L51/008 ,  H01L51/0094 ,  H01L51/0541 ,  H01L51/0545

    摘要： An objective is to provide an organic thin film transistor material exhibiting an excellent property as a transistor together with reduced aging degradation, and also to provide an organic thin film transistor, a field-effect transistor, a switching element, an organic semiconductor material and an organic semiconductor film employing the organic thin film transistor material. Disclosed is an organic thin film transistor material possessing a compound represented by the following Formula (1). where A composed of a condensed ring formed with a 6 membered aromatic cycle or a 6 membered aromatic heterocycle represents C—R, N or P; at least one of As is N or P; R represents a hydrogen atom, a halogen atom or a substituent; and R may be bonded with other Rs with each other to form a ring.

    摘要翻译： 本发明的目的是提供作为晶体管具有优异性能的有机薄膜晶体管材料，同时降低老化劣化，并且还提供有机薄膜晶体管，场效应晶体管，开关元件，有机半导体材料和 使用有机薄膜晶体管材料的有机半导体膜。 公开了具有由下式（1）表示的化合物的有机薄膜晶体管材料。 其中由6元芳族环或6元芳族杂环形成的稠环构成A表示C-R，N或P; As中的至少一个是N或P; R表示氢原子，卤素原子或取代基; 并且R可以与其他的R 5相互键合形成环。