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    Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
    2.
    发明授权
    Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus 有权
    薄膜器件转移方法，薄膜器件，薄膜集成电路器件，有源矩阵板，液晶显示器和电子设备

    公开(公告)号：US06878607B2

    公开(公告)日：2005-04-12

    申请号：US10260791

    申请日：2002-10-02

    申请人： Satoshi Inoue ,  Tatsuya Shimoda ,  Wakao Miyazawa

    发明人： Satoshi Inoue ,  Tatsuya Shimoda ,  Wakao Miyazawa

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/30

    CPC分类号： H01L27/1266 ,  B23K26/40 ,  B23K26/57 ,  B23K2103/172 ,  G02F1/13454 ,  G02F1/1362 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76289 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68368

    摘要： A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices (140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the thin film device (140) can be transferred to the secondary destination-of-transfer part (200) while maintaining layering relationship with respect to the substrate (100).

    摘要翻译： 一种薄膜器件制造方法，其中形成在衬底上的薄膜器件被转移到第一转移部件，然后将薄膜器件转移到次级转移部件。 由诸如非晶硅的材料制成的第一分离层（120）设置在允许激光通过的基板（100）上。 在基板（100）上形成诸如TFT的薄膜器件（140）。 此外，在薄膜器件（140）上形成诸如热熔粘合剂层的第二分离层（160），并且其上安装有主要转移部件（180）。 通过照射光使第一分离层的结合强度减弱，并除去基板（100）。 因此，薄膜器件（140）被传送到主要转移部件。 然后，经由粘合剂层（190）将次要转移部件（200）附着到薄膜器件（140）的暴露部分的底部。 此后，第二分离层的结合强度通过热熔融的方式被削弱，并且去除了主要转移部分。 以这种方式，薄膜器件（140）可以在保持与衬底（100）的分层关系的同时被转移到次级转移部件（200）。

    Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus
    4.
    发明授权
    Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus 有权
    薄膜器件转移方法，薄膜器件，薄膜集成电路器件，有源矩阵板，液晶显示器和电子设备

    公开(公告)号：US06521511B1

    公开(公告)日：2003-02-18

    申请号：US09242923

    申请日：1999-02-26

    申请人： Satoshi Inoue ,  Tatsuya Shimoda ,  Wakao Miyazawa

    发明人： Satoshi Inoue ,  Tatsuya Shimoda ,  Wakao Miyazawa

    IPC分类号： H01L2130

    CPC分类号： H01L27/1266 ,  B23K26/40 ,  B23K26/57 ,  B23K2103/172 ,  G02F1/13454 ,  G02F1/1362 ,  H01L21/2007 ,  H01L21/76264 ,  H01L21/76275 ,  H01L21/76283 ,  H01L21/76289 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68368

    摘要： A thin film device fabrication method in which a thin film device formed on a substrate are transferred to a primary destination-of-transfer part and then the thin film device is transferred to a secondary destination-of-transfer part. A first separation layer (120) made of such a material as amorphous silicon is provided on a substrate (100) which allows passage of laser. A thin film device (140) such as TFTs are formed on the substrate (100). Further, a second separation layer (160) such as a hot-melt adhesive layer is formed on the thin film devices (140), and a primary destination-of-transfer part (180) is mounted thereon. The bonding strength of the first separation layer is weakened by irradiation with light, and the substrate (100) is removed. Thus, the thin film device (140) is transferred to the primary destination-of-transfer part. Then, a secondary destination-of-transfer part (200) is attached onto the bottom of an exposed part of the thin film device (140) via an adhesive layer (190). Thereafter, the bonding strength of the second separation layer is weakened by such means as thermal fusion, and the primary destination-of-transfer part is removed. In this manner, the thin film device (140) can be transferred to the secondary destination-of-transfer part (200) while maintaining layering relationship with respect to the substrate (100).

