摘要:
A chemical detecting apparatus includes a substrate 10 for chemicals in gas-to-be-monitored to be adsorbed to, a substrate adsorption rate improving means 12 which enhances the adsorption of the chemical in the gas-to-be-monitored to the substrate, an infrared light source 20 which applies an infrared light to the substrate 10 with the chemical adsorbed to, and an infrared light detector 22 which detects the infrared light which has made multiple reflections in the substrate 10 and exited the substrate. Thus, chemicals present in environments can be detected at high speed and with high sensitivity.
摘要:
There is provided a high-performance semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a switch block for switching connections among a plurality of signal lines by means of a plurality of transistors formed respectively in a plurality of semiconductor layers and a plurality of logic blocks formed in each of the plurality of semiconductor layers and connected to each of the plurality of signal lines. The first switch block is a programmable switch block capable of changing the connection topology among the plurality of signal lines.
摘要:
Image data is edge-processed and then digitized. This image data is Hough-transformed to generate a parameter plane in which multiple Hough-curves are plotted in a parameter space, from which coordinates with multiple intersected Hough-curves are extracted and grouped. For each group, representative coordinates are selected to estimate slopes of linear components in the image data. In this way, the linear components can be recognized from the image data to estimate the slope, thereby making it possible to modify slopes of linear components in image data of a semiconductor wafer taken at an arbitrary angle or the like.
摘要:
A frequency standard generator includes a voltage controlled crystal oscillator (VCXO) for generating high stability output signal, a radio wave receiver to receive a radio wave which includes a high accuracy reference time signal, a time interval measuring circuit which measures a phase difference between the reference time signal and the output signal of the VCXO; a frequency control processor which determines control data based on the phase difference data to phase lock the output signal of the VCXO to the reference time signal, a frequency deviation data generator for compiling the phase difference data to obtain frequency deviation trend data of the VCXO, and a compensation data generator for generating compensation data based on the frequency deviation trend data to compensate frequency changes in said VCXO when the reference time signal is unavailable.
摘要:
A particle-like point in an image is detected to detect a defect by directly processing an image of an object to be inspected. The image is first binarized, and the binarized image is scanned along an X-axis or a Y-axis, and a particle-like point in the image is approximated by a rectangular area. Information representative of the coordinates of the center of the rectangular area and the size of the rectangular area is outputted as information of the detected particle-like point.
摘要:
There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.
摘要:
There is provided a high-performance semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a switch block for switching connections among a plurality of signal lines by means of a plurality of transistors formed respectively in a plurality of semiconductor layers and a plurality of logic blocks formed in each of the plurality of semiconductor layers and connected to each of the plurality of signal lines. The first switch block is a programmable switch block capable of changing the connection topology among the plurality of signal lines.
摘要:
There is provided a scaling operator for calculating a quotient in a first residue format obtained by dividing an input number in the first residue format by a second modulus in a residue number system for representing numbers by the first residue format of a set of residues obtained with respect to first modulus and residues obtained with respect to second modulus, having a subtracter for outputting inter-moduli values of difference which are values of difference between the residues obtained with respect to the first modulus and the residues obtained with respect to the second modulus and a quotient outputting section for outputting a set of residues of the quotient obtained with respect to the first modulus and residues of the quotient obtained with respect to the second modulus as the quotient based on the inter-moduli values of difference.
摘要:
A sum of product circuit (20) which adds up two input voltages, each of which is multiplied by the prescribed coefficients. The sum of product circuit (20) has a &ngr; MOS transistor (50), a first and a second capacitance (C1, C2), and an output terminal (86). The &ngr; MOS transistor (50) includes a drain (70), source (72), and a floating gate (74). The first and a second capacitance (C1, C2) connects each of two input voltages to the floating gate (74) by capacity coupling. The output terminal (86) outputs a voltage realized between a resister element (R0) and the &ngr; MOS transistor (50). A constant voltage is applied between the drain (70) and the source (72) through the resister element (R0).
摘要翻译:产生电路(20)的总和将两个输入电压相加,每个输入电压乘以规定的系数。 产品电路(20)的总和具有nu MOS晶体管(50),第一和第二电容(C1,C2)和输出端子(86)。 nu MOS晶体管(50)包括漏极(70),源极(72)和浮动栅极(74)。 第一和第二电容(C1,C2)通过电容耦合将两个输入电压中的每一个连接到浮置栅极(74)。 输出端子(86)输出在电阻元件(R0)和nuMOS晶体管(50)之间实现的电压。 通过电阻元件(R0)在漏极(70)和源极(72)之间施加恒定的电压。
摘要:
An image processing apparatus for detecting the inclination of an object is provided. This image processing apparatus has a read means which reads the object and outputs image data, an amount of change calculation means which calculates the sum of the amounts of change of the image data of the object in at least one direction, and an inclination calculation means which calculates the inclination of the object based on the sum calculated by the amount of change calculation means.