公开(公告)号：US20180011138A1

公开(公告)日：2018-01-11

申请号：US15713111

申请日：2017-09-22

申请人： Texas Instruments Incorporated

发明人： HOI HIN LOO ,  SOH YING SEAH

IPC分类号： G01R31/28

CPC分类号： G01R31/2851 ,  G01R31/2853 ,  G01R31/287 ,  G01R31/2894

摘要： A method of testing semiconductor devices includes contacting bond pads coupled to integrated circuitry on a first die of a plurality of interconnected die on a substrate using a probe system having probes and probe tests including parametric tests, continuity tests, and a kill die subroutine. Probe tests using the probe program are performed. Die are binned into a first bin (Bin 1 die) for being a good die for all probe tests, or a second bin (Bin 2 die) for failing at least one of continuity tests and parametric tests. The Bin 2 die are divided into a first sub-group that failed the continuity tests and a second sub-group that do not fail the continuity tests. A kill die subroutine is triggered including applying power sufficient to selectively cause damage to the second sub-group of Bin 2 die to generate a continuity failure and thus generate kill die.

公开(公告)号：US20150212143A1

公开(公告)日：2015-07-30

申请号：US14168648

申请日：2014-01-30

申请人： Texas Instruments Incorporated

发明人： HOI HIN LOO ,  SOH YING SEAH

IPC分类号： G01R31/26

CPC分类号： G01R31/2851 ,  G01R31/2853 ,  G01R31/287 ,  G01R31/2894

摘要： A method of testing semiconductor devices includes contacting bond pads coupled to integrated circuitry on a first die of a plurality of interconnected die on a substrate using a probe system having probes and probe tests including parametric tests, continuity tests, and a kill die subroutine. Probe tests using the probe program are performed. Die are binned into a first bin (Bin 1 die) for being a good die for all probe tests, or a second bin (Bin 2 die) for failing at least one of continuity tests and parametric tests. The Bin 2 die are divided into a first sub-group that failed the continuity tests and a second sub-group that do not fail the continuity tests. A kill die subroutine is triggered including applying power sufficient to selectively cause damage to the second sub-group of Bin 2 die to generate a continuity failure and thus generate kill die.

摘要翻译： 测试半导体器件的方法包括使用具有探针和探针测试的探针系统将包括耦合到集成电路的接合焊盘接合在基板上的多个互连裸片的第一裸片上，所述探针和探针测试包括参数测试，连续性测试和杀死裸片子程序。 执行使用探头程序的探头测试。 模具被分为第一个仓（Bin 1 die），用于所有探针测试的良好模具，或者用于连续性测试和参数测试中至少一个失败的第二个仓（Bin 2 die）。 Bin 2模具分为第一个不连续性测试失败的子组和不连续性测试失败的第二个子组。 触发杀死芯片子程序，包括施加足以选择性地对Bin 2芯片的第二子组造成损害的电力，以产生连续性故障，从而产生杀死芯片。