公开(公告)号：US20130026374A1

公开(公告)日：2013-01-31

申请号：US13552074

申请日：2012-07-18

申请人： Tatsuya Saito ,  Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

发明人： Tatsuya Saito ,  Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

IPC分类号： G01T1/202

CPC分类号： G01T1/202 ,  G01T1/2008 ,  G21K4/00 ,  G21K2004/04 ,  G21K2004/06

摘要： Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.

摘要翻译： 提供一种辐射检测器，包括：包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层，其中：所述闪烁体晶体包括两个晶相，所述晶体相是包括包含多个 柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1，第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间，折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。

公开(公告)号：US09360566B2

公开(公告)日：2016-06-07

申请号：US13552074

申请日：2012-07-18

申请人： Tatsuya Saito ,  Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

发明人： Tatsuya Saito ,  Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

IPC分类号： G01T1/20 ,  G01T1/202 ,  G21K4/00

CPC分类号： G01T1/202 ,  G01T1/2008 ,  G21K4/00 ,  G21K2004/04 ,  G21K2004/06

摘要： Provided is a radiation detector, including: a two-dimensional light receiving element including a plurality of pixels; and a scintillator layer having multiple scintillator crystals two-dimensionally arranged on a light receiving surface of the two-dimensional light receiving element, in which: the scintillator crystal includes two crystal phases, which are a first crystal phase including a material including a plurality of columnar crystals extending in a direction perpendicular to the light receiving surface of the two-dimensional light receiving element and having a refractive index n1, and a second crystal phase including a material existing between the plurality of columnar crystals and having a refractive index n2; and a material having a refractive index n3 is placed between adjacent scintillator crystals, the refractive index n3 satisfying a relationship of one of n1≦n3≦n2 and n2≦n3≦n1.

摘要翻译： 提供一种辐射检测器，包括：包括多个像素的二维光接收元件; 以及具有二维配置在二维光接收元件的受光面上的多个闪烁器晶体的闪烁器层，其中：所述闪烁体晶体包括两个晶相，所述晶体相是包括包含多个 柱状晶体在垂直于二维光接收元件的光接收表面的方向上延伸并具有折射率n1，第二晶相包括存在于多个柱状晶体之间并具有折射率n2的材料; 折射率n3的材料被放置在相邻的闪烁体晶体之间，折射率n3满足n1和n1E之间的关系; n3和n1E; n2和n2和n1E之间的关系; n3和n1E; n1。

公开(公告)号：US20130022169A1

公开(公告)日：2013-01-24

申请号：US13544096

申请日：2012-07-09

申请人： Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

发明人： Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

IPC分类号： G01T1/20 ,  G01N23/04 ,  B82Y15/00

CPC分类号： G01T1/202

摘要： Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.

摘要翻译： 本发明提供一种放射线检测装置，其特征在于，包括：闪光体，其在对其照射时发光; 以及具有用于接收二维布置的发射光的光接收元件的光传感器阵列，其中：闪烁体具有用于在光传播方向上传播闪烁体内的光的相分离结构，形成相分离结构 通过在第二材料中嵌入由第一材料形成的多个柱状部分; 辐射从不与光传播方向平行的方向照射到闪烁体; 并且在闪烁体内发射的光在光传播方向上传播通过闪烁体，并被放置成面对闪烁体的端面的光电传感器阵列接收。

公开(公告)号：US09134437B2

公开(公告)日：2015-09-15

申请号：US13544096

申请日：2012-07-09

申请人： Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

发明人： Tatsuya Iwasaki ,  Nobuhiro Yasui ,  Toru Den

IPC分类号： G01N23/04 ,  G01T1/202

CPC分类号： G01T1/202

摘要： Provided is a radiation detecting device, including: a scintillator which emits light when radiation is irradiated thereto; and a photosensor array having light receiving elements for receiving the emitted light which are two-dimensionally arranged, in which: the scintillator has a phase separation structure for propagating the light emitted inside the scintillator in a light propagating direction, the phase separation structure being formed by embedding multiple columnar portions formed of a first material in a second material; the radiation is irradiated to the scintillator from a direction which is not in parallel to the light propagating direction; and the light emitted inside the scintillator is propagated through the scintillator in the light propagating direction and is received by the photosensor array which is placed so as to face an end face of the scintillator.

