公开(公告)号：US20180204917A1

公开(公告)日：2018-07-19

申请号：US15601591

申请日：2017-05-22

申请人： Texas Instruments Incorporated

发明人： Furen LIN ,  Frank BAIOCCHI ,  Haian LIN ,  Yunlong LIU ,  Lark LIU ,  Wei SONG ,  ZiQiang ZHAO

IPC分类号： H01L29/417 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66 ,  H01L27/088

CPC分类号： H01L29/41741 ,  H01L27/088 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/41775 ,  H01L29/66689 ,  H01L29/7816 ,  H01L29/7834

摘要： A power MOSFET IC device including an array of MOSFET cells formed in a semiconductor substrate. The array of MOSFET cells comprises an interior region of interior MOSFET cells and an outer edge region of peripheral MOSFET cells, each interior MOSFET cell of the interior region of the array comprising a pair of interior MOSFET devices coupled to each other at a common drain contact. In an example embodiment, each interior MOSFET device includes a source contact (SCT) trench extended into a substrate contact region of the semiconductor substrate. The SCT trench is provided with a length less than a linear portion of a polysilicon gate of the interior MOSFET device, wherein the SCT trench is aligned to the polysilicon gate having a curvilinear layout geometry.

公开(公告)号：US20190004201A1

公开(公告)日：2019-01-03

申请号：US16101867

申请日：2018-08-13

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Furen LIN ,  Frank BAIOCCHI ,  Haian LIN ,  Yunlong LIU ,  Lark LIU ,  Wei SONG ,  ZiQiang ZHAO

IPC分类号： G01V1/38 ,  G01V1/24 ,  G01V1/16 ,  G01V1/18

摘要： A method of forming an electronic device includes forming a plurality of closed loops over a semiconductor substrate. Each closed loop has a first and a second polysilicon gate structure joined at first and second ends. Each closed loop includes an inner portion and an end portion. In the inner portion the first polysilicon gate structure runs about parallel to the second polysilicon gate structure. In the outer portion the first polysilicon gate structure converges with the second polysilicon gate structure. The method further includes forming a plurality of trench contacts. Each of the trench contacts is located between a respective pair of closed loops, passes through an epitaxial layer and contacts the substrate. The length of the trench contacts is no greater than the length of the inner portions.