公开(公告)号：US09460946B2

公开(公告)日：2016-10-04

申请号：US13177306

申请日：2011-07-06

申请人： Hitoshi Murata ,  Tetsuya Kosugi

发明人： Hitoshi Murata ,  Tetsuya Kosugi

IPC分类号： F24F7/00 ,  H01L21/67 ,  C23C16/46

CPC分类号： H01L21/67109 ,  C23C16/46 ,  C23C16/463

摘要： A substrate processing apparatus includes a heating part including a cylindrical-shaped heat insulator and a heating wire arranged on the inner circumferential surface of the heat insulator, a heat-insulating part configured to define a cylindrical space between the heating part and the heat insulating part, a cooling gas introduction portion coupled to the cylindrical space and provided above the heat-insulating part to surround the heating part, and a cooling gas discharge portion provided at an approximately same height as that of the cooling gas introduction portion in the diameter direction extending from approximately the center of the cooling gas introduction portion.

摘要翻译： 一种基板处理装置，包括：加热部，其包括圆筒状的隔热体和配置在隔热材料的内周面上的加热丝;隔热部，被配置为在加热部和绝热部之间限定圆筒状的空间 连接到所述圆筒形空间并设置在所述绝热部分上方以围绕所述加热部的冷却气体导入部，以及设置在与所述冷却气体导入部的直径方向延伸大致相同的高度的冷却气体排出部 从大致冷却气体导入部的中心开始。

公开(公告)号：US08277560B2

公开(公告)日：2012-10-02

申请号：US10492539

申请日：2003-03-19

申请人： Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

发明人： Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45593 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02046 ,  Y02C20/30 ,  Y02P70/605

摘要： A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

摘要翻译： 一种CVD装置清洗方法，其在成膜步骤中有效地除去在反应室内附着和沉积在内壁，电极等的表面上的副产物如SiO 2或Si 3 N 4。 在清洁方法中，排出的清洁气体量非常小，可以减少诸如全球变暖的环境影响，并且可以降低成本。 将反应气体供应到反应室中并在设置在反应室中的基材的表面上形成沉积膜的CVD装置包括排气回收路径，从排气路径上的泵下游到达反应室的废气再循环 用于从反应室的内部通过泵排出气体。

公开(公告)号：US20110021038A1

公开(公告)日：2011-01-27

申请号：US12748920

申请日：2010-03-29

申请人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu SUGIURA

发明人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu SUGIURA

IPC分类号： H01L21/26 ,  H05B3/02

CPC分类号： H01L21/324 ,  H01L21/67109

摘要： Provided are a heating device, a substrate processing apparatus, and a method of manufacturing a semiconductor device, which can suppress differences between heating bodies, and simultaneously, can suppress shearing of a holder due to thermal deformation of the heating element. The heating device comprises: a heating element including a mountain part and a valley part that are alternately connected in plurality in a meander shape with both ends being fixed; holding body receiving parts respectively installed at ends of the valley parts and formed as cutout parts having a width larger than a width of the valley part; an insulating body installed at an outer circumference of the heating element; and a holding body disposed in the holding body receiving part and fixed to the insulating body.

摘要翻译： 提供一种加热装置，基板处理装置和半导体装置的制造方法，其能够抑制加热体之间的差异，同时能够抑制由于加热元件的热​​变形引起的保持器的剪切。 加热装置包括：加热元件，其包括山形部分和谷部分，其以固定的两端交替连接成多个弯曲形状; 保持体接纳部，分别安装在谷部的端部，形成为宽度大于谷部宽度的切口部; 安装在所述加热元件的外周的绝缘体; 以及保持体，其设置在所述保持体容纳部中并固定到所述绝缘体。

公开(公告)号：US09779970B2

公开(公告)日：2017-10-03

申请号：US13101625

申请日：2011-05-05

申请人： Tetsuya Kosugi ,  Hitoshi Murata ,  Shinobu Sugiura ,  Masaaki Ueno

发明人： Tetsuya Kosugi ,  Hitoshi Murata ,  Shinobu Sugiura ,  Masaaki Ueno

IPC分类号： H01L21/22 ,  H01L21/67

CPC分类号： H01L21/67109

摘要： A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

公开(公告)号：US20060201533A1

公开(公告)日：2006-09-14

申请号：US10548873

申请日：2004-03-12

申请人： Etsuo Wani ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Kenji Kameda

发明人： Etsuo Wani ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Kenji Kameda

IPC分类号： B08B6/00 ,  B08B9/00 ,  C23C16/00 ,  B05C11/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

摘要： There is provided a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is stuck and deposited onto the surface of an internal wall, an electrode or the like in a CVD chamber in a film forming process, and furthermore, executing cleaning having a small damage over an upper electrode and a counter electrode stage (a lower electrode) and manufacturing a thin film of high quality, and a CVD apparatus cleaning method using the same. In a CVD apparatus cleaning method of introducing a cleaning gas to carry out plasma cleaning over an inside of a CVD chamber after forming a deposited film on a surface of a substrate, a frequency of an RF to be applied to an RF electrode is switched into a first frequency to be applied for forming a film and a second frequency to be applied when executing the plasma cleaning.