摘要翻译： 本发明提供一种放射线检测装置，其特征在于，包括：闪光体，其在对其照射时发光; 以及具有用于接收二维布置的发射光的光接收元件的光传感器阵列，其中：闪烁体具有用于在光传播方向上传播闪烁体内的光的相分离结构，形成相分离结构 通过在第二材料中嵌入由第一材料形成的多个柱状部分; 辐射从不与光传播方向平行的方向照射到闪烁体; 并且在闪烁体内发射的光在光传播方向上传播通过闪烁体，并被放置成面对闪烁体的端面的光电传感器阵列接收。

公开(公告)号：US07888684B2

公开(公告)日：2011-02-15

申请号：US12162924

申请日：2007-03-15

申请人： Tomoyuki Oike ,  Tatsuya Iwasaki ,  Toru Den

发明人： Tomoyuki Oike ,  Tatsuya Iwasaki ,  Toru Den

IPC分类号： H01L31/0256 ,  H01L33/00

CPC分类号： H01L33/285 ,  H01L33/0087 ,  H01L33/26

摘要： There has not been a DC drive type light emitting device capable of providing high brightness. The present invention provides a light emitting device, including: a pair of electrodes; a light emitter placed between the electrodes; and a semiconductor laminated to be adjacent to the light emitter, in which the semiconductor contains one of a chalcopyrite and an oxychalcogenide.

摘要翻译： 还没有能够提供高亮度的DC驱动型发光装置。 本发明提供一种发光器件，包括：一对电极; 位于电极之间的发光体; 以及与发光体相邻的半导体层叠体，其中半导体含有黄铜矿和氧化硫化物之一。

公开(公告)号：US07768031B2

公开(公告)日：2010-08-03

申请号：US11677251

申请日：2007-02-21

申请人： Naho Itagaki ,  Tomoyuki Oike ,  Tatsuya Iwasaki ,  Toru Den

发明人： Naho Itagaki ,  Tomoyuki Oike ,  Tatsuya Iwasaki ,  Toru Den

IPC分类号： H01L33/26 ,  H05B33/14

CPC分类号： H05B33/14 ,  C09K11/642 ,  C09K11/883

摘要： To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer laminated on the substrate, in which the second layer is formed of a first portion containing Zn and at least one element chosen from S and Se as its constituent elements; and a second portion containing at least one element chosen from Cu and Ag and at least one element chosen from S and Se as its constituent elements; the first layer is made of a light emitting layer formed of at least one element chosen from S and Se and of Zn; and, in the second layer, the second portion has a cross section parallel to the substrate which tapers toward the first layer.

摘要翻译： 为了提供发光效率优异的直流驱动型无机发光装置，提供了一种发光装置，包括：基板; 以及层叠在所述基板上的第一层和第二层，其中所述第二层由包含Zn的第一部分和选自S和Se的至少一种元素作为其构成元素形成; 和含有选自Cu和Ag中的至少一种元素的第二部分和选自S和Se的至少一种元素作为其组成元素; 第一层由由至少一种选自S和Se的元素和Zn形成的发光层制成; 并且在第二层中，第二部分具有平行于基板的横截面朝向第一层逐渐变细的横截面。

公开(公告)号：US07956346B2

公开(公告)日：2011-06-07

申请号：US11371909

申请日：2006-03-10

申请人： Tatsuya Iwasaki ,  Toru Den

发明人： Tatsuya Iwasaki ,  Toru Den

IPC分类号： H01L29/06

CPC分类号： H01L33/16 ,  H01L33/18 ,  H01L51/5092 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light emitting device includes a substrate, a first electrode layer, a light emitting layer, a structure layer and a second electrode layer. The structure layer has first domains composed of a first material having a columnar shape and second domains composed of a second material, and on the substrate the structure layer and the light emitting layer are laminated between the first electrode layer and the second electrode layer.

