公开(公告)号：US07507490B2

公开(公告)日：2009-03-24

申请号：US10496317

申请日：2002-11-01

申请人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

发明人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

IPC分类号： H01M2/00

CPC分类号： H01M8/0223 ,  H01M8/0206 ,  H01M8/0254 ,  H01M8/026 ,  Y02P70/56

摘要： A metallic separator in which falling off of the conductive inclusions projecting from a matrix surface is prevented, whereby the contact resistance is decreased, resulting in increasing the characteristics for generation of electrical energy. A metallic separator for a fuel cell comprises conductive inclusions in a metal structure, and the conductive inclusions project from a surface of a matrix to a height of 1 to 3 micrometers.

摘要翻译： 防止从基体表面突出的导电性夹杂物脱落的金属隔板，由此接触电阻降低，导致电能的产生的特性增加。 用于燃料电池的金属隔板包括金属结构中的导电夹杂物，并且导电夹杂物从基质表面突出到1至3微米的高度。

公开(公告)号：US20050051431A1

公开(公告)日：2005-03-10

申请号：US10496317

申请日：2002-11-01

申请人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

发明人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

IPC分类号： H01M8/02 ,  H01M4/04

CPC分类号： H01M8/0223 ,  H01M8/0206 ,  H01M8/0254 ,  H01M8/026 ,  Y02P70/56

摘要： A metallic separator in which falling off of the conductive inclusions projecting from a matrix surface is prevented, whereby the contact resistance is decreased, resulting in increasing the characteristics for generation of electrical energy. A metallic separator for a fuel cell comprises conductive inclusions in a metal structure, and the conductive inclusions project from a surface of a matrix to a height of 1 to 3 micrometers.

摘要翻译： 防止从基体表面突出的导电性夹杂物脱落的金属隔板，由此接触电阻降低，导致电能的产生的特性增加。 用于燃料电池的金属隔板包括金属结构中的导电夹杂物，并且导电夹杂物从基质表面突出到1至3微米的高度。

公开(公告)号：US20080108282A1

公开(公告)日：2008-05-08

申请号：US11966262

申请日：2007-12-28

申请人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

发明人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

IPC分类号： B24C1/00

CPC分类号： H01M8/0206 ,  H01M8/0228 ,  H01M8/0254 ,  H01M8/026 ,  Y02P70/56 ,  Y10T29/49108

摘要： A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

摘要翻译： 根据第一实施例的金属隔板通过轧制具有导电夹杂物的金属材料并且将坯料的表面除去坯料厚度的2％或更多来获得坯料而形成。 根据第二实施例的金属隔板通过按压金属板而形成，以便具有交替地包括脊和槽的横截面，并且去除脊部的一部分以使其变平。 根据第三实施方式的金属组织中具有导电夹杂物的金属隔板通过在轧制之后将含有两种或更多种具有不同粒径的研磨剂的液体喷涂到坯料上而形成。 通过将与研磨剂混合的钝化处理液喷射到分离器，形成根据第四实施例的金属组织中具有导电夹杂物的金属隔板。

公开(公告)号：US20080292937A1

公开(公告)日：2008-11-27

申请号：US11966374

申请日：2007-12-28

申请人： Teruyuki OHTANI ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

发明人： Teruyuki OHTANI ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

IPC分类号： H01M2/00

CPC分类号： H01M8/0206 ,  H01M8/0228 ,  H01M8/0254 ,  H01M8/026 ,  Y02P70/56 ,  Y10T29/49108

摘要： A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

公开(公告)号：US07325432B2

公开(公告)日：2008-02-05

申请号：US10309320

申请日：2002-12-04

申请人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

发明人： Teruyuki Ohtani ,  Makoto Tsuji ,  Masao Utsunomiya ,  Koji Kotani

IPC分类号： H01M8/02

CPC分类号： H01M8/0206 ,  H01M8/0228 ,  H01M8/0254 ,  H01M8/026 ,  Y02P70/56 ,  Y10T29/49108

摘要： A metallic separator according to a first embodiment is formed by obtaining a blank by rolling a metallic material having conductive inclusions, and removing a surface of the blank by 2% or more of the thickness of the blank. A metallic separator according to a second embodiment is formed by pressing a metallic plate so as to have a cross section including ridges and grooves alternatively, and removing parts of the ridged portions so as to make flattened surfaces. A metallic separator having conductive inclusions in its metal texture according to a third embodiment is formed by blasting a liquid containing two or more kinds of abrasives having different particle diameters to a blank after it has been rolled. A metallic separator having conductive inclusion in its metal texture according to a fourth embodiment is formed by blasting a passivation treatment liquid mixed with abrasives to the separator.