摘要翻译： 提供了一种CVD装置，其能够有效地除去被粘附并沉积到其上的副产物如SiO 2或Si 3 N 4 N 4 在成膜工艺中在CVD室中的内壁，电极等的表面，此外，执行在上电极和对电极台（下电极）上具有小损伤的清洁并制造薄膜 的高质量的CVD装置清洗方法。 在CVD基板的表面形成沉积膜之后，在CVD装置的清洗方法中，在CVD室内引入清洗气体进行等离子体清洗，将施加到RF电极的RF的频率切换成 用于形成膜的第一频率和在执行等离子体清洗时要施加的第二频率。

公开(公告)号：US20050252451A1

公开(公告)日：2005-11-17

申请号：US10490217

申请日：2003-03-13

申请人： Tatsuro Beppu ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

发明人： Tatsuro Beppu ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y02C20/30 ,  Y02P70/605

摘要： It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined. After a film forming process for a base material is carried out by a CVD apparatus, a separated and refined fluorine gas is then converted to a plasma to remove a by-product adhered into the reaction chamber.

摘要翻译： 本发明的目的是提供一种能够有效地除去SiO 2或Si 3 N 4 N 2的副产物的CVD装置中的清洗方法。 >，其在膜形成步骤中在反应室中粘附并沉积在内壁，电极等的表面上。 此外，其目的在于提供一种清理方法，其中排出的清洁气体的量非常小，对全球变暖等环境的影响也减少，成本也降低。 向氟化合物施加能量以使氟化合物反应，从而产生氟气成分和氟气成分以外的成分。 此外，氟气成分和除了产生的氟气成分以外的成分彼此分离，使氟气成分分离精制。 在通过CVD装置进行基材的成膜处理之后，将分离精制的氟气转化为等离子体，除去附着在反应室中的副产物。

公开(公告)号：US4575934A

公开(公告)日：1986-03-18

申请号：US534241

申请日：1983-09-21

申请人： Kengo Kitamura ,  Hitoshi Murata

发明人： Kengo Kitamura ,  Hitoshi Murata

IPC分类号： B23P19/04 ,  B62D65/12 ,  B23P21/00

CPC分类号： B23P19/04 ,  B62D65/12 ,  B23P2700/50 ,  B60G2202/312 ,  B60G2206/91 ,  B60G2206/92 ,  B60G2206/931 ,  Y10T29/53383

摘要： A method and system for automatically attaching a sub-assembly such as a strut assembly of a strut-type front suspension to a main assembly such as a vehicle body which is transported on a conveyor belt. The method comprises the following steps of: (a) grasping the sub-assembly stored in a bin, carrying the sub-assembly toward the main assembly stopped on the conveyor belt by means of a mechanical hand attached to one of two industrial robots and, on the other hand, carrying an automatic fastening tool holding fastening means toward the main assembly by means of the other robot; (b) positioning the fastening tool carried to the main assembly with respect to the sub-assembly carried to the main assembly; (c) rendering the fastening tool supported by the supporting apparatus and grasped sub-assembly movable with respect to the supporting apparatus and mechanical hand according to the stopped position of the main assembly, while maintaining the positional relationship between the fastening tool and sub-assembly; (d) positioning the fastening tool and sub-assembly with respect to the main assembly; and (e) fastening the fastening means held by the fastening tool to the sub-assembly so that the sub-assembly is attached to the main assembly, while rendering the fastening tool and sub-assembly fixed to the supporting apparatus and mechanical hand, respectively.

摘要翻译： 用于将诸如支柱型前悬架的支柱组件的子组件自动地附接到诸如在传送带上传送的车体的主组件的方法和系统。 该方法包括以下步骤：（a）抓住储存在仓中的子组件，借助于连接到两个工业机器人之一上的机械手把子组件运送到主体上，该组件停在传送带上， 另一方面，通过另一机器人携带自动紧固工具将固定紧固装置朝向主组件; （b）将承载的紧固工具相对于承载到主组件的子组件定位到主组件; （c）使得由支撑装置支撑的紧固工具和被抓握的子组件相对于支撑装置和机械手可根据主组件的停止位置移动，同时保持紧固工具和子组件之间的位置关系 ; （d）相对于主组件定位紧固工具和子组件; 和（e）将由紧固工具保持的紧固装置紧固到子组件，使得子组件分别附接到主组件，同时使紧固工具和子组件分别固定到支撑装置和机械手 。

