公开(公告)号：US06933201B2

公开(公告)日：2005-08-23

申请号：US10347221

申请日：2003-01-21

申请人： Tatsuya Tominari ,  Takashi Hashimoto ,  Tomoko Jinbo ,  Tsutomu Udo

发明人： Tatsuya Tominari ,  Takashi Hashimoto ,  Tomoko Jinbo ,  Tsutomu Udo

IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L29/737

CPC分类号： H01L29/66242 ,  H01L21/8249

摘要： Provided is a manufacturing method of a semiconductor device, which comprises exposing a surface of a semiconductor substrate on which a heterocrystalline layer is to be grown inside of a second emitter opening portion of a hetero-junction bipolar transistor, removing water by preheat treatment in a reducing gas atmosphere, subjecting the substrate to second heat treatment in a reducing gas atmosphere at a temperature which is higher than the preheating treatment but does not adversely affect the impurity concentration distribution of another element on the semiconductor substrate, thereby removing an oxide film formed on the surface on which the heterocrystalline layer is to be grown, and then selectively causing epitaxial growth of the heterocrystalline layer on the thus cleaned surface in the second emitter opening portion. According to the present invention, reliability of a semiconductor device having a hetero-junction bipolar transistor can be improved.

摘要翻译： 提供一种半导体器件的制造方法，其包括使异质结双极晶体管的第二发射极开口部分内部生长异质晶体层的半导体衬底的表面曝光，通过预热处理将水除去 降低气体气氛，在还原气体气氛中在比预热处理温度高的条件下对基板进行第二次热处理，但对半导体基板上的另一元件的杂质浓度分布没有不利影响，从而除去形成在 将要生长杂晶层的表面，然后选择性地引起异质晶体层在第二发射极开口部分上如此清洁的表面上的外延生长。 根据本发明，可以提高具有异质结双极晶体管的半导体器件的可靠性。

公开(公告)号：US06905934B2

公开(公告)日：2005-06-14

申请号：US10086689

申请日：2002-03-04

申请人： Takashi Hashimoto ,  Kouji Mikami ,  Tsutomu Udo ,  Masao Kondo ,  Eiji Oue

发明人： Takashi Hashimoto ,  Kouji Mikami ,  Tsutomu Udo ,  Masao Kondo ,  Eiji Oue

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/337 ,  H01L21/768 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L29/737 ,  H01L29/80

CPC分类号： H01L29/66916 ,  H01L21/8249 ,  H01L29/802

摘要： The invention provides a bipolar transistor with improved performance. An insulation film comprising a silicon oxide film is formed by means of oxidation treatment on the side surface of an emitter aperture, and then an epitaxial layer comprised of SiGe is grown selectively in an aperture formed by removing a silicon nitride film so as to form under cut.

摘要翻译： 本发明提供了具有改进性能的双极晶体管。 通过在发射器孔径的侧表面上进行氧化处理形成包含氧化硅膜的绝缘膜，然后选择性地在由除去氮化硅膜形成的孔中生长由SiGe组成的外延层，以形成下面 切。