公开(公告)号：US20170271269A1

公开(公告)日：2017-09-21

申请号：US15615963

申请日：2017-06-07

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L23/53238 ,  H01L21/31111 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

公开(公告)号：US10008450B2

公开(公告)日：2018-06-26

申请号：US15615963

申请日：2017-06-07

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L21/311 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L23/53238 ,  H01L21/31111 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223 ,  H01L24/00 ,  H01L2224/05624

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

公开(公告)号：US10665543B2

公开(公告)日：2020-05-26

申请号：US16010642

申请日：2018-06-18

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L21/311 ,  H01L23/522 ,  H01L23/528

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

公开(公告)号：US20180308802A1

公开(公告)日：2018-10-25

申请号：US16010642

申请日：2018-06-18

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L23/532 ,  H01L23/528 ,  H01L23/522 ,  H01L21/768 ,  H01L21/311

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

公开(公告)号：US09704804B1

公开(公告)日：2017-07-11

申请号：US14974012

申请日：2015-12-18

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L21/44 ,  H01L23/532 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L21/311

CPC classification number: H01L23/53238 ,  H01L21/31111 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

公开(公告)号：US20170179033A1

公开(公告)日：2017-06-22

申请号：US14974012

申请日：2015-12-18

Applicant: Texas Instruments Incorporated

Inventor： Jeffrey A. West ,  Kezhakkedath R. Udayakumar ,  Eric H. Warninghoff ,  Alan G. Merriam ,  Rick A. Faust

IPC: H01L23/532 ,  H01L21/311 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/31111 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76852 ,  H01L21/76855 ,  H01L21/76861 ,  H01L21/76892 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53223

Abstract: An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.