    摘要翻译： 一种薄膜器件制造方法，其中形成在衬底上的薄膜器件被转移到第一转移部件，然后将薄膜器件转移到次级转移部件。 由诸如非晶硅的材料制成的第一分离层（120）设置在允许激光通过的基板（100）上。 在基板（100）上形成诸如TFT的薄膜器件（140）。 此外，在薄膜器件（140）上形成诸如热熔粘合剂层的第二分离层（160），并且其上安装有主要转移部件（180）。 通过照射光使第一分离层的结合强度减弱，并除去基板（100）。 因此，薄膜器件（140）被传送到主要转移部件。 然后，经由粘合剂层（190）将次要转移部件（200）附着到薄膜器件（140）的暴露部分的底部。 此后，第二分离层的结合强度通过热熔融的方式被削弱，并且去除了主要转移部分。 以这种方式，薄膜器件（140）可以在保持与衬底（100）的分层关系的同时被转移到次级转移部件（200）。

    Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
    7.
    发明授权
    Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same 有权
    薄膜器件的剥离方法，转移方法，薄膜器件，薄膜集成电路器件及其制造的液晶显示器件

    公开(公告)号：US07468308B2

    公开(公告)日：2008-12-23

    申请号：US11514985

    申请日：2006-09-05

    申请人： Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

    发明人： Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

    IPC分类号： H01L21/30

    CPC分类号： H01L27/1266 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68363

    摘要： A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. The transferring method may also include providing a substrate, forming a separation layer over the substrate, forming a transferred layer over the separation layer, and partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern. The transferring method may also include joining a transfer member to the transferred layer, removing the transferred layer from the substrate and transferring the transferred layer to the transfer member, these of which constitute a transfer process, the transfer process being repeatedly performed.

    摘要翻译： 一种转印方法，包括提供衬底，在衬底上形成转印层，将转印构件接合到转印层，以及从衬底去除转印层。 转印方法还包括将转印层转印到转印部件上，并重新使用基板进行另一转印。 转移方法还可以包括提供衬底，在衬底上形成分离层，在分离层上形成转移层，并且部分地切割分离层，使得转移层的一部分转移到给定的转移构件中 模式。 转印方法还可以包括将转印部件接合到转印层，从基板移除转印层并将转印层转印到转印部件，这些转印部件构成转印工序，重复进行转印处理。

    Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
    9.
    发明申请
    Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same 有权
    薄膜器件的剥离方法，转移方法，薄膜器件，薄膜集成电路器件及其制造的液晶显示器件

    公开(公告)号：US20070010067A1

    公开(公告)日：2007-01-11

    申请号：US11514985

    申请日：2006-09-05

    申请人： Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

    发明人： Tatsuya Shimoda ,  Satoshi Inoue ,  Wakao Miyazawa

    IPC分类号： H01L21/30 ,  H01L21/00

    CPC分类号： H01L27/1266 ,  G02F1/13454 ,  G02F1/1368 ,  G02F2001/13613 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/76254 ,  H01L21/76259 ,  H01L27/1214 ,  H01L29/78603 ,  H01L2221/68359 ,  H01L2221/68363

    摘要： A transferring method including providing a substrate, forming a transferred layer over the substrate, joining a transfer member to the transferred layer, and removing the transferred layer from the substrate. The transferring method further includes transferring the transferred layer to the transfer member and reusing the substrate for another transfer. The transferring method may also include providing a substrate, forming a separation layer over the substrate, forming a transferred layer over the separation layer, and partly cleaving the separation layer such that a part of the transferred layer is transferred to a transfer member in a given pattern. The transferring method may also include joining a transfer member to the transferred layer, removing the transferred layer from the substrate and transferring the transferred layer to the transfer member, these of which constitute a transfer process, the transfer process being repeatedly performed.

    摘要翻译： 一种转印方法，包括提供衬底，在衬底上形成转印层，将转印构件接合到转印层，以及从衬底去除转印层。 转印方法还包括将转印层转印到转印部件上，并重新使用基板进行另一转印。 转移方法还可以包括提供衬底，在衬底上形成分离层，在分离层上形成转移层，并且部分地切割分离层，使得转移层的一部分转移到给定的转移构件中 模式。 转印方法还可以包括将转印部件接合到转印层，从基板移除转印层并将转印层转印到转印部件，这些转印部件构成转印工序，重复进行转印处理。