摘要翻译： 根据第一实施例的金属隔板通过轧制具有导电夹杂物的金属材料并且将坯料的表面除去坯料厚度的2％或更多来获得坯料而形成。 根据第二实施例的金属隔板通过按压金属板而形成，以便具有交替地包括脊和槽的横截面，并且去除脊部的一部分以使其变平。 根据第三实施方式的金属组织中具有导电夹杂物的金属隔板通过在轧制之后将含有两种或更多种具有不同粒径的研磨剂的液体喷涂到坯料上而形成。 通过将与研磨剂混合的钝化处理液喷射到分离器，形成根据第四实施例的金属组织中具有导电夹杂物的金属隔板。

公开(公告)号：US08551830B2

公开(公告)日：2013-10-08

申请号：US12110800

申请日：2008-04-28

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

公开(公告)号：US08110044B2

公开(公告)日：2012-02-07

申请号：US10548320

申请日：2004-03-05

申请人： Toshihisa Nozawa ,  Koji Kotani

发明人： Toshihisa Nozawa ,  Koji Kotani

IPC分类号： H01L21/205

CPC分类号： H01L21/67248 ,  C23C16/463 ,  H01L21/67109

摘要： A first flow passage (16), which cools a temperature controlled object by a circulating first cooling water (15), and a second flow passage (19) separate from the first flow passage are provided so as to exchange heat between a second cooling water (18) flowing through the second flow passage (19) and the first cooling water (15). There is no need to store the first cooling water (15) in a tank of a constant capacity, and the first cooling water (15) flowing through the first flow passage (16) of a chiller corresponding part is absorbed substantially in its entirety by the second cooling water (18). A response becomes quick with respect to a load fluctuation of the temperature controlled object, and waste of energy can be reduced while improving accuracy of temperature control.

摘要翻译： 设置通过循环的第一冷却水（15）冷却受温度控制的物体的第一流动通道（16）和与第一流动通道分离的第二流动通道（19），以在第二冷却水 （18）流过第二流动通道（19）和第一冷却水（15）。 不需要将第一冷却水（15）存储在恒定容量的罐中，并且流过冷却器对应部件的第一流动通道（16）中流动的第一冷却水（15）基本上全部被基本上全部吸收， 第二冷却水（18）。 相对于温度受控对象的负载波动，响应变得很快，并且可以降低能量的浪费，同时提高温度控制的精度。

公开(公告)号：US07566936B2

公开(公告)日：2009-07-28

申请号：US11606181

申请日：2006-11-30

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Shigetoshi Sugawa

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Shigetoshi Sugawa

IPC分类号： H01L29/76

CPC分类号： H01L29/045 ,  H01L21/823807 ,  H01L21/823821 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/66795 ,  H01L29/7851

摘要： A CMOS device includes a p-channel MOS transistor and an n-channel MOS transistor having a structure formed on a (100) surface of a silicon substrate and having a different crystal surface, a high-quality gate insulation film formed on such a structure by a microwave plasma process, and a gate electrode formed thereon, wherein the size and the shape of the foregoing structure is set such that the carrier mobility is balanced between the p-channel MOS transistor and the n-channel MOS transistor.

摘要翻译： CMOS器件包括具有形成在硅衬底（100）表面上并具有不同晶体表面的结构的p沟道MOS晶体管和n沟道MOS晶体管，形成在这种结构上的高质量栅极绝缘膜 通过微波等离子体处理和形成在其上的栅电极，其中上述结构的尺寸和形状被设置为使得载流子迁移率在p沟道MOS晶体管和n沟道MOS晶体管之间平衡。

公开(公告)号：US20080236489A1

公开(公告)日：2008-10-02

申请号：US10586660

申请日：2005-01-19

申请人： Koji Kotani

发明人： Koji Kotani

IPC分类号： C23C16/44

CPC分类号： H01J37/32192 ,  H01J37/32935 ,  H05H1/46

摘要： The plasma processing apparatus includes: a processing container 11 having a holding stage 13 that holds a substrate 12 to be processed; a micro-wave transmission window 17 provided on or above the processing container, opposite to the substrate to be processed placed on the holding stage; a micro-wave antenna 20 provided above the processing container correspondingly to the micro-wave transmission window for supplying a micro-wave into the processing container; and a micro-wave electric power supplying source 32 connected to the micro-wave antenna. The plasma processing apparatus further includes an electric-field measuring unit 25, 26 that measures electric field strength of the micro-wave supplied by the micro-wave antenna, and a controlling unit 32a, 50A that controls the micro-wave electric power supplying source based on the electric field strength measured by the electric-field measuring unit. This enables a stable substrate process.

摘要翻译： 等离子体处理装置包括：处理容器11，其具有保持待加工的基板12的保持台13; 设置在处理容器上或上方的微波传输窗口17，与放置在保持台上的待处理基板相对; 微波天线20，设置在处理容器的上方，与微波传输窗相对应，用于向处理容器提供微波; 以及与微波天线连接的微波电力供给源32。 等离子体处理装置还包括测量由微波天线提供的微波的电场强度的电场测量单元25,26以及控制微波电力的控制单元32a，50A 基于由电场测量单元测量的电场强度来提供源。 这使得能够进行稳定的基板工艺。

公开(公告)号：US20060017101A1

公开(公告)日：2006-01-26

申请号：US11182026

申请日：2005-07-15

申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

IPC分类号： H01L29/76

CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。