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    2.
    发明申请
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    公开(公告)号:US20120280614A1

    公开(公告)日:2012-11-08

    申请号:US13551713

    申请日:2012-07-18

    IPC分类号: H05B33/12

    CPC分类号: H01L51/5256

    摘要: A display device including an organic electroluminescence device provided on a substrate and protected by a protective film characterized in that the protective film is composed of silicon nitride films formed in layers by a chemical vapor deposition method using an ammonia gas, a high-density silicon nitride film being provided in a surface layer of the protective film, and a low-density silicon nitride film having a lower density than that of the high-density silicon nitride film being provided below it.

    摘要翻译: 一种显示装置,包括设置在基板上并被保护膜保护的有机电致发光元件,其特征在于,所述保护膜由通过使用氨气的化学气相沉积法形成的氮化硅膜构成,高密度氮化硅 膜设置在保护膜的表面层中,并且在其下方设置密度低于高密度氮化硅膜的密度的低密度氮化硅膜。

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    3.
    发明申请
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    公开(公告)号:US20090309486A1

    公开(公告)日:2009-12-17

    申请号:US12096487

    申请日:2006-12-07

    IPC分类号: H01L51/50

    CPC分类号: H01L51/5256

    摘要: There is provided a display capable of protecting a light-emitting device by a protective film having good sealing characteristics and sidewall step coverage and preventing deterioration of the light-emitting device, thereby maintaining good display characteristics. A display device 1 including an organic electroluminescence device 3 provided on a substrate 2 and protected by a protective film 4 is characterized in that the protective film 4 is composed of silicon nitride films 4a, 4b, and 4c formed in layers by a chemical vapor deposition method using an ammonia gas, the high-density silicon nitride film 4c is provided in a surface layer of the protective film 4, and the low-density silicon nitride film 4b having a lower density than that of the high-density silicon nitride film 4c is provided below it.

    摘要翻译: 提供一种能够通过具有良好的密封特性和侧壁台阶覆盖的保护膜来保护发光装置并防止发光装置的劣化的显示器,从而保持良好的显示特性。 包括设置在基板2上并被保护膜4保护的有机电致发光器件3的显示装置1的特征在于,保护膜4由通过化学气相沉积形成的氮化硅膜4a,4b和4c构成 使用氨气的方法,在保护膜4的表面层上设置高密度氮化硅膜4c,密度低于高密度氮化硅膜4c的低密度氮化硅膜4b 在它下方提供。

    Display device with protective film having a low density silicon nitride film between high density silicon nitride films
    4.
    发明授权
    Display device with protective film having a low density silicon nitride film between high density silicon nitride films 失效
    具有在高密度氮化硅膜之间具有低密度氮化硅膜的保护膜的显示装置

    公开(公告)号:US08237361B2

    公开(公告)日:2012-08-07

    申请号:US12096487

    申请日:2006-12-07

    IPC分类号: H01L51/00

    CPC分类号: H01L51/5256

    摘要: There is provided a display capable of protecting a light-emitting device by a protective film having good sealing characteristics and sidewall step coverage and preventing deterioration of the light-emitting device, thereby maintaining good display characteristics. A display device 1 including an organic electroluminescence device 3 provided on a substrate 2 and protected by a protective film 4 is characterized in that the protective film 4 is composed of silicon nitride films 4a, 4b, and 4c formed in layers by a chemical vapor deposition method using an ammonia gas, the high-density silicon nitride film 4c is provided in a surface layer of the protective film 4, and the low-density silicon nitride film 4b having a lower density than that of the high-density silicon nitride film 4c is provided below it.

    摘要翻译: 提供一种能够通过具有良好的密封特性和侧壁台阶覆盖的保护膜来保护发光装置并防止发光装置的劣化的显示器,从而保持良好的显示特性。 包括设置在基板2上并被保护膜4保护的有机电致发光器件3的显示装置1的特征在于,保护膜4由通过化学气相沉积形成的氮化硅膜4a,4b和4c构成 使用氨气的方法,在保护膜4的表面层上设置高密度氮化硅膜4c,密度低于高密度氮化硅膜4c的低密度氮化硅膜4b 在它下方提供。