公开(公告)号：US08535444B2

公开(公告)日：2013-09-17

申请号：US12367751

申请日：2009-02-09

申请人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura

发明人： Hitoshi Murata ,  Tetsuya Kosugi ,  Shinobu Sugiura

IPC分类号： C23C16/00

CPC分类号： C23C16/4583 ,  C23C16/44 ,  F27B17/0025 ,  H01L21/67109 ,  Y10T428/24479

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction vessel configured to process a substrate, and a heating device. The heating device comprises at least one sidewall insulating part surrounding the reaction vessel, a ceiling insulating part placed on the sidewall insulating part and comprising a plurality of stress relief grooves, and a heating element installed at an inner side of the sidewall insulating part.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括构造成处理基板的反应容器和加热装置。 加热装置包括围绕反应容器的至少一个侧壁绝缘部分，设置在侧壁绝缘部分上并包括多个应力释放槽的顶部绝缘部分和安装在侧壁绝缘部分的内侧的加热元件。

公开(公告)号：US20110281226A1

公开(公告)日：2011-11-17

申请号：US13101625

申请日：2011-05-05

申请人： Tetsuya KOSUGI ,  Hitoshi MURATA ,  Shinobu SUGIURA ,  Masaaki UENO

发明人： Tetsuya KOSUGI ,  Hitoshi MURATA ,  Shinobu SUGIURA ,  Masaaki UENO

IPC分类号： F16M11/00

CPC分类号： H01L21/67109

摘要： A heater supporting device for use in a semiconductor manufacturing apparatus is provided so as to improve the uniformity of a temperature property and the expected lifespan by preventing support pieces from being damaged and separated from piece holders, and preventing deterioration in adiabatic efficiency in the vicinity of a ceiling of a vertical type furnace. A heating element of a coil shape is disposed around an object. The support pieces are vertically connected in multiple. Hollows of an elliptical shape are formed between the respective support pieces. Concave insertions are formed on one of upper and lower surfaces of the respective support pieces, and convex insertions are formed on the other one of the upper and lower surfaces of the respective support pieces. The convex insertions are insert-fitted with the concave insertions. The support pieces are vertically connected in multiple by insert-fitting the concave insertions to the convex insertions.

摘要翻译： 提供一种用于半导体制造装置的加热器支撑装置，以通过防止支撑件与支架的损坏和分离来改善温度特性和预期寿命的均匀性，并且防止在附近的绝热效率的劣化 竖炉式天花板。 线圈形状的加热元件设置在物体周围。 支撑件垂直连接多个。 在各个支撑件之间形成椭圆形的空腔。 在各个支撑件的上表面和下表面中的一个上形成凹入插入件，并且在相应的支撑件的上表面和下表面中的另一个上形成凸形插入件。 凸形插入件插入配合凹入插入物。 通过将凹入插入件嵌入到凸插入件中，支撑件垂直连接成多个。

公开(公告)号：US20110021039A1

公开(公告)日：2011-01-27

申请号：US12838831

申请日：2010-07-19

申请人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu Sugiura ,  Masaaki UENO

发明人： Hitoshi MURATA ,  Tetsuya KOSUGI ,  Shinobu Sugiura ,  Masaaki UENO

IPC分类号： H01L21/26 ,  H05B3/02

CPC分类号： H01L21/67109

摘要： Provided are a heating device, a substrate processing apparatus, and a method of manufacturing a semiconductor device. The heating device comprises: a heating element including a mountain part and a valley part that are alternately connected in plurality in a meander shape with both ends being fixed; holding body receiving parts respectively installed at ends of the valley parts and formed as cutout parts having a width larger than a width of the valley part; an insulating body installed at an outer circumference of the heating element; a holding body disposed in the holding body receiving part and fixed to the insulating body; the heating element having a ring shape; the insulating body installed in a manner of surrounding the outer circumference of the heating element; and a fixation part configured to fix the heating element to an inner wall of the insulating body.

摘要翻译： 提供一种加热装置，基板处理装置以及半导体装置的制造方法。 加热装置包括：加热元件，其包括山形部分和谷部分，其以固定的两端交替连接成多个弯曲形状; 保持体接纳部，分别安装在谷部的端部，形成为宽度大于谷部宽度的切口部; 安装在所述加热元件的外周的绝缘体; 保持体，设置在所述保持体容纳部中并固定在所述绝缘体上; 所述加热元件具有环形形状; 所述绝缘体以围绕所述加热元件的外周的方式安装; 以及固定部，被配置为将所述加热元件固定到所述绝缘体的内壁。