摘要翻译： 发光器件包括衬底，第一电极层，发光层，结构层和第二电极层。 结构层具有由具有柱状的第一材料和由第二材料构成的第二区域构成的第一区域，并且在该基板上，在第一电极层和第二电极层之间层叠结构层和发光层。

公开(公告)号：US20090269880A1

公开(公告)日：2009-10-29

申请号：US12447199

申请日：2007-11-09

申请人： Naho Itagaki ,  Tatsuya Iwasaki ,  Toru Den

发明人： Naho Itagaki ,  Tatsuya Iwasaki ,  Toru Den

IPC分类号： H01L21/34

CPC分类号： H01L29/7869

摘要： A method for manufacturing a thin film transistor containing an channel layer 11 having indium oxide, including forming an indium oxide film as an channel layer and subjecting the formed indium oxide film to an annealing in an oxidizing atmosphere.

摘要翻译： 一种制造薄膜晶体管的方法，该薄膜晶体管含有具有氧化铟的沟道层11，包括形成氧化铟膜作为沟道层，并使所形成的氧化铟膜在氧化气氛中进行退火。

公开(公告)号：US20100109002A1

公开(公告)日：2010-05-06

申请号：US12532185

申请日：2008-04-23

申请人： Naho Itagaki ,  Tatsuya Iwasaki ,  Masatoshi Watanabe ,  Toru Den

发明人： Naho Itagaki ,  Tatsuya Iwasaki ,  Masatoshi Watanabe ,  Toru Den

IPC分类号： H01L29/12

CPC分类号： H01L29/7869 ,  H01L29/247

摘要： Provided is an oxynitride semiconductor comprising a metal oxynitride. The metal oxynitride contains Zn and at least one element selected from the group consisting of In, Ga, Sn, Mg, Si, Ge, Y, Ti, Mo, W, and Al. The metal oxynitride has an atomic composition ratio of N, N/(N+O), of 7 atomic percent or more to 80 atomic percent or less.

摘要翻译： 提供了包含金属氮氧化物的氧氮化物半导体。 金属氮氧化物含有Zn和选自In，Ga，Sn，Mg，Si，Ge，Y，Ti，Mo，W和Al中的至少一种元素。 金属氮氧化物的原子组成比为N，N /（N + O），为7原子％以上且在80原子％以下。

公开(公告)号：US20090189153A1

公开(公告)日：2009-07-30

申请号：US12064302

申请日：2006-09-05

申请人： Tatsuya Iwasaki ,  Toru Den ,  Naho Itagaki

发明人： Tatsuya Iwasaki ,  Toru Den ,  Naho Itagaki

IPC分类号： H01L29/12

CPC分类号： H01L29/26 ,  H01L29/78 ,  H01L29/7869

摘要： Disclosed herein is a field-effect transistor comprising a channel comprised of an oxide semiconductor material including In and Zn. The atomic compositional ratio expressed by In/(In+Zn) is not less than 35 atomic % and not more than 55 atomic %. Ga is not included in the oxide semiconductor material or the atomic compositional ratio expressed by Ga/(In+Zn+Ga) is set to be 30 atomic % or lower when Ga is included therein. The transistor has improved S-value and field-effect mobility.

摘要翻译： 本文公开了一种场效应晶体管，其包括由包括In和Zn的氧化物半导体材料构成的沟道。 In /（In + Zn）表示的原子组成比为35原子％以上55原子％以下。 Ga不包括在氧化物半导体材料中，或者当Ga包含Ga时，由Ga /（In + Zn + Ga）表示的原子组成比设定为30原子％以下。 晶体管具有改善的S值和场效应迁移率。